SAMSUNG SEMICONDUCTOR INC (a4e 0 ff zseunv2 ooozz200.4 Jf 29-27 MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T,=25C) ~ Characteristic Symbol Rating Unit Collector-Base Voltage Vesa 30 Vv Collector-Emitter Voltage Vees . 30 Vv Emitter-Base Voltage Veso 10 V Collector Current le 300 mA Collector Dissipation Pe 350 mw Storage Temperature Tstg 150 C Refer to MMBT6427 for graphs 4 1, Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition Min Max Unit Collector-Emitter Breakdown Voltage | !3 ces lc=100HA, Ig =0 30 v Collector Cutoff Current leno Ves=30V, k=O 100 nA Emitter Cutoff Current leso Ven=10V, lc=0 , 100 nA OC Current Gain Dre Vce=5V, lo=10MA 5,000 Vce=5V, loe=100MA 10,000 Collector-Emitter Saturation Voltage Vee (sat) | i=100mA, Ip=0 1mMA . 1.5 Vv Base-Emitter On Voltage Vee te=100mA, Vce=5V 2.0 Vv Current Gain-Bandwidth Product fr lc=10mA, Vce=5V 425 MHz f=100MHz Marking eS .. 1M Kd a SAMSUNG SEMICONDUCTOR 560