SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo, IN ORDER OF (1} MAX COLLECTOR DISSIPATION TYPE Cob |STRUC|Y200 jE O No. DISS. | fab TURE | s/a |AD @25C T0200/D E NS435 500m |80.M : : : TO18 NS438 500m |80.M : : TO18 2N1444t 500m [100M |4: : : 25 TO29 2SC273 500m |100MA : : : ; 50 . TO18 2SC26 500m |150M 50 NS21 500m |200M . 80 . 18 | MD 172222 500m |250M8 : , 254 , TO0122/P 2N2222Bt 500m |300M8A\3. . . . 50 A , 18 | Ad 280441 500m |400ms |2. : 100ug| 50 3p TOS SE6O20At 500m |400M8 |[5. 5 : . 100 TO105| A 28C425t 500m |500M5 : : 80 NS9713 500m |900Ms |4. : 01 ; X16 . . u 13402 560m . 100n . . 150 R127a |D .im . a C13405 560m : 100n 4.5 |2.0m |350 R127a |D . . . . a C$3403 560m : : 100n@ |4. : 180 . . : a TE4425 560m : 100n : 180 R97a BC100t 590m* |10.M8 |4. : ! 40 , TO5 | Ad om . 4C43 600m : . : 10 50 . R133 |A TF260 600m : : . 10 727002 600m : 50 XT1B 600m 5.9m : 12 m . 28711 600m |5.0M (833u 200m | 20 A1379 20M$A|4.0m : 100u | 100 PT886 30.M |4.0m : , 80 PT897 30.M [4.0m 80 am FTOO4 50MA |2.8m ST162t 50MSA USAF5 11ES035 5OM&A| 13m om $DD420 60.M [4.8m ST152 6OMSA ST155 6OMSA 28C19 7OM&A|4.0m : J 10%| 150m $001220 7O0.M& {4.8m : 15 |6.0md 2SC109t 90.Ms |4.0m om 28C108 100M8A/4.0m em SYMBOLS AND CODES 69 D.A.T.A. EXPLAINED IN INTERPRETER 69