TDA1551Q - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Preliminary speciﬁcation

File under Integrated Circuits, IC01 July 1994

INTEGRATED CIRCUITS

TDA1551Q

2 x 22 W BTL car radio power

amplifier with diagnostic facility

July 1994 2

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

FEATURES

•Requires very few external components

•Flexible in use - quad, single ended or stereo BTL

•I2C-bus control

•Dynamic distortion detector

•Thermal protection

•Output status information

•Power supply dip detection

•High output power

•MUTE/sleep mode by writing to I2C-bus

•Stand-by mode

•Fixed gain

•Good ripple rejection

•Load dump protection

•AC/DC short circuit safe to ground and VP

•Reverse polarity safe

•Low offset voltage at output

•Capable of handling high energy at outputs (VP= 0 V)

•Electrostatic discharge protection

•No switch-ON/switch-OFF plop

•Flexible leads

•Low thermal resistance

•Identical inputs (inverting and non-inverting).

DESCRIPTION

The TDA1551Q is an integrated class-B output amplifier

encased in a 17-lead single-in-line plastic power package.

The device contains 4 ×11 W single-ended (SE) or 2 ×22

W BTL amplifiers and is intended for use in car radio

applications.

QUICK REFERENCE DATA

ORDERING INFORMATION

Note

1. SOT243-1; 1996 September 06.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VPsupply voltage range operating 6 14.4 18 V

VPsupply voltage non-operating −−30 V

IPtotal quiescent current −80 160 mA

Quad-single-ended application

Pooutput power RL= 4 Ω; THD = 10 % −6−W

RL= 2 Ω; THD = 10 % −11 −W

Vno output voltage noise RS= 0 Ω−50 −µV

Stereo BTL application

Pooutput power RL= 4 Ω; THD = 10 % −22 −W

Vno output voltage noise RS= 0 Ω−70 −µV

∆V

oDC output offset voltage −−100 mV

EXTENDED TYPE

NUMBER PACKAGE

PINS PIN POSITION MATERIAL CODE

TDA1551Q 17 SIL bent to DIL plastic SOT243R(1)

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Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

Fig.1 Block diagram.

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Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

PINNING

SYMBOL PIN DESCRIPTION

−INV1 1 non-inverting input 1

INV1 2 inverting input 1

GND 3 signal ground

VPRR 4 supply voltage ripple rejection

Vp1 5 positive supply voltage 1

OUT1 6 output 1

GND1 7 power ground 1

OUT2 8 output 2

SB 9 standby

OUT3 10 output 3

GND2 11 power ground 2

OUT4 12 output 4

Vp2 13 positive supply voltage 2

INV2 14 inverting input 2

−INV2 15 non-inverting input 2

SCL 16 serial clock line

SDA 17 serial data line

Fig.2 Pin configuration

handbook, halfpage

INV1

SGND

VPRR

OUT1

PGDN1

OUT2

STBY

OUT3

PGND2

OUT4

INV2

NINV2

SCL

SDA

TDA1551Q

MLA007

INV1

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Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

FUNCTIONAL DESCRIPTION

The TDA1551Q contains four identical amplifiers with differential input stages (two inverting and two non-inverting) which

can be used in SE or BTL applications. The gain of each amplifier is fixed at 20 dB for SE and 26 dB for BTL. The device

also contains an I2C-bus facility which operates in the read or write mode.

In the write mode the device can be switched to either the sleep condition (low sleep current of 0.6 mA typ.), the MUTE

condition or the ON condition.

In the read mode an 8-bit status word is available. Data bits D0 to D3 contain status information of each of the 4 outputs.

If the device is switched to the ON or MUTE condition and there is a short-circuit at one or more outputs, the power

transistors will be outside their safe operating area consequently one or more bits of D0 to D3 will be HIGH. Bits D0 to

D3 are LOW when in the normal safe operating area. Bit D4 is normally LOW if one or more channels reaches the clipping

level D4 will go HIGH. Bit D5 is normally LOW, if the crystal temperature reaches 150 °C D5 will go HIGH. After a

power-on reset bit 7 will go HIGH and a dip in the power supply will be noticed. Bit 7 will go LOW after the I2C-bus is

read. When pin 9 is LOW the device will switch OFF and the supply current will be reduced to 0.1 mA (max.).

Fig.3 Thermal equivalent resistance network.

handbook, halfpage

virtual junction

4 K/W

0.8 K/W

0.1 K/W

6 8 10 12

MLA009

July 1994 6

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC134)

QUALITY SPECIFICATION

Electrostatic handling.

