Features
■ High-speed switching
■ Surge withstand
■ RoHS compliant*
Applications
■ Personal Digital Assistants (PDAs)
■ Mobile phones and accessories
■ Memory card protection
■ SIM card port protection
■ Portable electronics
Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
CDSOT23-S2004 - Switching Diode Array
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
General Information
The Bourns® Model CDSOT23-S2004 device is a high-speed switching diode array
offering a Working Peak Reverse Voltage of 240 V and a Minimum Breakdown Voltage
of 300 V. The SOT23 packaged device will mount directly onto the industry standard
SOT23 footprint. Bourns® Chip Diodes conform to JEDEC standards, are easy to
handle with standard pick and place equipment and their fl at confi guration minimizes
roll away.
Parameter Symbol CDSOT23-S2004 Unit
Peak Repetitive Peak Reverse Voltage VRRM 300 V
Working Peak Reverse Voltage VRWM 240 V
DC Blocking Voltage VR240 V
RMS Reverse Voltage VR (RMS) 170 V
Forward Continuous Current (Note 2) IFM 225 mA
Peak Repetitive Forward Current (Note 2) IFRM 625 mA
Peak Forward Surge Current
@ t = 1.0 µs
@ t = 1.0 s
IFSM 4.0
1.0
A
Power Dissipation (Note 2) PD350 mW
Storage Temperature TSTG -55 to +150 °C
Operating Temperature TOPR -55 to +150 °C
3
12
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage (Note 1)
@ IR = 100 µA VBR 300 V
Reverse Leakage Current (Note 1)
@ VR = 240 V IR100 nA
Forward Voltage
@ IF = 20 mA
@ IF = 100 mA
VF0.50
0.75
0.87
1.00
V
Diode Capacitance @ VR = 0 V, f = 1 MHz CT 35pF
Thermal Resistance, Junction to Ambient
(Note 2) RθJA 357 °C/W
Reverse Recovery Time
@ IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω trr 50 ns
*RoHS COMPLIANT
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
CDSOT23-S2004 - Switching Diode Array
Product Dimensions
This is an RoHS compliant molded JEDEC SOT23 package with
100 % Matte Sn on the lead frame. It weighs approximately 8 mg
and has a fl ammability rating of UL 94V-0.
Recommended Footprint
How to Order
CD SOT23 - S 2004
Common Diode
Chip Diode
Package
SOT23 = SOT23 Package
Model
S = Switching Diode
Working Peak Reverse Voltage
2004 = 240 VRWM (Volts)
Typical Part Marking
CDSOT23-S2004 .......................................................................... S6
12
3
B
CD
I
J
G
E
F
H
A
MILLIMETERS
(INCHES)
DIMENSIONS =
Dimensions
A2.80 - 3.04
(0.1102 - 0.1197)
B0.89 - 1.02
(0.0350 - 0.0401)
C1.20 - 1.40
(0.0472 - 0.0551)
D2.10 - 2.50
(0.0830 - 0.0984)
E1.78 - 2.04
(0.0701 - 0.0807)
F0.45 - 0.60
(0.0177 - 0.0236)
G0.89 - 1.11
(0.035 - 0.044)
H0.34 - 0.50
(0.0150 - 0.0200)
I0.45 - 0.60
(0.0180 - 0.0236)
J0.085 - 0.177
(0.0034 - 0.0070)
A B
C
E
D
MILLIMETERS
(INCHES)
DIMENSIONS =
Dimensions
A0.95
(0.037)
B0.95
(0.037)
C2.00
(0.079)
D0.85
(0.033)
E0.85
(0.033)
0.0
0.1
1.0
10.0
100.0
1000.0
Forward Current (mA)
400
450
500
250
300
350
100
150
200
0
50
IR (μA)
Forward Voltage (V)
0.8
0.0010
0.0100
0.1000
1.000
10.0000
100.0000
1,000.0000
0.001
Reverse Current (μA)
Reverse Voltage (V)
1 51 101 151 201 251
0.60.40.20.0 1.0 1.2 1.4
VZ (V)
4003002001000 500
+50 °C
+25 °C
-25 °C
-40 °C
+150 °C
+125 °C
+100 °C
+75 °C
+50 °C
+25 °C
-25 °C
-40 °C
+150 °C
+125 °C
+100 °C
+75 °C
+50 °C
+25 °C
-25 °C
-40 °C
+150 °C
+125 °C
+100 °C
+75 °C
2.0
1.6
1.2
0.8
0.4
0.0
0 25 50 75 100 125 150 175
Capacitance of Diodes (pF)
0.4
0.3
0.2
0.1
0.0
IF (A)
Ta (°C)
0 5 10 15 20 25 30 35
Reverse Voltage (V)
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
CDSOT23-S2004 - Switching Diode Array
Performance Graphs
Forward Current Characteristics Reverse Current Characteristics
Reverse Voltage Characteristics Power Derating Curve
Typical Capacitance
.......
.......
....... ..............
....... ..............
T
120 °
D2
DD
1
W1
C
10 pitches (min.)
Direction of Feed
10 pitches (min.)
End
Trailer Device Leader
Start
PA
F
E
Index
Hole
P
0
P
1
W
B
d
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
CDSOT23-S2004 - Switching Diode Array
Packaging Information
The product is packaged in a 12 mm x 8 mm tape and reel format per EIA-481-A standard.
REV. 06/11
DIMENSIONS: MM
(INCHES)
Item Symbol SOT23
Carrier Width A 2.25 ± 0.10
(0.088 ± 0.004)
Carrier Length B 2.34 ± 0.10
(0.092 ± 0.004)
Carrier Depth C 1.22 ± 0.10
(0.048 ± 0.004)
Sprocket Hole d 1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter D 178
(7.008)
Reel Inner Diameter D1 50.0
(1.969) MIN.
Feed Hole Diameter D2 13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position E 1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position F 3.50 ± 0.05
(0.138 ± 0.002)
Punch Hole Pitch P 4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch P0 4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center P1 2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness T 0.20 ± 0.10
(0.008 ± 0.004)
Tape Width W 8.00 ± 0.20
(0.315 ± 0.008)
Reel Width W114.4
(0.567) MAX.
Quantity per Reel -- 3,000
Asia-Pacifi c:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555
Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
