VESD03A1B-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.5, 20-Jun-12 1Document Number: 81851
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESD-Protection Diode in LLP1006-2L
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.5 μA
• Low load capacitance CD = 15 pF
(VR = 2.5 V; f = 1 MHz)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 IPP > 3.5 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
20855
20856
21
21121
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL) MINIMUM ORDER QUANTITY
VESD03A1B-HD1 VESD03A1B-HD1-GS08 8000 8000
PACKAGE DATA
DEVICE NAME PACKAGE
NAME
TYPE
CODE WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD03A1B-HD1 LLP1006-2L J 0.72 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM 3.5 A
Peak pulse power Acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP 31 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature Tstg - 55 to + 150 °C
VESD03A1B-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.5, 20-Jun-12 2Document Number: 81851
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD03A1B-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD03A1B-HD1 clamping behaviour is bidirectional
and asymmetrical (BiAs).
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --3.3V
Reverse voltage at IR = 0.5 μA VR3.3 - - V
Reverse current at VR = 3.5 V IR- 0.04 0.5 μA
Reverse breakdown voltage at IR = 1 mA VBR 566.6V
Reverse clamping voltage at IPP = 1 A VC-6.27.5V
at IPP = IPPM = 3.5 A VC-7.69 V
Forward clamping voltage
at IPP = 0.2 A VF-0.91.2V
at IPP = 1 A VF-1.25- V
at IPP = IPPM = 3.5 A VF-1.8- V
Capacitance at VR = 0 V; f = 1 MHz CD-2528pF
at VR = 2.5 V; f = 1 MHz CD-15-pF
L1
20925
2
1
Ground
BiAs
VESD03A1B-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.5, 20-Jun-12 3Document Number: 81851
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 5 - Typical Reverse Voltage VR vs.
Reverse Current IR
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current IESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
0
5
10
15
20
25
30
0123456
V
R
(V)
C
D
(pF)
21114
f = 1 MHz
0.001
0.01
0.1
1
10
100
0.5 0.6 0.7 0.8 0.9 1
VF (V)
IF (mA)
21115
0
1
2
3
4
5
6
7
0.01 0.1 1 10 100 1000 10000
IR (µA)
VR (V)
21116
VESD03A1B-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.5, 20-Jun-12 4Document Number: 81851
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 9 - Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
- 20
- 10
0
10
20
30
40
50
60
- 100 10 2030405060708090
Acc. IEC 61000-4-2
+ 8 kV
contact discharge
t (ns)
V
C-ESD
(V)
21118
- 60
- 50
- 40
- 30
- 20
- 10
0
10
20
30
40
- 100 102030405060708090
Acc. IEC 61000-4-2
- 8 kV
contact discharge
t (ns)
V
C-ESD
(V)
21119
- 250
- 200
- 150
- 100
- 50
0
50
100
150
200
250
0 5 10 15 20 25 30 35
VESD (kV)
VC-ESD (V)
21120
Acc. IEC 61000-4-2 contact discharge
VC-ESD
Positive discharge
Negative discharge
VESD03A1B-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.5, 20-Jun-12 5Document Number: 81851
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L
20812
Document no.:S8-V-3906.04-005 (4)
Rev. 5 - Date: 21 April 2010
Created - Date: 13. July. 2007
Foot print recommendation:
solder
resist mask
solder pad
0.55 [0.022]
0.45 [0.018]
0.25 [0.010]
0.15 [0.006]
0.45 [0.018]
0.35 [0.014]
0.3 [0.012]
0.2 [0.008]
0.4 [0.016]
0.33 [0.013]
1.05 [0.041]
0.95 [0.037]
soldermask opening ± 0.03
measured middle of the package
0.05 [0.002]
0 [0.000]
0.125 [0.005] Ref.
0.65 [0.026]
0.55 [0.022]
0.05 [0.002]
0.25 [0.010]
0.5 [0.020]
1 [0.039]
0.5 [0.020]
0.6 [0.024]
0.2 [0.008]
Orientation Identification
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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