THERMAL RESISTANCE

SYMBOL PARAMETER MIN. MAX. UNIT

Supply voltage

VPoperating voltage −18 V

VPnon-operating voltage −30 V

load dump protect −45 V

IOSM non-repetitive peak output current −6A

IORM repetitive peak output current −4A

stg storage temperature range −55 150 °C

Tccrystal temperature −150 °C

VPsc AC/DC short-circuit safe voltage −18 V

energy handling capability at outputs (VP= 0) −200 mJ

VPr reverse polarity −6V

tot total power dissipation −60 W

SYMBOL PINS MIN. MAX. UNIT

Human body model; RS= 1500 Ω; C = 100 pF

Ves 1, 2, 14, 15, 16, and 17 −1.5 +1.5 kV

other −2+2kV

Machine model; RS= 0 Ω; C = 200 pF

Ves 1, 2, 14, 15, 16, and 17 −100 +100 V

other −200 +200 V

SYMBOL PARAMETER THERMAL RESISTANCE

Rth j-c from junction to case (Fig.3) 1.5 K/W

Rth j-a from junction to ambient in free air 40 K/W

July 1994 7

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

DC CHARACTERISTICS

VP= 14.4 V; Tamb = 25°C’ measurements in accordance with Fig.6 unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

VPsupply voltage note 1 6 14.4 18 V

IPquiescent current −80 160 mA

VODC output voltage note 2 −6.9 −V

|∆Vo| DC output offset voltage −−100 mV

MUTE/sleep/standby

VOoutput signal in MUTE position VI(max) = 1 V;

f = 20 Hz to 10 kHz −−2mV

PDC current in sleep condition V9 > 3V −0.6 1 mA

IPDC current in standby condition V9 < 2 V −−0.1 mA

∆VoDC output offset voltage −−100 mV

July 1994 8

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

AC CHARACTERISTICS

VP= 14.4 V; Tamb = 25°C; f = 1 kHz; RL= 4 Ω; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo BTL application (Fig.7)

POoutput power THD = 0.5% 15 17 - W

20 22 - W

POoutput power VP= 13.2V

THD = 0.5% - 12 - W

THD = 10% - 17 - W

THD total harmonic distortion PO= 1 W - 0.05 - %

B power bandwidth THD = 0.5%; PO=−1 dB

with respect to 15 W - 20 -

15000 -Hz

LOW low frequency roll-off at −3 dB; note 3 - 25 - Hz

fHIGH high frequency roll-off at −1 dB 20 - - kHz

Gvclosed loop voltage gain 25 26 27 dB

VPRR supply voltage ripple rejection ON; note 4 48 - - dB

MUTE; note 4 48 - - dB

standby; note 4 80 - - dB

Ziinput impedance 25 30 38 kΩ

Vno noise output voltage ON; RS = 0; note 5 - 70 - µV

ON; RS= 10 kΩ; note 5 - 100 200 µV

MUTE; notes 5 and 6 - 60 - µV

αchannel separation RS= 10 kΩ40 - - dB

∆Gvchannel unbalance −−1dB

dynamic distortion detector

switch level −3.5 −%

Quad single-ended application (Fig.6)

POoutput power THD = 0.5%; note 7 4 5 −W

THD = 10%; note 7 5.5 6 −W

POoutput power RL= 2 Ω

THD = 0.5%; note 7 7.5 8.5 −W

THD = 10%; note 7 10 11 −W

THD total harmonic distortion PO= 1 W −0.05 −%

fLOW low frequency roll-off at −3 dB; note 3 −25 −Hz

fHIGH high frequency roll-off at −1 dB 20 −−kHz

Gvclosed loop voltage gain 19 20 21 dB

VPRR supply voltage ripple rejection ON; note 4 48 −−dB

MUTE; note 4 48 −−dB

stand-by; note 4 80 −−dB

Ziinput impedance 50 60 75 kΩ

Vno noise output voltage ON; RS= 0; note 5 −50 −µV

ON; RS= 10 kΩ; note 5 −70 100 µV

July 1994 9

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

Notes to the characteristics

1. The circuit is DC adjusted at VP= 6 V and AC operating at VP= 8 to 18 V.

2. At 18 V < VP< 30 V the DC output voltage < VP/2.

3. Frequency response externally fixed.

4. Ripple rejection measured at the output with a source impedance of 0 Ωand at frequency of 100 Hz to 10 kHz

(amplitude = 2 V(p-p)).

