VS-HFA240NJ40CPbF
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Revision: 11-Jan-17 1Document Number: 94063
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HEXFRED®
Ultrafast Soft Recovery Diode, 240 A
FEATURES
• Very low Qrr and trr
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION / APPLICATIONS
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRIMARY CHARACTERISTICS
IF(AV) 240 A
VR400 V
IF(DC) at TC197 A at 100 °C
Package TO-244
Circuit configuration Two diodes common cathode
Base common
cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage VR400 V
Continuous forward current IF
TC = 25 °C 395
ATC = 100 °C 197
Single pulse forward current IFSM Limited by junction temperature 900
Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ1.4 mJ
Maximum power dissipation PD
TC = 25 °C 658 W
TC = 100 °C 263
Operating junction and storage
temperature range TJ, TStg -55 to +150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 μA 400 - -
V
Maximum forward voltage VFM
IF = 120 A
See fig. 1
- 1.1 1.47
IF = 240 A - 1.3 1.5
IF = 120 A, TJ = 125 °C - 1.0 1.2
Maximum reverse
leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 - 660 5000 μA
Junction capacitance CTVR = 200 V See fig. 3 - 280 380 pF
Series inductance LSFrom top of terminal hole to mounting plane - 6.0 - nH
VS-HFA240NJ40CPbF
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-17 2Document Number: 94063
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Note
(1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf in steps until desired or maximum torque limits are reached
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5 trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 50 -
nsTJ = 25 °C
IF = 140 A
dIF/dt = 200 A/μs
VR = 200 V
- 77 120
TJ = 125 °C - 290 440
Peak recovery current
See fig. 6 IRRM
TJ = 25 °C - 7.5 14 A
TJ = 125 °C - 16 30
Reverse recovery charge
See fig. 7 Qrr
TJ = 25 °C - 290 780 nC
TJ = 125 °C - 2300 6300
Peak rate of recovery current
See fig. 8 dI(rec)M/dt TJ = 25 °C - 320 - A/μs
TJ = 125 °C - 270 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range TJ, TStg - 55 - 150 °C
Thermal resistance, junction to case per leg RthJC - - 0.19
°C/Wper module - - 0.095
Typical thermal resistance, case to heatsink RthCS -0.10-
Weight -68- g
-2.4-oz.
Mounting torque (1) 30 (3.4) - 40 (4.6)
lbf · in
(N · m)
center hole 12 (1.4) - 18 (2.1)
Terminal torque 30 (3.4) - 40 (4.6)
Vertical pull --80
lbf in
2" lever pull --35
1
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.2 2.01.0 1.4
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.6 1.6 1.8
1000
0.4 0.8 1.2
100
0.1
1
10
100
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
200 400300
1000
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10 000
VS-HFA240NJ40CPbF
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Revision: 11-Jan-17 3Document Number: 94063
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Leg)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current (Per Leg)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
1000
10 000
1 10 100 1000
100
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
TJ = 25 °C
80
160
0 100 300 500
0
I
F(AV)
- DC Forward Current (A)
Maximum Allowable Case Temperature (°C)
DC
140
120
100
60
40
20
200 400
250
0
100 1000
dIF/dt (A/µs)
trr (ns)
50
TJ = 125 °C
TJ = 25 °C
350
150
100
IF = 200 A
IF = 120 A
IF = 50 A
200
300
400
450
70
60
0
100 1000
dIF/dt (A/µs)
IRRM (A)
40
IF = 200 A
IF = 120 A
IF = 50 A
TJ = 125 °C
TJ = 25 °C
20
50
30
10
6000
4000
100 1000
dI
F
/dt (A/µs)
Q
rr
(nC)
TJ = 125 °C
TJ = 25 °C
2000
1000
3000
0
5000
IF = 200 A
IF = 120 A
IF = 50 A
1000
100
100 1000
dIF/dt (A/µs)
dI(rec)M/dt (A/µs)
TJ = 125 °C
TJ = 25 °C
200 A
120 A
50 A
10 000
VS-HFA240NJ40CPbF
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Revision: 11-Jan-17 4Document Number: 94063
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Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Fig. 10 - - Reverse Recovery Parameter Test Circuit
Fig. 11 - Reverse Recovery Waveform and Definitions
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
0.001
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-HFA240NJ40CPbF
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-17 5Document Number: 94063
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Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95021
V(AVAL)
VR(RATED)
IL(PK)
Decay
time
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode
Vd = 50 V
L = 100 µH
- HEXFRED
®
family, electron irradiated
- Average current rating
- NJ = TO-244
- Voltage rating (400 V)
- C = two diodes common cathode
- Lead (Pb)-free
Device code
HFA 240 NJ 40 C PbF
1
2
3
4
5
6
7
621 43 5 7
VS-
- Vishay Semiconductors product
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 24-Apr-15 1Document Number: 95021
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TO-244
DIMENSIONS in millimeters (inches)
3
2
3
1
Ø 5.2 (Ø 0.20)
9.6 (0.37) MIN.
93 (3.66) MAX.
¼" - 20 UNC
80 (3.15)
40 (1.57)
13 (0.51)
35 (1.37) REF.
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
12.6 (0.5)
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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