MBR60100CT
www.vishay.com Vishay General Semiconductor
Revision: 17-Aug-15 1Document Number: 88892
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode High Voltage Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 30 A
VRRM 100 V
IFSM 350 A
VF at IF = 30 A 0.64 V
TJ max. 175 °C
Package TO-220AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
123
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR60100CT UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Working peak reverse voltage VRWM 100 V
Maximum DC blocking voltage VDC 100 V
Maximum average forward rectified current total device IF(AV)
60 A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 350 A
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz IRRM 1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) ERSM 25 mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.0 A, L = 40 mH EAS 20 mJ
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C
MBR60100CT
www.vishay.com Vishay General Semiconductor
Revision: 17-Aug-15 2Document Number: 88892
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
Fig. 1 - Forward Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode (1)
IF = 30 A TJ= 25 °C
VF
0.78 0.82
V
IF = 60 A 0.92 1
IF = 30 A TJ = 125 °C 0.64 0.69
IF = 60 A 0.78 0.83
Reverse current per diode (2) VR = 100 V TJ = 25 °C IR
8 100 μA
TJ = 125 °C 8.5 20 mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR60100CT UNIT
Typical thermal resistance per diode RJC 0.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR60100CT-E3/45 2.068 45 50/tube Tube
0
20
0 25 50 100 125 150 175
30
40
50
60
70
Average Forward Current (A)
10
Case Temperature (°C)
0
100
200
300
10010
1
Number of Cycles at 60 Hz
Average Forward Current (A)
400
MBR60100CT
www.vishay.com Vishay General Semiconductor
Revision: 17-Aug-15 3Document Number: 88892
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
100
10
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
TJ = 150 °C
1
0.1
10
100
1000
10 000
10020100 30405060708090
Percent of Rated Peak Reverse Voltage (%)
100 000
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Reverse Current (µA)
100
10 000
0.1 1 10 100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
0.1
0.01
1
110 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
TO-220AB
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.047 (1.20) 0.343 (8.70)
TYP.
0.067 (1.70)
TYP.
0.331(8.40)
TYP.
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
PIN
2
3
1
0.118 (3.00)
TYP.
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.100 (2.54)
TYP.
0.638 (16.20)
0.598 (15.20)
0.055 (1.40)
0.049 (1.25)
0.185 (4.70)
0.169 (4.30)
0.154 (3.90)
0.138 (3.50)
0.370 (9.40)
0.354 (9.00)
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
1.161 (29.48)
1.106 (28.08)
0.024 (0.60)
0.018 (0.45)
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Revision: 01-Jan-2019 1Document Number: 91000
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