5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

6. Noise output voltage independent of RS(VI= 0 V).

7. Output power is measured directly at the output pins of the IC.

MUTE; notes 5 and 6 −60 −µV

αchannel separation RS= 10 kΩ40 −−dB

∆Gvchannel unbalance −−1dB

dynamic distortion detector

switch level −3.5 −%

I2C-bus (see I2C-bus protocol)

VIH input voltage HIGH 3 −5.5 V

VIL input voltage LOW −0.3 −1.5 V

IIH input current HIGH V = 5.5 V −10 −10 µA

IIL input current LOW V = GND −10 −10 µA

VOL output voltage LOW IL= 3 mA −−0.4 V

Power-on reset (increasing supply voltage)

VPstart of reset 0.5 −−V

end of reset −−5V

Standby (pin 9)

V9input voltage HIGH 3 −VPV

input voltage LOW −−2V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

July 1994 10

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

I2C-bus protocol

Table 1 WRITE deﬁnition (R/W = LOW)

Notes

1. For test purposes only; I2C-bus is in the ON condition, amplifier is in the stand-by condition.

2. To get into the ON condition without switch-on plops, the device should be switched from the SLEEP condition to the

MUTE condition and then, after a period of 150 ms, to the ON condition.

Bit D0 switches from SLEEP to the ON condition

Bit D1 switches the MUTE condition

MSB DATA LSB Function

D7 D6 D5 D4 D3 D2 D1 D0

00000000SLEEP condition

00000001MUTE condition

00000010not allowed(1)

00000011ON condition(2)

Fig.4 I2C-bus protocol.

S: start condition.

R/W: read/write bit; LOW = write.

ACK: acknowledge, generated by the receiving device.

DATA: see Tables 1 and 3.

P: stop conditions.

handbook, full pagewidth

S 1 1 0 1 1 0 0 ACKD7D6 D5D4 D3D2D1D0ACKPR/W

MLA006

SLAVE ADDRESS DATA

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Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

Table 2 READ deﬁnition (R/W = HIGH)

Notes

1. LOW after reading I2C-bus.

2. HIGH after power-on reset.

3. LOW if crystal temperature < 150°C.

4. HIGH if crystal temperature reaches 150°C.

5. LOW if not clipping.

6. HIGH if one or more channels are clipping.

7. output status information.

If the device is sinewave driven bit D4 will be HIGH if the THD in one or more channels exceeds 3.5%.

Table 3 Fault conditions

If more outputs are in a fault condition (e.g. short-circuit) then more bits, D3 to D0, will be HIGH.

D7(1)(2) D6 D5(3)(4) D4(5)(6) D3(7) D2(7) D2(7) D0(7)

DATA MSB

D3 D2 D1 D0 FUNCTION

0 0 0 0 all output power transistors in the normal

safe operating condition

−−−1 fault condition pin 6

−−1−fault condition pin 8

−1−−fault condition pin 10

1−−−fault condition pin 12

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Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

Fig.5 State diagram.

handbook, full pagewidth

I2C-bus standby

amplifier standby

power-on reset

00 00

amplifier standby

(test only)

ONI2C-bus

amplifier ON

ONI2C-bus

MUTE

amplifier ON

ONI2C-bus

DINI

MLA008

July 1994 13

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

Fig.6 Test circuit quad single-ended.

July 1994 14

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

Fig.7 Test circuit stereo BTL.

July 1994 15

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT243-1

0 5 10 mm

scale

117

non-concave

95-03-11

97-12-16

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

view B: mounting base side

UNIT A e1

A2bpcD

(1) E(1) Z(1)

deD

hLL

mm 17.0

15.5 4.6

4.2 0.75

0.60 0.48

0.38 24.0

23.6 20.0

19.6 10 2.54

0.8

12.2

11.8 1.27

5.08 2.4

1.6

62.00

1.45

2.1

1.8

3.4

3.1 4.3

12.4

11.0

0.4

0.03

July 1994 16

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our

“IC Package Databook”

(order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joint for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (Tstg max). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not

more than 2 mm above it. If the temperature of the

soldering iron bit is less than 300 °C it may remain in

contact for up to 10 seconds. If the bit temperature is

between 300 and 400 °C, contact may be up to 5 seconds.

July 1994 17

Philips Semiconductors Preliminary speciﬁcation

2 x 22 W BTL car radio power ampliﬁer

with diagnostic facility TDA1551Q

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

PURCHASE OF PHILIPS I2C COMPONENTS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Purchase of Philips I2C components conveys a license under the Philips’ I2C patent to use the

components in the I2C system provided the system conforms to the I2C specification defined by

Philips. This specification can be ordered using the code 9398 393 40011.