2N5460
2N5461
2N5462
SILICON
P-CHANNEL JFETS
The CENTRAL SEMICONDUCTOR 2N5460, 2N5461,
and 2N5462 are silicon P-Channel JFETs designed for
low level amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Drain-Gate Voltage VDG 40 V
Reverse Gate-Source Voltage VGSR 40 V
Continuous Gate Current IG 10 mA
Power Dissipation PD 310 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5460 2N5461 2N5462
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
IGSS V
GS=20V - 5.0 - 5.0 - 5.0 nA
IGSS V
GS=20V, TA=100°C - 1.0 - 1.0 - 1.0 A
IDSS V
DS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 4.0 16 mA
BVGSS I
G=10µA 40 - 40 - 40 - V
VGS V
DS=15V, ID=0.1mA 0.5 4.0 - - - - V
VGS V
DS=15V, ID=0.2mA - - 0.8 4.5 - - V
VGS V
DS=15V, ID=0.4mA - - - - 1.5 6.0 V
VGS(OFF) V
DS=15V, ID=1.0A 0.75 6.0 1.0 7.5 1.8 9.0 V
|yfs| V
DS=15V, VGS=0, f=1.0kHz 1.0K 4.0K 1.5K 5.0K 2.0K 6.0K S
|yos| V
DS=15V, VGS=0, f=1.0kHz - 75 - 75 - 75 S
Crss V
DS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 - 2.0 pF
Ciss V
DS=15V, VGS=0, f=1.0MHz - 7.0 - 7.0 - 7.0 pF
eN V
DS=15V, VGS=0, f=100Hz, BW=1.0Hz - 115 - 115 - 115 nV/ Hz
NF VDS=15V, VGS=0, f=100Hz,
R
G=1.0M, BW=1.0Hz - 2.5 - 2.5 - 2.5 dB
TO-92 CASE
R1 (25-January 2016)
www.centralsemi.com
2N5460
2N5461
2N5462
SILICON
P-CHANNEL JFETS
LEAD CODE:
1) Drain
2) Source
3) Gate
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (25-January 2016)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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