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February 2013

FSFR-XS Series • Rev.1.0.2

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

FSFR-XS Series — Fairchild Power Switch (FPS™)

for Half-Bridge Resonant Converters

Features

 Variable Frequency Control with 50% Duty Cycle

for Half-Bridge Resonant Converter Topology

 High Efficiency through Zero Voltage Switching (ZVS)

 Internal UniFET™ with Fast-Recovery Body Diode

 Fixed Dead Time (350 ns) Optimized for MOSFETs

 Up to 300 kHz Operating Frequency

 Auto-Restart Operation for All Protections with

External LVCC

 Protection Functions: Over-Voltage Protection

(OVP), Over-Current Protection (OCP), Abnormal

Over-Current Protection (AOCP), Internal Thermal

Shutdown (TSD)

Applications

 PDP and LCD TVs

 Desktop PCs and Servers

 Adapters

 Telecom Power Supplies

Description

The FSFR-XS series includes highly integrated power

switches designed for high-efficiency half-bridge

resonant converters. Offering everything necessary to

build a reliable and robust resonant converter, the FSFR-

XS series simplifies designs while improving productivity

and performance. The FSFR-XS series combines power

MOSFETs with fast-recovery type body diodes, a high-

side gate-drive circuit, an accurate current controlled

oscillator, frequency limit circuit, soft-start, and built-in

protection functions. The high-side gate-drive circuit has

common-mode noise cancellation capability, which

guarantees stable operation with excellent noise

immunity. The fast-recovery body diode of the MOSFETs

improves reliability against abnormal operation

conditions, while minimizing the effect of reverse

recovery. Using the zero-voltage-switching (ZVS)

technique dramatically reduces the switching losses and

significantly improves efficiency. The ZVS also reduces

the switching noise noticeably, which allows a small-

sized Electromagnetic Interference (EMI) filter.

The FSFR-XS series can be applied to resonant

converter topologies such as series resonant, parallel

resonant, and LLC resonant converters.

Related Resources

AN4151 — Half-Bridge LLC Resonant Converter Design

Using FSFR-Series Fairchild Power Switch (FPSTM)

Ordering Information

Part Number Package Operating

Junction

Temperature RDS(ON_MAX) Maximum Output Power

without Heatsink

(VIN=350~400 V)(1,2)

Maximum Output

Power with Heatsink

(VIN=350~400 V)(1,2)

FSFR2100XS

9-SIP

-40 to +130°C

0.51  180 W 400 W

FSFR1800XS 0.95  120 W 260 W

FSFR1700XS 1.25  100 W 200 W

FSFR1600XS 1.55  80 W 160 W

FSFR2100XSL

9-SIP

L-Forming

0.51  180 W 400 W

FSFR1800XSL 0.95  120 W 260 W

FSFR1700XSL 1.25  100 W 200 W

FSFR1600XSL 1.55  80 W 160 W

Notes:

1. The junction temperature can limit the maximum output power.

2. Maximum practical continuous power in an open-frame design at 50C ambient.

FSFR-XS Series • Rev.1.0.2 2

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Application Circuit Diagram

Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter)

Block Diagram

Figure 2. Internal Block Diagram

FSFR-XS Series • Rev.1.0.2 3

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Pin Configuration

Figure 3. Package Diagram

Pin Definitions

Pin # Name Description

1 VDL This is the drain of the high-side MOSFET, typically connected to the input DC link voltage.

2 AR

This pin is for discharging the external soft-start capacitor when any protections are

triggered. When the voltage of this pin drops to 0.2 V, all protections are reset and the

controller starts to operate again.

3 RT This pin programs the switching frequency. Typically, an opto-coupler is connected to control

the switching frequency for the output voltage regulation.

4 CS

This pin senses the current flowing through the low-side MOSFET. Typically, negative

voltage is applied on this pin.

5 SG This pin is the control ground.

6 PG This pin is the power ground. This pin is connected to the source of the low-side MOSFET.

7 LVCC This pin is the supply voltage of the control IC.

8 NC No connection.

9 HVCC This is the supply voltage of the high-side gate-drive circuit IC.

10 VCTR This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin.

FSFR-XS Series • Rev.1.0.2 4

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In

addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified.

