Order this document by MPS6560/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 25 Vdc Collector - Base Voltage VCBO 25 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 C/mW RqJC 83.3 C/mW Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) V(BR)CEO 25 -- Vdc Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 25 -- Vdc Emitter - Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 -- Vdc Collector Cutoff Current (VCE = 25 Vdc, IB = 0) ICES -- 100 nAdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 100 nAdc Emitter Cutoff Current (VEB(off) = 4.0 Vdc, IC = 0) IEBO -- 100 nAdc Characteristic OFF CHARACTERISTICS 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. v v REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS6560 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 35 50 50 -- -- 200 Unit ON CHARACTERISTICS(2) DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) hFE -- Collector - Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) -- 0.5 Vdc Base - Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) -- 1.2 Vdc fT 60 -- MHz Cobo -- 30 pF SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 2 v 300 ms; Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS6560 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 MPS6560 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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