AUIRFR1010Z
2 2015-11-19
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.13mH, RG = 25, IAS = 42A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 5.8 7.5 m VGS = 10V, ID = 42A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA
gfs Forward Trans conductance 31 ––– ––– S VDS = 25V, ID = 42A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55 V, VGS = 0V
––– ––– 250 VDS = 55V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 63 95
nC
ID = 42A
Qgs Gate-to-Source Charge ––– 17 ––– VDS = 44V
Qgd Gate-to-Drain Charge ––– 23 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 28V
tr Rise Time ––– 76 ––– ID = 42A
td(off) Turn-Off Delay Time ––– 42 ––– RG = 7.6
tf Fall Time ––– 48 ––– VGS = 10V
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 2840 –––
pF
VGS = 0V
Coss Output Capacitance ––– 470 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz
Coss Output Capacitance ––– 1630 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 360 ––– VGS = 0V, VDS = 44V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 560 ––– VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 42
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 360 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 42A,VGS = 0V
trr Reverse Recovery Time ––– 24 36 ns TJ = 25°C ,IF = 42A, VDD = 28V
Qrr Reverse Recovery Charge ––– 20 30 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)