Symbol Parameter Min. Max. Unit

VDS Maximum Drain-to-Source Voltage (VDL-VCTR and VCTR-PG) 500 V

LVCC Low-Side Supply Voltage -0.3 25.0 V

HVCC to VCTR High-Side VCC Pin to Low-Side Drain Voltage -0.3 25.0 V

HVCC High-Side Floating Supply Voltage -0.3 525.0 V

VAR Auto-Restart Pin Input Voltage -0.3 LVCC V

VCS Current-Sense (CS) Pin Input Voltage -5.0 1.0 V

VRT R

T Pin Input Voltage -0.3 5.0 V

dVCTR/dt Allowable Low-Side MOSFET Drain Voltage Slew Rate 50 V/ns

PD Total Power Dissipation(3)

FSFR2100XS/L 12.0

FSFR1800XS/L 11.7

FSFR1700XS/L 11.6

FSFR1600XS/L 11.5

TJ Maximum Junction Temperature(4) +150

C

Recommended Operating Junction Temperature(4) -40 +130

TSTG Storage Temperature Range -55 +150 C

MOSFET Section

VDGR Drain Gate Voltage (RGS=1 M) 500 V

VGS Gate Source (GND) Voltage ±30 V

IDM Drain Current Pulsed(5)

FSFR2100XS/L 32

FSFR1800XS/L 23

FSFR1700XS/L 20

FSFR1600XS/L 18

ID Continuous Drain Current

FSFR2100XS/L TC=25C 10.5

TC=100C 6.5

FSFR1800XS/L TC=25C 7.0

TC=100C 4.5

FSFR1700XS/L TC=25C 6.0

TC=100C 3.9

FSFR1600XS/L TC=25C 4.5

TC=100C 2.7

Package Section

Torque Recommended Screw Torque 5~7 kgf·cm

Notes:

3. Per MOSFET when both MOSFETs are conducting.

4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

5. Pulse width is limited by maximum junction temperature.

FSFR-XS Series • Rev.1.0.2 5

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Thermal Impedance

TA=25C unless otherwise specified.

Symbol Parameter Value Unit

θJC Junction-to-Case Center Thermal Impedance

(Both MOSFETs Conducting)

FSFR2100XS/L 10.44

ºC/W

FSFR1800XS/L 10.68

FSFR1700XS/L 10.79

FSFR1600XS/L 10.89

θJA Junction-to-Ambient Thermal Impedance FSFR XS Series 80 ºC/W

Electrical Characteristics

TA=25C unless otherwise specified.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

MOSFET Section

BVDSS Drain-to-Source Breakdown Voltage

ID=200 μA, TA=25C 500

ID=200 μA, TA=125C 540

RDS(ON) On-State Resistance

FSFR2100XS/L VGS=10 V, ID=6.0 A 0.41 0.51



FSFR1800XS/L VGS=10 V, ID=3.0 A 0.77 0.95

FSFR1700XS/L VGS=10 V, ID=2.0 A 1.00 1.25

FSFR1600XS/L VGS=10 V, ID=2.25 A 1.25 1.55

trr Body Diode Reverse

Recovery Time(6)

FSFR2100XS/L VGS=0 V, IDiode=10.5 A,

dIDiode/dt=100A/μs 120

FSFR1800XS/L VGS=0V, IDiode=7.0A,

dIDiode/dt=100 A/μs 160

FSFR1700XS/L VGS=0 V, IDiode=6.0 A,

dIDiode/dt=100 A/μs 160

FSFR1600XS/L VGS=0 V, IDiode=4.5 A,

dIDiode/dt=100 A/μs 90

CISS Input Capacitance(6)

FSFR2100XS/L

VDS=25 V, VGS=0 V,

f=1.0 MHz

1175 pF

FSFR1800XS/L 639 pF

FSFR1700XS/L 512 pF

FSFR1600XS/L 412 pF

COSS Output Capacitance(6)

