© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2 1Publication Order Number:
BC489/D
BC489, A, B
High Current Transistors
NPN Silicon
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 80 Vdc
Collector−Base Voltage VCBO 80 Vdc
Collector−Emitter Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC0.5 Adc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°CPD625
5.0 mW
mW/°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junc tion−to−A m bient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BC489x = Device Code
x = A or B
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
TO−92
CASE 29
STYLE 17
123
(Note: Microdot may be in either location)
http://onsemi.com
BC
489x
AYWW G
G
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
BC489, A, B
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0) V(BR)CEO 80 − − Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 80 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCB = 60 V, IE = 0) ICBO − − 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc) BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE 40
60
100
160
15
−
−
160
260
−
−
400
250
400
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat) −
−0.2
0.3 0.5
−
Vdc
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc) (Note 1)
VBE(sat) −
−0.85
0.9 1.2
−
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) fT− 200 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 7.0 − pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 50 − pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Figure 1. Switching Time Test Circuits
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
5.0 ms
+10 V
0
Vin
5.0 mF100
100
TURN−ON TIME
−1.0 V VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
5.0 ms
Vin
5.0 mF100
100
TURN−OFF TIME
+VBB VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
RBRB
BC489, A, B
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3
Figure 2. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
20070503020107.05.03.02.0
300
200
100
70
50
30
VCE = 2.0 V
TJ = 25°C
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T
C, CAPACITANCE (pF)
t, TIME (ns)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
1005020105.02.01.00.50.20.1
80
60
40
20
10
4.0
TJ = 25°C
Cobo
Cibo
8.0
Figure 4. Switching Time
IC, COLLECTOR CURRENT (mA)
500503020107.05.0
1.0 k
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
700
500
300
200
100
70
50
30
20
10
ts
tf
tr
td @ VBE(off) = 0.5 V
100
6.0
20010070 300
Figure 5. Thermal Response
t, TIME (ms)
1.0
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−469)
TJ(pk) − TC = P(pk) ZqJC(t)
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
ZqJC(t) = r(t) • RqJC
ZqJA(t) = r(t) • RqJA
SINGLE PULSE
BC489, A, B
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4
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0 k
1.0
IC, COLLECTOR CURRENT (mA)
2.0 5.0
Figure 6. Active Region — Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
700
500
300
200
100
70
50
30
20
10
3.0 10 20 50307.0 70 100
BC489
100 ms
1.0 ms
1.0 s
TC = 25°C
TA = 25°C
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
200
100
80
60
40
hFE, DC CURRENT GAIN
TJ =125°C
25°C
−55°C
VCE = 1.0 V
300 500
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0 20020
TJ = 25°C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
5.0 10 50 100
VBE(sat) @ IC/IB = 10
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (VOLT
S
1.0
0.8
0.6
0.4
0.2
0
0.1 101.0
TJ = 25°C
IC = 10 mA
0.05 0.2 0.5 2.0 5.0 20
100 mA 250 mA
50
mA
2.0 500 50
500 mA
BC489, A, B
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5
IC, COLLECTOR CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
−0.8
−2.8
1.0 10010
RqVB for VBE
0.5 2.0 5.0 20 50 200
−1.2
−1.6
−2.0
−2.4
RVB, TEMPERATURE COEFFICIENT (mV/ C)°
θ
500
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
V, VOLTAGE (VOLTS)
−1.0
−0.8
−0.6
−0.4
−0.2
0
TJ = 25°C
VBE(on) @ VCE = −1.0 V
VCE(sat) @ IC/IB = 10
−0.5
VBE(sat) @ IC/IB = 10
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500
IB, BASE CURRENT (mA)
Figure 12. Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−1.0
−0.8
−0.6
−0.4
−0.2
0
−0.1 −10−1.0
TJ = 25°C
IC = −10 mA
−0.05 −0.2 −0.5 −2.0 −5.0 −20
−50 mA
−50
−100 mA −250 mA −500 mA
IC, COLLECTOR CURRENT (mA)
Figure 13. Base−Emitter Temperature Coefficient
−0.8
−2.8
−1.0 −100−10
RqVB for VBE
−0.5 −2.0 −5.0 −20 −50 −200
−1.2
−1.6
−2.0
−2.4
RVB, TEMPERATURE COEFFICIENT (mV/ C)°
θ
−500
ORDERING INFORMATION
Device Order Number Package Type Shipping†
BC489 TO−92 5000 Units / Bulk
BC489G TO−92
(Pb−Free) 5000 Units / Bulk
BC489RL1 TO−92 2000 / Tape & Reel
BC489RL1G TO−92
(Pb−Free) 2000 / Tape & Reel
BC489A TO−92 5000 Units / Bulk
BC489AG TO−92
(Pb−Free) 5000 Units / Bulk
BC489AZL1 TO−92 2000 / Tape & Ammo Box
BC489AZL1G TO−92
(Pb−Free) 2000 / Tape & Ammo Box
BC489BZL1 TO−92 2000 / Tape & Ammo Box
BC489BZL1G TO−92
(Pb−Free) 2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC489, A, B
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
TO−92 (TO−226AA)
CASE 29−11
ISSUE AL
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC489/D
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