MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC523
GaAs MMIC I/Q MIXER
15 - 23.6 GHz
v02.1007
General Description
FeaturesTypical Applications
The HMC523 is a compact I/Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test  xture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Electrical Speci cations, TA = +25° C, IF= 100 MHz, LO = +17 dBm*
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range, RF/LO 15 - 21 21 - 23.6 GHz
Frequency Range, IF DC - 3.5 DC - 3.5 GHz
Conversion Loss (As IRM) 8 10 9.5 11.5 dB
Image Rejection 20 27 20 25 dB
1 dB Compression (Input) +15 +18 dBm
LO to RF Isolation 40 50 40 50 dB
LO to IF Isolation 20 25 17 22 dB
IP3 (Input) +25 +20 dBm
Amplitude Balance 0.3 0.3 dB
Phase Balance 2 3 Deg
* Unless otherwise noted, all measurements performed as downconverter.
Functional Diagram
The HMC523 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
• Digital Radio
• Military
• VSAT
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 27 dB
LO to RF Isolation: 50 dB
High Input IP3: +25 dBm
Die Size: 1.49 x 1.14 x 0.1 mm
MIXERS - I/Q MIXERS / IRM - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs. Temperature Image Rejection vs. Temperature
Conversion Gain vs. LO Drive Return Loss
-20
-15
-10
-5
0
13 14 15 16 17 18 19 20 21 22 23 24
+25C
+85C
-55C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
0
10
20
30
40
13 14 15 16 17 18 19 20 21 22 23 24
+25C
+85C
-55C
IMAGE REJECTION (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
13 14 15 16 17 18 19 20 21 22 23 24
+11 dBm
+13 dBm
+15 dBm
+17 dBm
+19 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-15
-10
-5
0
13 14 15 16 17 18 19 20 21 22 23 24
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
13 14 15 16 17 18 19 20 21 22 23 24
+25C
+85C
-55C
P1dB (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
25
30
13 14 15 16 17 18 19 20 21 22 23 24
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
Input P1dB vs. Temperature Input IP3 vs. LO Drive
Data Taken As IRM With External IF 90° Hybrid
HMC523
v02.1007 GaAs MMIC I/Q MIXER
15 - 23.6 GHz
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Isolations
Amplitude Balance vs. LO Drive
IF Bandwidth*
Phase Balance vs. LO Drive
-60
-50
-40
-30
-20
-10
13 14 15 16 17 18 19 20 21 22 23 24
ISOLATION (dB)
RF FREQUENCY (GHz)
LO/RF
RF/IF1
LO/IF1
RF/IF2
LO/IF2
-20
-15
-10
-5
0
0.5 1 1.5 2 2.5 3 3.5
RETURN LOSS
CONVERSION GAIN
RESPONSE (dB)
IF FREQUENCY (GHz)
-4
-3
-2
-1
0
1
2
3
4
13 14 15 16 17 18 19 20 21 22 23 24
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
-15
-10
-5
0
5
10
15
13 14 15 16 17 18 19 20 21 22 23 24
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
13 14 15 16 17 18 19 20 21 22 23 24
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
13 14 15 16 17 18 19 20 21 22 23 24
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
SIDEBAND REJECTION (dBc)
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
Upconverter Performance Sideband
Rejection vs. LO Drive
Quadrature Channel Data Taken Without IF 90° Hybrid
* Conversion gain data taken with external IF 90° hybrid
HMC523
v02.1007 GaAs MMIC I/Q MIXER
15 - 23.6 GHz
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 85
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Harmonics of LO
LO Freq. (GHz) nLO Spur at RF Port
12
15.5 47 51
17 49 56
18.5 50 63
20 47 73
21.5 50 72
23 53 71
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
MxN Spurious Outputs
nLO
mRF01234
0xx-929xxxx
13404661xx
28765826287
3xx87928690
4xxxx849292
RF = 17.6 GHz @ -10 dBm
LO = 17.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input +20 dBm
LO Drive +27 dBm
Channel Temperature 150°C
Continuous Pdiss (T=85°C)
(derate 5.22 mW/°C above 85°C) 340 mW
Thermal Resistance (RTH)
(junction to die bottom) 191.5 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 deg °C
ESD Sensitivity (HBM) Class 1A
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC523
v02.1007 GaAs MMIC I/Q MIXER
15 - 23.6 GHz
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 86
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1RFThis pad is AC coupled and matched to
50 Ohms.
4LOThis pad is AC coupled and matched to
50 Ohms.
2 (5) IF2
This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary IF frequency
range. For operation to DC, this pad must not
source/sink more than 3mA of current or die non-
function and possible die failure will result. Pads 5
and 6 are alternate IF ports.
3 (6) IF1
GND The backside of the die must be connected
to RF/DC ground.
Pad Descriptions
Assembly Diagrams
HMC523
v02.1007 GaAs MMIC I/Q MIXER
15 - 23.6 GHz
MIXERS - I/Q MIXERS / IRM - CHIP
3
3 - 87
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin  lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin  lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
 a t .
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC523
v02.1007 GaAs MMIC I/Q MIXER
15 - 23.6 GHz