FSFR2100XS/L

VDS=25 V, VGS=0 V,

f=1.0 MHz

155 pF

FSFR1800XS/L 82.1 pF

FSFR1700XS/L 66.5 pF

FSFR1600XS/L 52.7 pF

Continued on the following page…

FSFR-XS Series • Rev.1.0.2 6

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Electrical Characteristics (Continued)

TA=25C unless otherwise specified.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Supply Section

ILK Offset Supply Leakage Current HVCC=VCTR=500 V 50 μA

IQHVCC Quiescent HVCC Supply Current (HVCCUV+) - 0.1 V 50 120 μA

IQLVCC Quiescent LVCC Supply Current (LVCCUV+) - 0.1 V 100 200 μA

IOHVCC Operating HVCC Supply Current

(RMS Value)

fOSC=100 KHz 6 9 mA

No Switching 100 200 μA

IOLVCC Operating LVCC Supply Current

(RMS Value)

fOSC=100 KHz 7 11 mA

No Switching 2 4 mA

UVLO Section

LVCCUV+ LVCC Supply Under-Voltage Positive Going Threshold (LVCC Start) 11.2 12.5 13.8 V

LVCCUV- LVCC Supply Under-Voltage Negative Going Threshold (LVCC Stop) 8.9 10.0 11.1 V

LVCCUVH LVCC Supply Under-Voltage Hysteresis 2.50 V

HVCCUV+ HVCC Supply Under-Voltage Positive Going Threshold (HVCC Start) 8.2 9.2 10.2 V

HVCCUV- HVCC Supply Under-Voltage Negative Going Threshold (HVCC Stop) 7.8 8.7 9.6 V

HVCCUVH HVCC Supply Under-Voltage Hysteresis 0.5 V

Oscillator & Feedback Section

VRT V-I Converter Threshold Voltage

RT=5.2 K

1.5 2.0 2.5 V

fOSC Output Oscillation Frequency 94 100 106 KHz

DC Output Duty Cycle 48 50 52 %

fSS Internal Soft-Start Initial Frequency fSS=fOSC+40 kHz, RT=5.2 K 140 KHz

tSS Internal Soft-Start Time 2 3 4 ms

Protection Section

VCssH Beginning Voltage to Discharge CSS 0.9 1.0 1.1 V

VCssL Beginning Voltage to Charge CSS and

Restart 0.16 0.20 0.24 V

VOVP LVCC Over-Voltage Protection LVCC > 21 V 21 23 25 V

VAOCP AOCP Threshold Voltage -1.0 -0.9 -0.8 V

tBAO AOCP Blanking Time(6) V

CS < VAOCP 50 ns

VOCP OCP Threshold Voltage -0.64 -0.58 -0.52 V

tBO OCP Blanking Time(6) V

CS < VOCP 1.0 1.5 2.0 μs

tDA Delay Time (Low Side) Detecting from VAOCP to Switch Off(6) 250 400 ns

TSD Thermal Shutdown Temperature(6) 120 135 150 C

Dead-Time Control Section

DT Dead Time(7) 350 ns

Notes:

6. This parameter, although guaranteed, is not tested in production.

7. These parameters, although guaranteed, are tested only in EDS (wafer test) process.

FSFR-XS Series • Rev.1.0.2 7

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Typical Performance Characteristics

These characteristic graphs are normalized at TA=25°C.

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

Temp (

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Normalized at 25

Figure 4. Low-Side MOSFET Duty Cycle

vs. Temperature Figure 5. Switching Frequency vs. Temperature

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

Figure 6. High-Side VCC (H

CC) Start vs. Temperature Figure 7. High-Side VCC (H

CC) Stop vs. Temperature

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

Figure 8. Low-Side VCC (L

CC) Start vs. Temperature Figure 9. Low-Side VCC (L

CC) Stop vs. Temperature

FSFR-XS Series • Rev.1.0.2 8

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Typical Performance Characteristics (Continued)

These characteristic graphs are normalized at TA=25°C.

