DATA SH EET
Preliminary specification
Supersedes data of 1996 Jun 10 1996 Sep 19
DISCRETE SEMICONDUCTORS
BZG04 series
Transient voltage suppressor
diodes
handbook, halfpage
M3D168
1996 Sep 19 2
Philips Semiconductors Preliminary specification
Transient voltage suppressor diodes BZG04 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•UL 94V-O classified plastic
package
•Transient suppressor stand-off
voltage range:
8.2 to 220 V for 32 types
•Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA473
cathode
band
Top view Side view
,,
,,
,,
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PRSM non-repetitive peak reverse power
dissipation 10/1000 µs exponential pulse
(see Fig.4); Tj=25°C prior to
surge; see also Fig.2
−300 W
Tstg storage temperature −65 +175 °C
Tjjunction temperature −65 +175 °C
1996 Sep 19 3
Philips Semiconductors Preliminary specification
Transient voltage suppressor diodes BZG04 series
ELECTRICAL CHARACTERISTICS
Total series
Tj=25°C unless otherwise specified.
Per type
Tj= 25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage IF= 0.5 A; see Fig.3 −1.2 V
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT TEST
CURRENT CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
V(BR)R (V)
at Itest SZ(%/K) at Itest Itest
(mA) V(CL)R (V) at IRSM (A)
note 1 IR(µA) at VR
(V)
MIN. MIN. MAX. MAX. MAX.
BZG04-8V2 9.4 0.05 0.09 50 14.8 20.3 20 8.2
BZG04-9V1 10.4 0.05 0.10 50 15.7 19.1 5 9.1
BZG04-10 11.4 0.05 0.10 50 17.0 17.7 5 10
BZG04-11 12.4 0.05 0.10 50 18.9 15.9 5 11
BZG04-12 13.8 0.05 0.10 50 20.9 14.4 5 12
BZG04-13 15.3 0.06 0.11 25 22.9 13.1 5 13
BZG04-15 16.8 0.06 0.11 25 25.6 11.7 5 15
BZG04-16 18.8 0.06 0.11 25 28.4 10.6 5 16
BZG04-18 20.8 0.06 0.11 25 31.0 9.7 5 18
BZG04-20 22.8 0.06 0.11 25 33.8 8.9 5 20
BZG04-22 25.1 0.06 0.11 25 38.1 7.9 5 22
BZG04-24 28 0.06 0.11 25 42.2 7.1 5 24
BZG04-27 31 0.06 0.11 25 46.2 6.5 5 27
BZG04-30 34 0.06 0.11 10 50.1 6.0 5 30
BZG04-33 37 0.06 0.11 10 54.1 5.5 5 33
BZG04-36 40 0.07 0.12 10 60.7 4.9 5 36
BZG04-39 44 0.07 0.12 10 65.5 4.6 5 39
BZG04-43 48 0.07 0.12 10 70.8 4.2 5 43
BZG04-47 52 0.07 0.12 10 78.6 3.8 5 47
BZG04-51 58 0.08 0.13 10 86.5 3.5 5 51
BZG04-56 64 0.08 0.13 10 94.4 3.2 5 56
BZG04-62 70 0.08 0.13 10 103.5 2.9 5 62
BZG04-68 77 0.08 0.13 10 114 2.6 5 68
BZG04-75 85 0.09 0.13 5 126 2.4 5 75
BZG04-82 94 0.09 0.13 5 139 2.2 5 82
BZG04-91 104 0.09 0.13 5 152 2.0 5 91
BZG04-100 114 0.09 0.13 5 167 1.8 5 100
1996 Sep 19 4
Philips Semiconductors Preliminary specification
Transient voltage suppressor diodes BZG04 series
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8”
(10/1000 µs pulse); see Fig.4.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.
For more information please refer to the
“General Part of associated Handbook”
.
BZG04-110 124 0.09 0.13 5 185 1.6 5 110
BZG04-120 138 0.09 0.13 5 204 1.5 5 120
BZG04-130 153 0.09 0.13 5 224 1.3 5 130
BZG04-150 168 0.09 0.13 5 249 1.2 5 150
BZG04-160 188 0.09 0.13 5 276 1.1 5 160
BZG04-180 208 0.09 0.13 2 305 1.0 5 180
BZG04-200 228 0.09 0.13 2 336 0.9 5 200
BZG04-220 251 0.09 0.13 2 380 0.8 5 220
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 25 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT TEST
CURRENT CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
V(BR)R (V)
at Itest SZ(%/K) at Itest Itest
(mA) V(CL)R (V) at IRSM (A)
note 1 IR(µA) at VR
(V)
MIN. MIN. MAX. MAX. MAX.
1996 Sep 19 5
Philips Semiconductors Preliminary specification
Transient voltage suppressor diodes BZG04 series
GRAPHICAL DATA
Tj=25°C prior to surge.
Fig.2 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
10−2
10
102
103
104
10−11t
p
(ms)
PZSM
(W)
10
MBH452
Tj=25°C.
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
02
3
0
1
2
MBH453
IF
(A)
1VF (V)
Fig.4 Non-repetitive peak reverse current pulse
definition.
In accordance with
“IEC 60-1, Section 8”
.
t1=10µs.
t2= 1000 µs.
handbook, halfpage
MGD521
IRSM
(%)
100
90
50
10
t1
t2
t
Fig.5 Printed-circuit board for surface mounting.
Dimensions in mm.
MSB213
4.5
2.5
1.25
50
50
1996 Sep 19 6
Philips Semiconductors Preliminary specification
Transient voltage suppressor diodes BZG04 series
PACKAGE OUTLINE
Dimensions in mm.
The marking band indicates the cathode.
Fig.6 DO-214AC; SOD106.
handbook, full pagewidth
MSA414
,
,
,
,
4.5
4.3
5.5
5.1
3.3
2.7
2.3
2.0
2.8
2.4 1.6
1.4
0.05
0.2
1996 Sep 19 7
Philips Semiconductors Preliminary specification
Transient voltage suppressor diodes BZG04 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
