Extended
Voltage Range*
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
Dimensions in inches
and (millimeters)
DO-204AL (DO-41 Plastic)
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440
(e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Peak power dissipation with a 10/1000µs waveform(1) (Fig. 1) PPPM 400 W
Peak pulse current wih a 10/1000µs wavefor m(1) IPPM See Next Table A
Steady state power dissipation PM(AV) 1.0 W
at TL = 75OC, lead lengths 0.375” (9.5mm)(2)
Peak forward surge current, 8.3ms IFSM 40 A
single half sine-wave unidirectional only(3)
Maximum instantaneous forward voltage VF3.5/5.0 V
at 25A for unidirectional only(4)
Typical ther mal resistance junction-to-lead RθJL 60 °C/W
Typ.thermal resistance junction-to-ambient, LLead = 10mm RθJA 100 °C/W
Operating junction and storage temperature range TJ, TSTG – 55 to +175 OC
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) VF = 3.5V for P4KE220(A) & below;VF = 5.0V for P4KE250(A) & above
V(BR) Unidirectional 6.8 to 540V
V(BR) Bidirectional 6.8 to 440V
Peak Pulse Power 400W
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 400W peak pulse power capabililty on 10/1000µs wave-
for m, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over
passivated junction
Terminals: Axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed: 265OC/10 seconds,
0.375” (9.5mm) lead length, 5lbs. (2.3 kg) tension
Polarity: For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position: Any Weight: 0.012oz., 0.3g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13” paper Reel
(52mm horiz. tape), 16.5K/car ton
73 – 3K per horiz. tape & Ammo box, 30K/car ton
*Voltages above 440V available Q3-2002
New Product
TRANSZORB®Transient Voltage Suppressors
P4KE Series
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88365 www.vishay.com
18-Jul-02 1
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum
Breakdown Voltage Reverse Maximum Maximum Maximum
V(BR) at IT(1) Test Stand-off Leakage Peak Pulse Clamping Temperature
(V) Current Voltage at VWM Current Voltage at Coefficient
ITVWM
I
D
(3)
IPPM(2) IPPM of V(BR)
Device Type MIN MAX (mA) (V)
(µA)
(A) VC(V) (% / °C)
P4KE6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.057
P4KE6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.057
P4KE7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.061
P4KE7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.061
P4KE8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.065
P4KE8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.06
P4KE9.1 8.19 10.0 1.0 7.37 50 29.0 13.8 0.068
P4KE9.1A 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068
P4KE10 9.00 11.0 1.0 8.10 10 26.7 15.0 0.073
P4KE10A 9.50 10.5 1.0 8.55 10 27.6 14.5 0.073
P4KE11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.075
P4KE11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075
P4KE12 10.8 13.2 1.0 9.72 1.0 23.1 17.3 0.076
P4KE12A 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078
P4KE13 11.7 14.3 1.0 10.5 1.0 21.1 19.0 0.081
P4KE13A 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081
P4KE15 13.5 16.5 1.0 12.1 1.0 18.2 22.0 0.084
P4KE15A 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084
P4KE16 14.4 17.6 1.0 12.9 1.0 17.0 23.5 0.086
P4KE16A 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086
P4KE18 16.2 19.8 1.0 14.5 1.0 15.1 26.5 0.088
P4KE18A 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088
P4KE20 18.0 22.0 1.0 16.2 1.0 13.7 29.1 0.090
P4KE20A 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090
P4KE22 19.8 24.2 1.0 17.8 1.0 12.5 31.9 0.092
P4KE22A 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092
P4KE24 21.6 26.4 1.0 19.4 1.0 11.5 34.7 0.094
P4KE24A 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094
P4KE27 24.3 29.7 1.0 21.8 1.0 10.2 39.1 0.096
P4KE27A 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096
P4KE30 27.0 33.0 1.0 24.3 1.0 9.2 43.5 0.097
P4KE30A 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097
P4KE33 29.7 36.3 1.0 26.8 1.0 8.4 47.7 0.098
P4KE33A 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098
P4KE36 32.4 39.6 1.0 29.1 1.0 7.7 52.0 0.099
P4KE36A 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099
P4KE39 35.1 42.9 1.0 31.6 1.0 7.1 56.4 0.100
P4KE39A 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100
P4KE43 38.7 47.3 1.0 34.8 1.0 6.5 61.9 0.101
P4KE43A 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101
P4KE47 42.3 51.7 1.0 38.1 1.0 5.9 67.8 0.101
P4KE47A 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101
P4KE51 45.9 56.1 1.0 41.3 1.0 5.4 73.5 0.102
P4KE51A 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102
P4KE56 50.4 61.6 1.0 45.4 1.0 5.0 80.5 0.103
P4KE56A 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103
P4KE62 55.8 68.2 1.0 50.2 1.0 4.5 89.0 0.104
P4KE62A 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104
www.vishay.com Document Number 88365
218-Jul-02
P4KE Series
Vishay Semiconductors
for mer ly General Semiconductor
Electrical Characteristics (Con’t.) Ratings at 25°C ambient temperature unless otherwise specified.