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalized at 25

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Norm alized at 25

Figure 10. LVCC OVP Voltage vs. Temperature Figure 11. RT

oltage vs. Temperature

0.9

0.95

1.05

1.1

-50-25 0 255075100

Normalized at 25℃

Temp(℃)

0.9

0.95

1.05

1.1

-50-25 0 255075100

Normalized at 25℃

Temp(℃)

Figure 12.

CssL vs. T emperatu re Figure 13.

CssH vs. Temperature

0.9

0.95

1.05

1.1

-50 -25 0 25 50 75 100

Temp (

Normalize d at 25

Figure 14. OCP Voltage vs. Temperature

FSFR-XS Series • Rev.1.0.2 9

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

Functional Description

1. Basic Operation. FSFR-XS series is designed to

drive high-side and low-side MOSFETs complementarily

with 50% duty cycle. A fixed dead time of 350 ns is

introduced between consecutive transitions, as shown in

Figure 15.

Figure 15. MOSFETs Gate Dri ve Signal

2. Internal Oscillator: FSFR-XS series employs a

current-controlled oscillator, as shown in Figure 16.

Internally, the voltage of RT pin is regulated at 2 V and

the charging / discharging current for the oscillator

capacitor, CT, is obtained by copying the current flowing

out of the RT pin (ICTC) using a current mirror. Therefore,

the switching frequency increases as ICTC increases.

Figure 16. Current-Controlled Oscillator

3. Frequency Setting: Figure 17 shows the typical

voltage gain curve of a resonant converter, where the

gain is inversely proportional to the switching frequency

in the ZVS region. The output voltage can be regulated

by modulating the switching frequency. Figure 18 shows

the typical circuit configuration for the RT pin, where the

opto-coupler transistor is connected to the RT pin to

modulate the switching frequency.

The minimum switching frequency is determined as:

min

5.2 100( )

kHz



 (1)

Assuming the saturation voltage of opto-coupler

transistor is 0.2 V, the maximum switching frequency is

determined as:

max

min max

5.2 4.68

()100()

kHz



  (2)

Figure 17. Resonant Converter Typical Gain Curve

Figure 18. Frequency Control Circuit

To prevent excessive inrush current and overshoot of

output voltage during startup, increase the voltage gain

of the resonant converter progressively. Since the

voltage gain of the resonant converter is inversely

proportional to the switching frequency, the soft-start is

implemented by sweeping down the switching frequency

from an initial high frequency (fISS) until the output

voltage is established. The soft-start circuit is made by

connecting R-C series network on the RT pin, as shown

in Figure 18. FSFR-XS series also has a 3ms internal

soft-start to reduce the current overshoot during the initial

cycles, which adds 40 kHz to the initial frequency of the

external soft-start circuit, as shown in Figure 19. The

initial frequency of the soft-start is given as:

min

5.2 5.2

( ) 100 40 ( )

ISS

kHz



 (3)

FSFR-XS Series • Rev.1.0.2 10

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

It is typical to set the initial frequency of soft-start two to

three times the resonant frequency (fO) of the resonant

network. The soft-start time is three to four times the RC

time constant. The RC time constant is:

SSSS CR  (4)

Figure 19. Frequency Sweeping of Soft-Start

4. Self Auto-Restart: The FSFR-XS series can restart

automatically even though any built-in protections are

triggered with external supply voltage. As can be seen in

Figure 20 and Figure 21, once any protections are

triggered, the M1 switch turns on and the V-I converter is

disabled. CSS starts to discharge until VCss across CSS

drops to VCssL. Then, all protections are reset, M1 turns

off, and the V-I converter resumes at the same time. The

FSFR-XS starts switching again with soft-start. If the

protections occur while VCss is under VCssL and VCssH

level, the switching is terminated immediately, VCss

continues to increase until reaching VCssH, then CSS is

discharged by M1.

Figure 20. Internal Block of AR Pin

After protections trigger, FSFR-XS is disabled during the

stop-time, tstop, where VCss decreases and reaches to

VCssL. The stop-time of FSFR-XS can be estimated as:



 kRRCt MINSSSSSTOP 5|| (5)

The soft-start time, ts/s can be set as Equation (4).

