BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-EmitterVoltage IC Collector Current ICM Collector Peak Current Value BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 COMSET SEMICONDUCTORS Unit 60 80 100 120 140 45 60 80 100 120 V V 8 A 12 A 1/5 BD643/645/647/649/651 Symbol Ratings IB Base Current PT Power Dissipation TJ Ts @ Tmb < 25 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Junction Storage Temperature Value Unit 150 mA 62.5 Watts 150 -65 to +150 C Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings RthJ-MB From junction to mounting base RthJ-A From junction to ambient in free air BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 COMSET SEMICONDUCTORS Value Unit 2 K/W 70 K/W 2/5 BD643/645/647/649/651 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) IE=0,VCB =VCEOMAX ICBO Collector Cutoff Current IE=0,VCB =1/2 VCBOMAX, TJ=150C ICEO IEBO Collector Cutoff Current Emitter Cutoff Current IE=0, VCE =1/2 VCEOMAX VEB=5 V, IC=0 IC=4 A, IB=16 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3 A, IB=12 mA IC=5 A, IB=50 mA VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=120 mA COMSET SEMICONDUCTORS BD644 BD646 BD648 BD650 BD652 Min Typ Mx Unit - - 0.1 mA - - 1 mA - - 0.2 mA - - 5.0 mA - - 2 - BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 - - 2 2 2 2 2.5 2.5 2.5 2.5 BD652 - - 2.5 BD644 BD646 BD648 BD650 BD652 - - 3 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 3/5 V V BD643/645/647/649/651 Symbol Ratings IC=4 A, VCE=3 V VBE Base-Emitter Voltage (*) IC=3 A, VCE=3 V VCE=3.0 V, IC=0.5 A VCE=3.0 V, IC=4 A hFE DC Current Gain (*) VCE=3.0 V, IC=3 A VCE=3.0 V, IC=8 A VCE=3.0 V, IC=4 A, f=1MHz hfe Small Signal Current Gain VCE=3.0 V, IC=3 A, f=1MHz Value BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 750 750 10 10 10 10 10 - 1900 - 1800 - Unit 2.5 2.5 2.5 2.5 2.5 - (*) Pulse Width 300 s, Duty Cycle 2.0% COMSET SEMICONDUCTORS 4/5 V - BD643/645/647/649/651 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate COMSET SEMICONDUCTORS 5/5