C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, and remote warning and triggering applications. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL C106B2 Peak Repetitive Off-State Voltage VDRM, VRRM 200 RMS On-State Current (TC=85C) IT(RMS) C106D2 400 C106M2 600 UNITS V 4.0 A 20 A 1.65 A2s PGM PG(AV) 0.5 W 0.1 W Peak Forward Gate Current (TC=80C) Operating Junction Temperature IGFM TJ 0.2 A -40 to +110 C Storage Temperature -40 to +150 C Thermal Resistance Tstg JC 7.5 C/W Thermal Resistance JA 80 C/W Peak One Cycle Surge Current, t=8.3ms I2t Value for Fusing Peak Gate Power Dissipation (TC=80C) Average Gate Power Dissipation (TC=80C) ITSM I2t ELECTRICAL CHARACTERISTICS: (TJ=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0K IDRM, IRRM Rated VDRM, VRRM, RGK=1.0K, TJ=110C VTM IT=4.0A IGT IGT VGT VGT IH IH VD=6.0V, RL=100 VD=6.0V, RL=100, TJ=-40C VD=6.0V, RL=100 VD=6.0V, RL=100, TJ=-40C VD=12V TYP MAX 10 UNITS A 100 A 2.2 V 200 A 500 A 0.4 0.8 V 0.5 1.0 V 3.0 mA 6.0 mA IH VD=12V, TJ=-40C VD=12V, TJ=110C 2.0 mA IL VD=12V 5.0 mA IL VD=12V, TJ=-40C VD=Rated VDRM, RGK=1.0K, TJ=110C dv/dt 7.0 8.0 mA V/s R1 (23-April 2012) C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS TO-202-2 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R1 (23-April 2012) w w w. c e n t r a l s e m i . c o m