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Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: baredie@micross.com Web: www.micross.com/distribution.aspx
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FEATURES
DIRECTREPLACEMENTFORINTERSILLSID100
REVERSELEAKAGECURRENTIR=0.1pA
REVERSEBREAKDOWNVOLTAGEBVR≥30V
REVERSECAPACITANCECrss=0.75pF
ABSOLUTEMAXIMUMRATINGS(Note1)
@25°C(unlessotherwisenoted)
MaximumTemperatures
StorageTemperature‐65°Cto+200°C
OperatingJunctionTemperature‐55°Cto+150°C
MaximumPowerDissipation
ContinuousPowerDissipation 300mW
MaximumCurrents
ForwardCurrent 20mA
ReverseCurrent100µA
MaximumVoltages
ReverseVoltage30V
DiodetoDiodeVoltage±50V
LSID100ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICSMIN.TYP.MAX.UNITSCONDITIONS
BVRReverseBreakdownVoltage30 ‐‐ ‐‐ VIR=1µA
VFForwardVoltage0.8 ‐‐ 1.1VIF=10mA
IRReverseLeakageCurrent ‐‐ 0.1 ‐‐
pA
VR=1V
‐‐ 2.010VR=10V
|IR1‐IR2|DifferentialLeakageCurrent ‐‐ ‐‐ 3
CrSSTotalReverseCapacitance(Note2) ‐‐ 0.751pFVR=10V,f=1MHz
The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode
LSID100
LOW LEAKAGE
PICO-AMP DUAL DIODE
Available Packages:
LSID100 in TO-78
LSID100 available as bare die
Please contact Micross for
full package and die dimensions
Linear S
y
stems re
p
laces discontinued Intersil LSID100
Note 1 - Absolute maximum ratings are limiting values above which LSID100 serviceability may be impaired.
Note 2 - Design reference only, not 100% tested
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
The LSID100 low-leakage monolithic dual diode
provides a superior alternative to conventional diode
technology when reverse current (leakage) must be
minimized. In addition the monolithic dual construction
allows excellent capacitance matching per diode. The
LSID100 features a leakage current of 0.1 pA and is
well suited for use in applications such as input
protection for operational amplifiers.
LSID100 Benefits:
Negligible Circuit Leakage Contribution
Circuit “Transparent” Except to Shunt
High-Frequency Spikes
Simplicity of Operation
LSID100 Applications:
Op Amp Input Protection
Multiplexer Overvoltage Protection
FIGURE1–OperationalAmplifierProtection
InputDifferentialVoltagelimitedto0.8V(typ)byDiodesLSID100
D1andD2.CommonModeInputvoltagelimitedbyDiodes
LSID100D3andD4to±15V.
FIGURE2–Sample&HoldCircuit
TypicalSampleandHoldcircuitwithclipping.LSID100diodes
reduceoffsetvoltagesfedcapacitivelyfromtheLSID100switch
gate.
TO-78 (Bottom View)
Notepins3&5mustnotbeconnected,in
anyfashionormanner,toanycircuitornode