P4KE Series New Product Vishay Semiconductors formerly General Semiconductor TRANSZORB(R) Transient Voltage Suppressors d * e d n nge e t x E e RaFeatures g a t l Vo V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 440V Peak Pulse Power 400W DO-204AL (DO-41 Plastic) * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * 400W peak pulse power capabililty on 10/1000s waveform, repetition rate (duty cycle): 0.01% * Excellent clamping capability * Low incremental surge resistance * Very fast response time 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. Mechanical Data Case: JEDEC DO-204AL molded plastic body over passivated junction Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 265OC/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension Polarity: For unidirectional types the color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.012oz., 0.3g Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 10K/carton 54 - 5.5K per 13" paper Reel (52mm horiz. tape), 16.5K/carton 73 - 3K per horiz. tape & Ammo box, 30K/carton 0.205 (5.2) 0.160 (4.1) Dimensions in inches and (millimeters) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. * Voltages above 440V available Q3-2002 Devices for Bidirectional Applications For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440 (e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions. Maximum Ratings and Characteristics (TA = 25C unless otherwise noted) Parameter Symbol (1) Peak power dissipation with a 10/1000s waveform (Fig. 1) Peak pulse current wih a 10/1000s waveform(1) Steady state power dissipation at TL = 75OC, lead lengths 0.375" (9.5mm)(2) Peak forward surge current, 8.3ms single half sine-wave unidirectional only (3) Maximum instantaneous forward voltage at 25A for unidirectional only (4) Typical thermal resistance junction-to-lead Typ. thermal resistance junction-to-ambient, LLead = 10mm Operating junction and storage temperature range Limit Unit PPPM 400 W IPPM See Next Table A PM(AV) 1.0 W IFSM 40 A VF 3.5/5.0 V RJL RJA TJ, TSTG 60 C/W 100 C/W -55 to +175 C O Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2 (2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40mm) per Fig. 5 (3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (4) VF = 3.5V for P4KE220(A) & below; VF = 5.0V for P4KE250(A) & above Document Number 88365 18-Jul-02 www.vishay.com 1 P4KE Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Breakdown Voltage V(BR) at IT(1) (V) Device Type MIN MAX Test Current IT (mA) P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16 P4KE16A P4KE18 P4KE18A P4KE20 P4KE20A P4KE22 P4KE22A P4KE24 P4KE24A P4KE27 P4KE27A P4KE30 P4KE30A P4KE33 P4KE33A P4KE36 P4KE36A P4KE39 P4KE39A P4KE43 P4KE43A P4KE47 P4KE47A P4KE51 P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.6 58.8 68.2 65.1 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 www.vishay.com 2 Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID(3) (A) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 1000 1000 500 500 200 200 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Current IPPM(2) (A) Maximum Clamping Voltage at IPPM VC (V) Maximum Temperature Coefficient of V(BR) (% / C) 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 5.9 6.2 5.4 5.7 5.0 5.2 4.5 4.7 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 0.057 0.057 0.061 0.061 0.065 0.06 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104 Document Number 88365 18-Jul-02 P4KE Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (Con't.) Ratings at 25C ambient temperature unless otherwise specified. Breakdown Voltage V(BR) at IT(1) (V) Device Type MIN MAX Test Current IT (mA) P4KE68 P4KE68A P4KE75 P4KE75A P4KE82 P4KE82A P4KE91 P4KE91A P4KE100 P4KE100A P4KE110 P4KE110A P4KE120 P4KE120A P4KE130 P4KE130A P4KE150 P4KE150A P4KE160 P4KE160A P4KE170 P4KE170A P4KE180 P4KE180A P4KE200 P4KE200A P4KE220 P4KE220A P4KE250 P4KE250A P4KE300 P4KE300A P4KE350 P4KE350A P4KE400 P4KE400A P4KE440 P4KE440A P4KE480 P4KE480A P4KE510 P4KE510A P4KE540 P4KE540A 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105 108 114 117 124 135 143 144 152 153 162 162 171 180 190 198 209 225 237 270 285 315 333 360 380 396 418 432 456 459 485 486 513 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 484 462 528 504 561 535 594 567 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID(3) (A) 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102 105 111 121 128 130 136 138 145 146 154 162 171 175 185 202 214 243 256 284 300 324 342 356 376 389 408 413 434 437 459 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Current IPPM(2) (A) Maximum Clamping Voltage at IPPM VC (V) Maximum Temperature Coefficient of V(BR) (% / C) 4.1 4.3 3.7 3.9 3.4 3.5 3.1 3.2 2.8 2.9 2.5 2.6 2.3 2.4 2.1 2.2 1.9 1.9 1.7 1.8 1.6 1.7 1.6 1.6 1.4 1.5 1.2 1.2 1.1 1.2 0.93 1.0 0.79 0.83 0.70 0.73 0.63 0.66 0.58 0.61 0.55 0.57 0.52 0.54 98.0 92.0 108 103 118 113 131 125 144 137 158 152 173 165 187 179 215 207 230 219 244 234 258 246 287 274 344 328 360 344 430 414 504 482 574 548 631 602 686 658 729 698 772 740 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Notes: (1) Pulse test: tp 50ms (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) For bidirectional types having VWM of 10 volts and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 Document Number 88365 18-Jul-02 www.vishay.com 3 P4KE Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Pulse Derating Curve 100 Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % PPPM -- Peak Pulse Power (kW) Fig. 1 - Peak Pulse Power Rating Curve 100 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10 1 0.1 75 50 25 0 0.1s 1.0s 10s 100s 1.0ms 10ms 25 0 td -- Pulse Width (sec.) Fig. 3 -- Pulse Waveform 10/1000sec. Waveform as defined by R.E.A. td 1.0 0 3.0 2.0 CJ -- Junction Capacitance Half Value -- IPPM 2 50 0 PM(AV), Steady State Power Dissipation (W) Peak Value IPPM 100 150 125 175 200 TJ = 25C f = 1.0MHz Vsig = 50mVp-p 1,000 Measured at Zero Bias Measured at Stand-Off Voltage, VWM 100 10 1.0 4.0 10 100 200 t -- Time (ms) V(BR) -- Breakdown Voltage (V) Fig. 5 - Steady State Power Derating Curve Fig. 6 - Max. Non-Repetitive Forward Surge Current Uni-Directional Only 200 1.00 L = 0.375" (9.5mm) Lead Lengths 60 HZ Resistive or Inductive Load 0.75 0.50 1.6 x 1.6 x .040" (40 x 40 x 1mm) Copper Heat Sinks 0.25 0 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 100 50 10 0 25 50 75 100 125 150 175 200 1 5 Transient Thermal Impedance (C/W) Measured at Devices Stand-off Voltage, VWM TA = 25C 1 0.1 0.01 0 100 200 300 400 V(BR) -- Breakdown Voltage (V) www.vishay.com 4 50 100 Fig. 8 - Typ. Transient Thermal Impedance Fig. 7 - Typical Reverse Leakage Characteristics 100 10 10 Number of Cycles at 60 Hz TL -- Lead Temperature (C) ID -- Instantaneous Reverse Leakage Current (A) 100 Fig. 4 - Typ. Junction Capacitance Uni-Directional TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. 75 10,000 IFSM -- Peak Forward Surge Current (A) IPPM -- Peak Pulse Current, % IRSM 150 50 TA -- Ambient Temperature (C) 500 600 100 10 1 0.001 0.01 0.1 1 10 100 1000 tp -- Pulse Duration (sec) Document Number 88365 18-Jul-02