VESD03A1B-HD1 www.vishay.com Vishay Semiconductors ESD-Protection Diode in LLP1006-2L FEATURES * Ultra compact LLP1006-2L package * Low package height < 0.4 mm 1 2 * 1-line ESD-protection * Low leakage current < 0.5 A 20856 * Low load capacitance CD = 15 pF (VR = 2.5 V; f = 1 MHz) 20855 * ESD-protection acc. IEC 61000-4-2 30 kV contact discharge 30 kV air discharge MARKING (example only) XY * High surge current acc. IEC61000-4-5 IPP > 3.5 A * Soldering can be checked by standard vision inspection. No X-ray necessary 21121 Bar = cathode marking X = date code Y = type code (see table below) * Pin plating NiPdAu (e4) no whisker growth * e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE on 7" REEL) MINIMUM ORDER QUANTITY VESD03A1B-HD1-GS08 8000 8000 DEVICE NAME VESD03A1B-HD1 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS VESD03A1B-HD1 LLP1006-2L J 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.5, 20-Jun-12 TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5; tP = 8/20 s; single shot IPPM 3.5 A Acc. IEC 61000-4-5; tP = 8/20 s; single shot PPP Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 31 W 30 kV 30 kV TJ - 40 to + 125 C Tstg - 55 to + 150 C Document Number: 81851 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD03A1B-HD1 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 0.5 A VR 3.3 - - V Reverse current at VR = 3.5 V IR - 0.04 0.5 A Reverse breakdown voltage at IR = 1 mA VBR 5 6 6.6 V at IPP = 1 A VC - 6.2 7.5 V at IPP = IPPM = 3.5 A VC - 7.6 9 V at IPP = 0.2 A VF - 0.9 1.2 V at IPP = 1 A VF - 1.25 - V Protection paths Reverse stand-off voltage Reverse clamping voltage Forward clamping voltage Capacitance MAX. UNIT - 1 lines - 3.3 V at IPP = IPPM = 3.5 A VF - 1.8 - V at VR = 0 V; f = 1 MHz CD - 25 28 pF at VR = 2.5 V; f = 1 MHz CD - 15 - pF BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD03A1B-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD03A1B-HD1 clamping behaviour is bidirectional and asymmetrical (BiAs). 2 L1 1 BiAs Ground Rev. 1.5, 20-Jun-12 20925 Document Number: 81851 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD03A1B-HD1 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 120 % Rise time = 0.7 ns to 1 ns Discharge Current IESD 100 % 10 80 % 1 IF (mA) 60 % 53 % 0.1 40 % 27 % 0.01 20 % 0.001 0.5 0% - 10 0 10 20 30 40 50 60 70 80 90 100 20557 0.6 0.7 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) 0.8 0.9 1 VF (V) 21115 Time (ns) Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF 7 8 s to 100 % 100 % 6 80 % 5 4 VR (V) IPPM 60 % 20 s to 50 % 3 40 % 2 20 % 1 0% 0 10 20 30 0 0.01 40 Time (s) 20548 0.1 1 Fig. 2 - 8/20 s Peak Pulse Current Wave Form acc. IEC 61000-4-5 10 100 1000 10000 IR (A) 21116 Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR 30 10 f = 1 MHz 8 25 6 20 15 Measured acc. IEC 61000-4-5 (8/20 s - wave form) 4 VC (V) CD (pF) Positive surge 2 10 VC 0 5 -2 0 -4 Negative surge 0 21114 1 2 3 4 5 6 VR (V) Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Rev. 1.5, 20-Jun-12 0 21117 1 2 3 4 IPP (A) Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP Document Number: 81851 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD03A1B-HD1 www.vishay.com Vishay Semiconductors 60 Acc. IEC 61000-4-2 + 8 kV contact discharge 50 40 VC-ESD (V) 30 20 10 0 - 10 - 20 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21118 Fig. 7 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 Acc. IEC 61000-4-2 - 8 kV contact discharge 30 20 VC-ESD (V) 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 21119 Fig. 8 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 250 200 Positive discharge 150 VC-ESD (V) 100 50 VC-ESD 0 - 50 - 100 Negative discharge - 150 - 200 Acc. IEC 61000-4-2 contact discharge - 250 0 21120 5 10 15 20 25 30 35 VESD (kV) Fig. 9 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Rev. 1.5, 20-Jun-12 Document Number: 81851 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD03A1B-HD1 www.vishay.com Vishay Semiconductors 0.25 [0.010] 0.15 [0.006] PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L 0.55 [0.022] 0.45 [0.018] 0.3 [0.012] 0.2 [0.008] 0.125 [0.005] Ref. 0.65 [0.026] 0.55 [0.022] 0.05 [0.002] 0 [0.000] 0.4 [0.016] 0.33 [0.013] 0.45 [0.018] 0.35 [0.014] Orientation Identification 1.05 [0.041] 0.95 [0.037] 1 [0.039] 0.2 [0.008] 0.5 [0.020] 0.6 [0.024] Foot print recommendation: solder resist mask solder pad Created - Date: 13. July. 2007 Rev. 5 - Date: 21 April 2010 Document no.:S8-V-3906.04-005 (4) 20812 Rev. 1.5, 20-Jun-12 0.05 [0.002] 0.25 [0.010] 0.5 [0.020] soldermask opening 0.03 measured middle of the package Document Number: 81851 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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