2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 1 March 1, 2000-08
FEATURES
• Dual Version of SFH610 Series
• High Current Transfer Ratios
ILD610-1, 40-80%
ILD610-2, 63-125%
ILD610-3, 100-200%
ILD610-4, 160-320%
• Isolation Test Voltage, 5300 V
RMS
•
V
CEsat
0.25 (
≤
0.4) V at
I
F
=10 mA,
I
C
=2.5 mA
•
V
CEO
=70 V
• Underwriters Lab File #E52744
• VDE #0884 Available with Option 1
DESCRIPTION
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
configuration instead of the more common alternat-
ing pin-out used in most dual couplers.
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage............................................... 6.0 V
Surge Forward Current (t
≤
10 ms) ................... 1.5 A
Total Power Dissipation............................... 100 mW
Derate Linearly from 25
°
C....................... 1.3 mW/
°
C
DC Forward Current....................................... 60 mA
Detector
Collector-Emitter Voltage................................... 70 V
Collector Current............................................ 50 mA
Collector Current (t
≤
1.0 ms)........................ 100 mA
Total Power Dissipation............................... 150 mW
Derate Linearly from 25
°
C....................... 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.)........... 5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................
≥
10
11
Ω
Storage Temperature .................... –55
°
C to +150
°
C
Operating Temperature................. –55
°
C to +100
°
C
Junction Temperature .....................................100
°
C
Lead Soldering Time at 260
°
C......................10 sec.
V
DE
Electrical Characteristics
T
A
=25
°
C
Symbol Typ. Unit Condition
Emitter
Forward Voltage
V
F
1.25
(
≤
1.65) V
I
F
=60mA
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
O
25 pF
V
R
=0 V
f=1.0 MHz
Detector
Breakdown Voltage BV
CEO
90 (
≥
70) V
I
C
=10 mA
I
E
=10
µ
A
BV
CEO
7.0 (
≥
6.0)
Collector-Emitter Dark
Current
I
CEO
2.0 (
≤
50) nA
V
CE
=10 V
Capacitance
C
CE
7.0 pF
V
CE
=5.0 V
f=1.0 MHz
Package
Collector-Emitter Saturation
Voltage
V
CEsat
0.25
(
≤
0.40) V
I
F
=10 mA
I
C
=2.5 mA
Coupling Capacitance
C
C
0.35 pF —
8
7
6
5
Emitter
Collector
Emitter
Collector
Anode
Cathode
Anode
Cathode
1
2
3
4
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
Dimensions in inches (mm)
ILD610
Dual Phototransistor
Optocoupler
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD610
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 2 March 1, 2000-08
CTR will match within a ratio of 1.7:1
Switching Characteristics
Linear Operation (without saturation)
I
F
=10 mA,
V
CC
=5.0 V, R
C
=75
Ω
, Typical
Switching Operation
(with saturation)
V
CC
=5.0 V, R
C
=1.0
Ω
, Typical
-1 -2 -3 -4
CTR
1
,
I
F
=10 mA,
V
CE
=5.0 V 40-80 63-125 100-200 160-320 %
CTR
1
,
I
F
=1.0 mA,
V
CE
=5.0 V 13 min. 22 min. 34 min. 56 min. %
I
CEO
(
V
CE
=10 V) 2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) 5.0 (
≤
100) nA
-1 -2 -3 -4
Turn on time
t
on
3.0 3.2 3.6 4.1
µ
s
Rise time
t
r
2.0 2.5 2.9 3.3
µ
s
Turn off time
t
off
2.3 2.9 3.4 3.7
µ
s
Fall time
t
f
2.0 2.6 3.1 3.5
µ
s
-1
I
F
= 20 mA -2
I
F
= 10 mA -3
I
F
= 10 mA -4
I
F
= 5.0 mA
Turn on time
t
on
3.0 4.3 4.6 6.0
µ
s
Rise time
t
r
2.0 2.8 3.3 4.6
µ
s
Turn off time
t
off
18 2.9 3.4 25
µ
s
Fall time
t
f
11 2.6 3.1 15
µ
s
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTR at
T
A
=25
°
C versus LED current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°C
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR(SAT)
NCTR
Normalized to:
VCE = 5 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
Figure 3. Normalized non-saturated and saturated
CTR at
T
A
=50
°
C versus LED current
Figure 4. Normalized non-saturated and saturated
CTR at
T
A
=70
°
C versus LED current
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
TA = 50°C
NCTR(SAT)
NCTR
Normalized to:
VCE = 5 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR(SAT)
NCTR
TA = 70°C
Normalized to:
VCE = 5 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD610
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 3 March 1, 2000-08
Figure 9. Switching timing
Figure 10. Non-saturated switching schematic
Figure 11. Saturated switching time test waveform
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
VO
VCC=5 V
RL
F=10 KHz
DF=50%
IF=10 mA
Output
0
10%
50%
90% 90%
50%
10%
ton toff
tpdof
tpdon
tdtr
ts
tr
Input
0
Figure 5. Normalized non-saturated and saturated CTR
at
T
A
=85
°
C versus LED current
Figure 6. Collector-emitter current versus temperature
and LED current
Figure 7. Collector-emitter leakage current versus
temperature
Figure 8. Propagation delay versus collector load resistor
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
TA = 85°C
NCTR(SAT)
NCTR
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
6050403020100
0
5
10
15
20
25
30
35
50°C
70°C
85°C
IF - LED Current - mA
Ice - Collector Current - mA
25°C
-20 0 20 40 60 80 100
105
104
103
102
101
100
10-1
10-2
TA - Ambient Temperature - °C
ICEO - Collector-Emitter - nA
Typical
VCE = 10 V
100101.1
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - KΩ
tpLH - Propagation Delay - µs
tpHL - Propagation Delay - µs
tpLH
tpHL
Ta = 2 5 °C, IF = 10mA
Vcc = 5 V, Vth = 1.5 V