Maximum
Breakdown Voltage Reverse Maximum Maximum Maximum
V(BR) at IT(1) Test Stand-off Leakage Peak Pulse Clamping Temperature
(V) Current Voltage at VWM Current Voltage at Coefficient
ITVWM
I
D
(3)
IPPM(2) IPPM of V(BR)
Device Type MIN MAX (mA) (V)
(µA)
(A) VC(V) (% / °C)
P4KE68 61.2 74.8 1.0 55.1 1.0 4.1 98.0 0.104
P4KE68A 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104
P4KE75 67.5 82.5 1.0 60.7 1.0 3.7 108 0.105
P4KE75A 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105
P4KE82 73.8 90.2 1.0 66.4 1.0 3.4 118 0.105
P4KE82A 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105
P4KE91 81.9 100 1.0 73.7 1.0 3.1 131 0.106
P4KE91A 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106
P4KE100 90.0 110 1.0 81.0 1.0 2.8 144 0.106
P4KE100A 95.0 105 1.0 85.5 1.0 2.9 137 0.106
P4KE110 99.0 121 1.0 89.2 1.0 2.5 158 0.107
P4KE110A 105 116 1.0 94.0 1.0 2.6 152 0.107
P4KE120 108 132 1.0 97.2 1.0 2.3 173 0.107
P4KE120A 114 126 1.0 102 1.0 2.4 165 0.107
P4KE130 117 143 1.0 105 1.0 2.1 187 0.107
P4KE130A 124 137 1.0 111 1.0 2.2 179 0.107
P4KE150 135 165 1.0 121 1.0 1.9 215 0.108
P4KE150A 143 158 1.0 128 1.0 1.9 207 0.108
P4KE160 144 176 1.0 130 1.0 1.7 230 0.108
P4KE160A 152 168 1.0 136 1.0 1.8 219 0.108
P4KE170 153 187 1.0 138 1.0 1.6 244 0.108
P4KE170A 162 179 1.0 145 1.0 1.7 234 0.108
P4KE180 162 198 1.0 146 1.0 1.6 258 0.108
P4KE180A 171 189 1.0 154 1.0 1.6 246 0.108
P4KE200 180 220 1.0 162 1.0 1.4 287 0.108
P4KE200A 190 210 1.0 171 1.0 1.5 274 0.108
P4KE220 198 242 1.0 175 1.0 1.2 344 0.108
P4KE220A 209 231 1.0 185 1.0 1.2 328 0.108
P4KE250 225 275 1.0 202 1.0 1.1 360 0.110
P4KE250A 237 263 1.0 214 1.0 1.2 344 0.110
P4KE300 270 330 1.0 243 1.0 0.93 430 0.110
P4KE300A 285 315 1.0 256 1.0 1.0 414 0.110
P4KE350 315 385 1.0 284 1.0 0.79 504 0.110
P4KE350A 333 368 1.0 300 1.0 0.83 482 0.110
P4KE400 360 440 1.0 324 1.0 0.70 574 0.110
P4KE400A 380 420 1.0 342 1.0 0.73 548 0.110
P4KE440 396 484 1.0 356 1.0 0.63 631 0.110
P4KE440A 418 462 1.0 376 1.0 0.66 602 0.110
P4KE480 432 528 1.0 389 1.0 0.58 686 0.110
P4KE480A 456 504 1.0 408 1.0 0.61 658 0.110
P4KE510 459 561 1.0 413 1.0 0.55 729 0.110
P4KE510A 485 535 1.0 434 1.0 0.57 698 0.110
P4KE540 486 594 1.0 437 1.0 0.52 772 0.110
P4KE540A 513 567 1.0 459 1.0 0.54 740 0.110
Notes:
(1) Pulse test: tp ≤50ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) For bidirectional types having VWM of 10 volts and less, the IDlimit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
P4KE Series
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88365 www.vishay.com
18-Jul-02 3
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP)
or Current (IPPM)
Derating in Percentage, %
TA -- Ambient Temperature (°C)
1 5 10 50 100
Fig. 2 – Pulse Derating Curve
IFSM -- Peak Forward
Surge Current (A)
Number of Cycles at 60 Hz
CJ -- Junction Capacitance
10
100
1,000
10,000
1.0 10 100 200
V(BR) -- Breakdown Voltage (V)
10
50
100
200
Fig. 4 – Typ. J unction Capacitance Uni-Directional
0.1µs 1.0µs10µs 100µs 1.0ms 10ms
PPPM -- Peak Pulse Power (kW)
100
10
1
0.1
td -- Pulse Width (sec.)
Fig. 5 – Steady State Power Derating Curve
07525 100 125 150 175 20050
0
0.25
0.50
0.75
1.00
PM(AV), Steady State Power
Dissipation (W)
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
TL -- Lead Temperature (°C)
Fig. 7 – T ypical Re verse Leaka ge Characteristics
ID -- Instantaneous Reverse
Leakage Current (µA)
0.01
0.1
1
10
100
0100 200
V(BR) -- Breakdown Voltage (V)
300 400 500 600
60 HZ Resistive or
Inductive Load
L = 0.375" (9.5mm)
Lead Lengths
Fig. 1 – Peak Pulse Power Rating Curve
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Measured at
Stand-Off
Voltage, VWM
Measured at Zero Bias
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
T ransient Thermal Impedance
(°C/W)
10
100
1
0.001 tp -- Pulse Duration (sec)
0.01 0.1 1 10 100 1000
Fig. 8 – Typ. T ransient Thermal Impedance
Fig. 6 - Max. Non-Repetitive Forwar d Surge Current
Uni-Directional Only
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
td
Fig. 3 -- Pulse Waveform
TJ = 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of IPPM
01.0 2.0 3.0 4.0
t -- Time (ms)
0
50
100
150
IPPM -- Peak Pulse Current,
% IRSM
tr = 10µsec.
Half Value — IPPM
2
10/1000µsec. Waveform
as defined by R.E.A.
Peak Value
IPPM
Measured at Devices
Stand-off Voltage, VWM
TA = 25°C
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
www.vishay.com Document Number 88365
418-Jul-02
P4KE Series
Vishay Semiconductors
for mer ly General Semiconductor
