P4SMA Series www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 W above 91 V) DO-214AC (SMA) * Excellent clamping capability * Very fast response time PRIMARY CHARACTERISTICS * Low incremental surge resistance VWM 5.8 V to 459 V VBR uni-directional 6.45 V to 567 V VBR bi-directional 6.45 V to 231 V PPPM 400 W, 300 W PD 3.3 W * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 IFSM (uni-directional only) 40 A TJ max. 150 C Polarity Uni-directional, bi-directional Package DO-214AC (SMA) DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. P4SMA10CA). Electrical characteristics apply in both directions. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 s waveform SYMBOL (1)(2) (fig. 1) Peak pulse current with a 10/1000 s waveform (1) (fig. 3) Power dissipation on infinite heatsink, TA = 50 C Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range VALUE UNIT PPPM 400 W IPPM See next table A PD 3.3 W IFSM 40 A TJ, TSTG - 65 to + 150 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2, rating is 300 W above 91 V A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 12-Jul-12 Document Number: 89276 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PART NUMBER P4SMA6.8A P4SMA7.5A P4SMA8.2A P4SMA9.1A P4SMA10A P4SMA11A P4SMA12A P4SMA13A P4SMA15A P4SMA16A P4SMA18A P4SMA20A P4SMA22A P4SMA24A P4SMA27A P4SMA30A P4SMA33A P4SMA36A P4SMA39A P4SMA43A P4SMA47A P4SMA51A P4SMA56A P4SMA62A P4SMA68A P4SMA75A P4SMA82A P4SMA91A P4SMA100A P4SMA110A P4SMA120A P4SMA130A P4SMA150A P4SMA160A P4SMA170A P4SMA180A P4SMA200A P4SMA220A P4SMA250A P4SMA300A P4SMA350A P4SMA400A P4SMA440A P4SMA480A P4SMA510A P4SMA540A DEVICE MARKING CODE UNI BI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C - MAXIMUM BREAKDOWN TEST VOLTAGE STAND-OFF REVERSE CURRENT LEAKAGE VBR AT IT (1) VOLTAGE IT AT VWM VWM (V) (mA) MIN. MAX. ID (4) (A) 6.45 7.14 10 5.80 1000 7.13 7.88 10 6.40 500 7.79 8.61 10 7.02 200 8.65 9.55 1.0 7.78 50.0 9.5 10.5 1.0 8.55 10.0 10.5 11.6 1.0 9.40 5.0 11.4 12.6 1.0 10.2 1.0 12.4 13.7 1.0 11.1 1.0 14.3 15.8 1.0 12.8 1.0 15.2 16.8 1.0 13.6 1.0 17.1 18.9 1.0 15.3 1.0 19.0 21.0 1.0 17.1 1.0 20.9 23.1 1.0 18.8 1.0 22.8 25.2 1.0 20.5 1.0 25.7 28.4 1.0 23.1 1.0 28.5 31.5 1.0 25.6 1.0 31.4 34.7 1.0 28.2 1.0 34.2 37.8 1.0 30.8 1.0 37.1 41.0 1.0 33.3 1.0 40.9 45.2 1.0 36.8 1.0 44.7 49.4 1.0 40.2 1.0 48.5 53.6 1.0 43.6 1.0 53.2 58.8 1.0 47.8 1.0 58.9 65.1 1.0 53.0 1.0 64.6 71.4 1.0 58.1 1.0 71.3 78.8 1.0 64.1 1.0 77.9 86.1 1.0 70.1 1.0 86.5 95.5 1.0 77.8 1.0 95.0 105 1.0 85.5 1.0 105 116 1.0 94.0 1.0 114 126 1.0 102 1.0 124 137 1.0 111 1.0 143 158 1.0 128 1.0 152 168 1.0 136 1.0 162 179 1.0 145 1.0 171 189 1.0 154 1.0 190 210 1.0 171 1.0 209 231 1.0 185 1.0 237 263 1.0 214 1.0 285 315 1.0 256 1.0 333 368 1.0 300 1.0 380 420 1.0 342 1.0 418 462 1.0 376 1.0 456 504 1.0 408 1.0 485 535 1.0 434 1.0 513 567 1.0 459 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.2 2.0 1.8 1.7 1.4 1.4 1.3 1.2 1.1 0.90 0.87 0.73 0.62 0.55 0.50 0.46 0.43 0.41 MAXIMUM MAXIMUM CLAMPING TEMPERATURE VOLTAGE OF VBR AT IPPM (%/C) VC (V) 10.5 0.057 11.3 0.061 12.1 0.065 13.4 0.068 14.5 0.073 15.6 0.075 16.7 0.078 18.2 0.081 21.2 0.084 22.5 0.086 25.2 0.089 27.7 0.090 30.6 0.092 33.2 0.090 37.5 0.096 41.4 0.097 45.7 0.098 49.9 0.099 53.9 0.100 59.3 0.101 64.8 0.101 70.1 0.102 77.0 0.103 85.0 0.104 92.0 0.104 104 0.105 113 0.105 125 0.106 137 0.106 152 0.107 165 0.107 179 0.107 207 0.106 219 0.108 234 0.108 246 0.108 274 0.108 328 0.108 344 0.110 414 0.110 482 0.110 548 0.110 602 0.110 658 0.110 698 0.110 740 0.110 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bi-directional types with V 10 V and less, the I limit is doubled R D (5) V = 3.5 V at I = 25 A (uni-directional only) F F Revision: 12-Jul-12 Document Number: 89276 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Thermal resistance, junction to ambient air RJA Thermal resistance, junction to leads VALUE (1) RJL UNIT 120 C/W 30 C/W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE P4SMA6.8A-M3/61 0.064 61T 1800 7" diameter plastic tape and reel P4SMA6.8A-M3/5A 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP 2 IPPM 50 10/1000 s Waveform as defined by R.E.A. td 0 1.0 s 10 s 100 s 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 4.0 10 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % P4SMA6.8A P4SMA91A P4SMA100A P4SMA220A IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 0 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Measured at Stand-Off Voltage VWM 1000 Uni-Directional 100 Bi-Directional 10 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (C) VBR - Breakdown Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Revision: 12-Jul-12 200 Document Number: 89276 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (C/W) 1000 100 10 1 0.001 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0.01 0.1 1 10 100 1000 1 5 10 50 100 tp - Pulse Duration (s) Number of Cycles at 60 Hz Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 12-Jul-12 Document Number: 89276 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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