SZBZX84C3V0ET1G - ON Semiconductor

October, 2016 − Rev. 10

1Publication Order Number:

BZX84C2V4ET1/D

BZX84CxxxET1G Series,

SZBZX84CxxxET1G Series

Zener Voltage Regulators

250 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Specification Features

•250 mW Rating on FR−4 or FR−5 Board

•Zener Breakdown Voltage Range − 2.4 V to 75 V

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•ESD Rating of Class 3 (> 16 kV) per Human Body Model

•Peak Power − 225 W (8 X 20 ms)

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Power Dissipation @ 20 ms (Note 1)

@ TL ≤ 25°C

Ppk 225 W

Total Power Dissipation on FR−5 Board,

(Note 2) @ TA = 25°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

RqJA

250

2.0

500

mW/°C

°C/W

Total Power Dissipation on Alumina

Substrate, (Note 3) @ TA = 25°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

RqJA

300

2.4

417

mW/°C

°C/W

Junction and Storage Temperature Range TJ, Tstg −65 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 9.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

Device Package Shipping†

ORDERING INFORMATION

SOT−23

CASE 318

STYLE 8

Cathode

Anode

MARKING DIAGRAM

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

DEVICE MARKING INFORMATION

BZX84CxxxET1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

xxx M G

BZX84CxxxET3G SOT−23

(Pb−Free)

10,000 /

Tape & Reel

xxx = Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation may vary depending up-

on manufacturing location.

(Note: Microdot may be in either location)

SZBZX84CxxxET1G SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SZBZX84CxxxET3G SOT−23

(Pb−Free)

10,000 /

Tape & Reel

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C

unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

QVZMaximum Temperature Coefficient of VZ

CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator

IZT

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Device*

Device

Marking

VZ1 (V)

ZT1 =5mA

(Note 4)

ZZT1

(W)

@ IZT1

5 mA

VZ2 (V)

ZT2 =1

(Note 4)

ZZT2

(W)

@ IZT2

1 mA

VZ3 (V)

ZT3=20 mA

(Note 4)

ZZT3

(W)

IZT3=

20 mA

Max

Reverse

Leakage

Current

qVZ

(mV/k)

@ IZT1=5 mA

C (pF)

VR = 0

f =

1 MHz

Min Nom Max Min Max Min Max

(V)

mA@Min Max

BZX84C2V4ET1G BA1 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1.0 −3.5 0 450

BZX84C2V7ET1G BA2 2.5 2.7 2.9 100 1.9 2.4 600 3.0 3.6 50 20 1.0 −3.5 0 450

BZX84C3V0ET1G BA3 2.8 3.0 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1.0 −3.5 0 450

BZX84C3V3ET1G BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5.0 1.0 −3.5 0 450

BZX84C3V6ET1G BA5 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 −3.5 0 450

BZX84C3V9ET1G BA6 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 −3.5 −2.5 450

BZX84C4V3ET1G BA7 4.0 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 −3.5 0 450

BZX84C4V7ET1G BA9 4.4 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 −3.5 0.2 260

BZX84C5V1ET1G BB1 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 −2.7 1.2 225

BZX84C5V6ET1G BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 −2 2.5 200

BZX84C6V2ET1G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185

BZX84C6V8ET1G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155

BZX84C7V5ET1G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140

BZX84C8V2ET1G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135

BZX84C9V1ET1G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130

BZX84C10ET1G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130

BZX84C11ET1G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130

BZX84C12ET1G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130

BZX84C13ET1G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120

BZX84C15ET1G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110

BZX84C16ET1G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105

BZX84C18ET1G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100

BZX84C20ET1G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85

BZX84C22ET1G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85

BZX84C24ET1G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80

Device*

Device

Marking

VZ1 Below

ZT1 =2mA

ZZT1

Below

@ IZT1

2 mA

VZ2 Below

ZT2 =

0.1 mA

ZZT2

Below

@ IZT4

0.5 mA

VZ3 Below

ZT3 =10mA

ZZT3

Below

@ IZT3

10 mA

Max

Reverse

Leakage

Current

qVZ

(mV/k)

Below

@ IZT1 = 2

C (pF)

@ VR

= 0

f =

1 MHz

Min Nom Max Min Max Min Max

(V)

mA@Min Max

BZX84C27ET1G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30ET1G BD1 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33ET1G BD2 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36ET1G BD3 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39ET1G BD4 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43ET1G BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47ET1G BD5 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40

BZX84C51ET1G BD6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56ET1G BD7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62ET1G BD8 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68ET1G BD9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75ET1G BE1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C

* Include SZ-prefix devices where applicable.

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ, NOMINAL ZENER VOLTAGE (V)

−3

−2

−1

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TYPICAL TC VALUES

VZ @ IZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

VZ @ IZT

100

VZ, NOMINAL ZENER VOLTAGE

Figure 3. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

TJ = 255C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000

100

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

150°C75°C 25°C 0°C

TYPICAL TC VALUES

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25°C

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (V)

100

0.1

0.0110 30 50 70 90

IR, LEAKAGE CURRENT ( A)μ

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current

1000

100

0.1

0.01

0.001

0.0001

0.00001 80706050403020100

+150°C

+25°C

−55°C

IZ, ZENER CURRENT (mA)

Figure 7. Zener Voltage versus Zener Current

(VZ Up to 12 V)

Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

100

Figure 9. 8 × 20 ms Pulse Waveform

0020406080

t, TIME (ms)

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

HALF VALUE IRSM/2 @ 20 ms

% OF PEAK PULSE CURRENT

PEAK VALUE IRSM @ 8 ms

TA = 25°C

BZX84CxxxET1G Series, SZBZX84CxxxET1G Series

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T____

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

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Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BZX84C2V4ET1/D

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SZBZX84C27LT3G SZBZX84C2V4ET1G SZBZX84C2V7ET1G SZBZX84C30ET1G SZBZX84C33ET1G

SZBZX84C36ET1G SZBZX84C39ET1G SZBZX84C3V0ET1G SZBZX84C3V6ET1G SZBZX84C3V9ET1G

SZBZX84C3V9ET3G SZBZX84C43ET1G SZBZX84C47ET1G SZBZX84C4V3ET1G SZBZX84C51ET1G

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SZBZX84C7V5LT3G SZBZX84C15ET1G SZBZX84C18ET1G SZBZX84C33ET3G SZBZX84C7V5LT1G

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