PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
1.0A Fast Recovery Glass Passivated Rectifier
Features
D
Glass passivated die construction
D
Diffused junction
D
Fast switching for high efficiency
D
High current capability and low forward
voltage drop
D
Surge overload rating to 30A peak
D
Low reverse leakage current
D
Plastic material – UL Recognition flammability
classification 94V–0 14 451
DO – 41
A – 405
Absolute Maximum Ratings
Tj = 25
_
CParameter Test
Conditions Type Symbol Value Unit
Repetitive peak reverse voltage PR1001G/GL VRRM 50 V
g
=Working peak reverse voltage
DC Bl ki lt
PR1002G/GL
RRM
=VRWM
V
100 V
=DC Blocking voltage PR1003G/GL =VR200 V
PR1004G/GL 400 V
PR1005G/GL 600 V
PR1006G/GL 800 V
PR1007G/GL 1000 V
Peak forward surge current IFSM 30 A
Average forward current TA=55
°
C IFAV 1 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
C
Parameter Test
Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A VF1.3 V
Reverse current TA=25
°
C IR5
m
A
TA=100
°
C IR50
m
A
Reverse recovery time IF=1A, IR=0.5A, PR1001G/GL–1004G/GL trr 150 ns
y
F R
Irr=0.25A PR1005G/GL trr 250 ns
PR1006G/GL–1007G/GL trr 500 ns
Diode capacitance VR=4V, f=1MHz PR1001G/GL–1004G/GL CD15 pF
R
PR1005G/GL–1007G/GL CD8 pF
Thermal resistance
junction to ambient RthJA 95 K/W
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
0
0.2
0.4
0.6
0.8
1.0
25 50 75 100 125 150 175 200
15490 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
Single phase half–wave
60 Hz resistive or inductive load
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.01
0.1
1.0
10
0.6 0.8 1.0 1.2 1.4
Pulse Width = 300 µs
15491
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
Tj = 25°C
Figure 2. Typ. Forward Current vs. Forward Voltage
0
10
20
30
1 10 100
8.3 ms Single Half–Sine–W ave
JEDEC method
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15492
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
1
10
100
1 10 100
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15493
Tj = 25°C
f = 1 MHz
PR1001 – PR1004
PR1005 – PR1007
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14447
Case: molded plastic
Polarity: cathode band
Approx. weight: DO–41 0.35 grams,
A–405 0.20 grams
Mounting position: any
Marking: type number
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
