Discrete POWER & Signal
Technologies
High Conductance Low Leakage Diode
Sourced from Process 1L.
MMBD1501/A / 1503/A / 1504/A / 1505/A
N
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
MARKING
MMBD1501 11 MMBD1501A A11
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
3
12
11
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol Parameter Value Units
WIV Worki ng Invers e V oltage 1 80 V
IOAverage Rectified Current 200 mA
IFDC Forward Curre nt 600 mA
ifRecurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
2.0 A
A
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
Symbol Characteristic Max Units
MMBD 1501/A / 1503- 1505/ A*
PDTota l De vice Di ssip atio n
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
CONNECTION DI AGRAMS
3
21
3
21
3
21
3
12 NC
1501
1504 1505
1503
SOT-23
3
1
2
MMBD1501/A / 1503/A / 1504/A / 1505/A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Un its
BVBr eak down V olt age IR = 5.0 µA200 V
IRReverse Current VR = 1 25 V
VR = 125 V, TA = 150 °C
VR = 180 V
VR = 180 V, TA = 150 °C
1.0
3.0
10
5.0
nA
µA
nA
µA
VFForward Voltage IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 2 00 m A
IF = 3 00 m A
620
720
800
830
0.87
0.9
720
830
890
930
1.1
1.15
mV
mV
mV
mV
V
V
CODiode Capacitance VR = 0, f = 1. 0 M Hz 4. 0 pF
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 3.0 to 100 uA
3 5 10 20 30 50 100
250
275
300
325
I - REVE RSE CURRENT (uA)
V - R EVERSE VOLTAGE (V)
R
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Volts
GEN ER AL RULE: The Reverse C ur rent of a diode wil l appr oxim ately
double for ever y ten (10) D egree C increase in Temperature
130 150 170 190
0
1
2
3
V - R EVER SE VO LTAGE ( V)
I - REVERS E CURRENT (n A)
R
R
Ta= 25°C
205
FORW ARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
1 2 3 5 10 20 30 50 100
350
400
450
500
550
I - F O RWARD CURRENT (u A)
V - F ORW ARD VOLTAG E (mV )
F
F
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 t o 10 m A
0.1 0.2 0.3 0.5 1 2 3 5 10
500
550
600
650
700
750
800
I - F O RWARD CURRE NT (mA)
V - FORWA RD VOLT AGE (mV)
F
F
T a= 25°C
VF
VF
MMBD1501/A / 1503/A / 1504/A / 1505/A
High Conductance Low Leakage Diode
(continued)
Typical Characteristics (continued)
Average Recti fi ed C urrent (I o) &
F o rward C u rr e nt ( I ) ve rs us
Am bient Temperat ure (T )
050100150
0
100
200
300
400
500
T - AMBI ENT TEMPERATURE ( C)
I - CURRENT (mA)
A
A
I - FORWARD CURRENT STEADY STATE - mA
o
R
F
Io - AVERAGE RECTIFIE D CURRENT - mA
CAPACI TANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
0 2 4 6 8 10 12 14
1
1.5
2
2.5
3
3.5
4
REVER SE VOLTAGE (V)
CAPACITANCE (pF)
Ta= 25°C
15
POWER DERATI NG CURVE
0 50 100 150 200
0
100
200
300
400
500
I - AVE RAG E TEM PERATURE ( C)
P - POWER DISS IPATION (mW)
O
D
o
DO - 35 Pkg
SOT-23 Pk g
FORW ARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
10 20 30 50 100 200 300 500
0.8
0.9
1
1.1
1.2
I - F O RWARD CURRENT (mA)
V - F ORW ARD VOLTAG E (V)
F
F
Ta= 25°C
IF
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
