International Rectifier HEXFET Power MOSFET PD-9.900 IRF620S Surface Mount Available in Tape & Reel Dynamic dv/di Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Voss = 200V Rosvon) = 0.802 Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. {t provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings SMD-220 Parameter Max. | tits _| {p @ Te = 25C Continuous Drain Current, Ves @ 10 V 5.2 Ip @ Te = 100C | Continuous Drain Current, Ves @ 10 V 88 A Jom _ ____ | Pulsed Drain Current_ 18 Pp @ Tc= 25C Power Dissipation 50 W Pp @ Ta= 25C _| Power Dissipation (PCB Mount)** 3.0 Linear Derating Factor 040 |! | wre _____| Linear Derating Factor (PCB Mount)** | 0.025 Ves Gate-to-Source Voltage +20 V Ess sss Single Pulse Avalanche Energy @ 110 mJ laa Ss Avalanche Current 5.2 1A Ear Repetitive Avalanche Energy | 5.0 | mJ dv/dt Peak Diode Recovery dv/dt_ | 5.0 Vins Ty, Tsta@ Junction and Storage Temperature Range | -55 to +150 C |__| Soldering Temperature, for 10 seconds _| 300 (1.6mm from case) _ Thermal Resistance Parameter [| Min. Typ. Max. Units | | Res ____ {Junction-to-Case fo -- | = | 28 Rosa Junction-to-Ambient (PCB mount)** _ _ 40 7 CAV Rosa Junction-to-Ambient _ | _ 62 | When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 185IRF620S Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. } Units __Test Conditions Vier\pss Drain-to-Source Breakdown Voltage 200 | = Vv Vas=0V, Ip= 250NA AVer)pss/ATy| Breakdown Voltage Temp. Coefficient | 0.29 | | VC | Reference to 25C, Ip= 1mA Rpsion) Static Drain-to-Source On-Resistance = | 0.80; Q | Vaes=10V, lb=3.1A @ | Vesith) Gate Threshold Voltage 2.0 _ 4.0 VV Vps=Ves, lp= 250uA | Ofs . Forward Transconductance 1.5 _ _ S| Vps=50V, lp=3.1A @ | Ipss | Drain-to-Source Leakage Current 26 HA Vps=200V, Ves=OV _ _ 250 Vps=160V, Ves=0V, Ty=125C less Gate-to-Source Forward Leakage = = 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge _ _ 14 [Ip=4.8A Qgs Gate-to-Source Charge | [| 3.0 |} nC | Vpge160V Qoa Gate-to-Drain ("Miller") Charge _ _ 7.9 Vas=10V See Fig. 6 and 13 tavon) Turn-On Delay Time _ 7.2 = Vpp=100V tr Rise Time = 22 = ns | Ip=4.8A tarott) Turn-Off Delay Time _ 19 _ ' Re=18Q te Fall Time _ 13 _ | Rp=20Q_ See Figure 10 Lo Internal Drain Inductance 4.5 Soa2en nH | from package (ee Ls Internal Source Inductance | 75) and center of die contact 8 Ciss Input Capacitance | 260 _ Ves=0V | Coss Output Capacitance | 100 | PF | Vos=25V Crise Reverse Transfer Capacitance _ 30 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 52 MOSFET symbol D (Body Diode) : A showing the Ism Pulsed Source Current _ _ 18 integral reverse @ (Body Diode) p-n junction diode. 8 Vsp | Diode Forward Voltage _ = 1.8 V__ | Tu=25C, Is=5.2A, Vas=0V ter Reverse Recovery Time 150 | 300 | ns | Ty=25C, Ir=4.8A Qh Reverse Recovery Charge | 0.91 | 1.8 | pC |di/dt=100A/is ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by max, junction temperature (See Figure 11) Vpp=50V, starting Ty=25C, L=6.1mH Ra@=25Q, las=5.2A (See Figure 12) Isps5.2A, di/dt<95A/is, VoD<V(BR)DSs, Tys150C @ Pulse width < 300 us; duty cycle <2%. 186ip, Drain Current (Amps) |p, Drain Current (Amps) 20us WIDTH Te = 25C 107 107! 404 Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = 50V 20us PULSE WIDTH Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ros(on). Drain-to-Source On Resistance |p, Drain Current (Amps) (Normalized) IRF620S 20us PULSE WIOTH Te = 150C 407 100 10! Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tco=150C Veg = 10V .0 -60 -40 -, 0 20 40 60 60 190 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 187IRF620S = Cgs + Cgq. Cys SHORTED gd Cas + Ciss Capacitance (pF) Coss Ves, Gate-to-Source Voltage (volts) Css FOR TEST CIRCUIT SEE _FIGURE 13 O 3 6 9g 12 45 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage Ip, Drain Current (Amps) ; = o T y=150C Igp, Reverse Drain Current (Amps) Yes = OV 04 SINGLE PULSE 0. : 0 1. 5 o.42 5 4 2 5 ago 2 5 422 493 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 188IRF620S Ip, Drain Current (Amps) Ro Vps DU.T. A + 7 _~Voo \f1ov Pulse Width < 1s Duty Factor < 0.1% aa Vps 90% "25 50 75 400 125 150 Ves Tc, Case Temperature (C) Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 ~ Oo ms Dp N o 1 wn Cc oO Q a oO x o Eo : 2 . SINGLE PULSE Pot i (THERMA_ RESPONSE) jot ert | NOTES: 4. DUTY FACTOR, D=t1/72 . 2. PEAK Ty=Pom x Ztnjc + Te 10 105 10-4 1074 10-8 O.4 1 10 ty, Rectangular Pulse Duration (seconds) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 189IRF620S Vary tp to obtain Vps > required fas Eas, Single Pulse Energy (mJ) DD = SOV Vps 20 50 75 100 425 150 Starting Ty, Junction Temperature(C) as Ta Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Iq = Ip Charge - Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1507 Appendix C: Part Marking Information See page 1515 International Appendix D: Tape & Reel Information See page 1519 Rectifier 190