Figure 21. Self Auto-Restart Operation

5. Protection Circuits: The FSFR-XS series has several

self-protective functions, such as Over-Current Protection

(OCP), Abnormal Over-Current Protection (AOCP), Over-

Voltage Protection (OVP), and Thermal Shutdown (TSD).

These protections are auto-restart mode protections, as

shown in Figure 22.

Once a fault condition is detected, switching is terminated

and the MOSFETs remain off. When LVCC falls to the LVCC

stop voltage of 10 V or AR signal is HIGH, the protection is

reset. The FSFR-XS resumes normal operation when

LVCC reaches the start voltage of 12.5 V.

Figure 22. Protection Blocks

5.1 Over-Current Protection (OCP): When the

sensing pin voltage drops below -0.58 V, OCP is

triggered and the MOSFETs remain off. This protection

has a shutdown time delay of 1.5 µs to prevent

premature shutdown during startup.

5.2 Abnormal Over-Current Protection (AOCP): If

the secondary rectifier diodes are shorted, large

current with extremely high di/dt can flow through the

MOSFET before OCP is triggered. AOCP is triggered

without shutdown delay if the sensing pin voltage

drops below -0.9 V.

stop

S/S

CssH

(a) (a)(a)(b) (b)

(a) Protections are trigge red, (b)F SF R-U S restarts

CssL

(b)

FSFR-XS Series • Rev.1.0.2 11

FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

5.3 Over-Voltage Protection (OVP): When the LVCC

reaches 23 V, OVP is triggered. This protection is used

when auxiliary winding of the transformer to supply VCC

to the FPS™ is utilized.

5.4 Thermal Shutdown (TSD): The MOSFETs and

the control IC in one package makes it easier for the

control IC to detect the abnormal over-temperature of

the MOSFETs. If the temperature exceeds

approximately 130C, thermal shutdown triggers.

6. Current Sensing Using a Resistor: FSFR-XS series

senses drain current as a negative voltage, as shown in

Figure 23 and Figure 24. Half-wave sensing allows low

power dissipation in the sensing resistor, while full-wave

sensing has less switching noise in the sensing signal.

Figure 23. Half-Wave Sensing

Figure 24. Full-Wave Sensing

7. PCB Layout Guidelines: Duty imbalance problems

may occur due to the radiated noise from the main

transformer, the inequality of the secondary side leakage

inductances of main transformer, and so on. This is one

of the reasons that the control components in the vicinity

of RT pin are enclosed by the primary current flow pattern

on PCB layout. The direction of the magnetic field on the

components caused by the primary current flow is

changed when the high- and low-side MOSFET turn on

by turns. The magnetic fields with opposite directions

induce a current through, into, or out of the RT pin, which

makes the turn-on duration of each MOSFET different. It

is strongly recommended to separate the control

components in the vicinity of RT pin from the primary

current flow pattern on PCB layout. Figure 25 shows an

example for the duty-balanced case.

Figure 25. Example for Du ty Balan cin g

Control

SG PG

Np Ns

Rsense

Ids

VCS

Control

SG PG

Rsense

Ids

VCS

Ids

VCS

Np Ns

23.10

22.90

26.20

25.80

0.70

5.35

5.15

10.70

10.30

3.20

8.00

7.00 5.08

0.70

0.50

15.24

1.30

MAX

0.80

MAX

2.54

1.27

(5X)

2.54

3.81

0.50 3.40

3.00

1.20

3.40

3.00

0.50

(4X)

18.50

17.50

3.48

2.88

0.60

0.40

0.55

6.00

1.50

12.00

14.50

13.50

1.40

1.00

NOTES: UNLESS OTHERWISE SPECIFIED

A. THIS PACKAGE DOES NOT COMPLY TO

ANY CURRENT PACKAGING STANDARD.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

D. DRAWING FILE NAME: MOD09ACREV3

1 9 2,4,6,8 1,3,5,7,9

RIGHT SIDE VIEW

BOTTOM VIEW

FRONT VIEW

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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative