1
Bulletin I2115 rev. D 12/98
PHASE CONTROL SCR
SAFE
IR
Series
16TTS..
VT< 1.4V @ 10A
ITSM = 200A
V
RRM = 800 to 1600V
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Description/Features
The 16TTS.. SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Major Ratings and Characteristics
TO-220AC
Capacitive input filter TA = 55°C, TJ = 125°C, 13.5 17 A
common heatsink of 1°C/W
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
IT(AV) Sinusoidal 10 A
waveform
IRMS 16 A
VRRM/
VDRM up to 1600 V
ITSM 200 A
VT@ 10 A, TJ = 25°C 1.4 V
dv/dt 500 V/µs
di/dt 150 A/µs
TJrange - 40 to 125 °C
Characteristics 16TTS.. Units
Also available in SMD-220 package (series 16TTS..S)
Package Outline
2
16TTS.. SAFE
IR
Series
Bulletin I2115 rev. D 12/98
www.irf.com
VRRM, maximum VDRM , maximum IRRM/IDRM
peak reverse voltage peak direct voltage 125°C
VVmA
16TTS08 800 800 10
16TTS12 1200 1200
16TTS16 1600 1600
Part Number
V oltage Ratings
IT(AV) Max. Average On-state Current 10 A @ TC = 98° C, 180° conduction half sine wave
IRMS Max. RMS On-state Current 16
ITSM Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated VRRM applied
Surge Current 200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 144 A2s 10ms Sine pulse, rated VRRM applied
200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 2000 A2s t = 0.1 to 10ms, no voltage reapplied
VTM Max. On-state Voltage Drop 1.4 V @ 10A, TJ = 25°C
rtOn-state slope resistance 24.0 mTJ = 125°C
VT(TO) Threshold Voltage 1.1 V
IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 10 TJ = 125 °C
IHHolding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A
-- 100 mA 16TTS08, 16TTS12
100 150 16TTS16
IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs
di/dt Max. Rate of Rise of turned-on Current 150 A/µs
Absolute Maximum Ratings
Parameters 16TTS.. Units Conditions
VR = rated VRRM/ VDRM
3
16TTS.. SAFE
IR
Series
Bulletin I2115 rev. D 12/98
www.irf.com
Triggering
PGM Max. peak Gate Power 8.0 W
PG(AV) Max. average Gate Power 2.0
+ IGM Max. paek positive Gate Current 1.5 A
- VGM Max. paek negative Gate Voltage 10 V
IGT Max. required DC Gate Current 90 mA Anode supply = 6V, resistive load, TJ = - 65°C
to trigger 60 Anode supply = 6V, resistive load, TJ = 25°C
35 Anode supply = 6V, resistive load, TJ = 125°C
VGT Max. required DC Gate Voltage 3.0 V Anode supply = 6V, resistive load, TJ = - 65°C
to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C
1.0 Anode supply = 6V, resistive load, TJ = 125°C
VGD Max. DC Gate Voltage not to trigger 0.2 TJ = 125°C, VDRM = rated value
IGD Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, VDRM = rated value
Parameters 16TTS.. Units Conditions
Switching
Parameters 16TTS.. Units Conditions
tgt Typical turn-on time 0.9 µs TJ = 25°C
trr Typical reverse recovery time 4 TJ = 125°C
tqTypical turn-off time 110
TJMax. Junction Temperature Range - 40 to 125 °C
Tstg Max. Storage Temperature Range - 40 to 125
RthJC Max. Thermal Resistance Junction 1.3 °C/W DC operation
to Case
RthJA Max. Thermal Resistance Junction 62
to Ambient
RthCS Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased
to Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Case Style TO-220AC
Thermal-Mechanical Specifications
Parameters 16TTS.. Units Conditions
Kg-cm
(Ibf-in)
4
16TTS.. SAFE
IR
Series
Bulletin I2115 rev. D 12/98
www.irf.com
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
90
95
100
105
110
115
120
125
024681012
30°60° 90° 120° 18
Conduction Angle
Aver age On-state Current (A)
Maximum Allo wable Case Temperature (°C)
16TTS.. Series
R (DC) = 1.3 °C/W
thJC
90
95
100
105
110
115
120
125
0246810121416
DC
30°60° 90°120° 180°
Maxim um Allowable Case Temperat ure (°C)
Cond uc t ion P eriod
A v era ge On- state Cu rrent (A)
16TTS.. Seri es
R (D C) = 1 .3 °C/W
thJC
0
2
4
6
8
10
12
14
16
18
01234567891011
RMS Limit
180°
12
90°
60°
30°
Conduction Angle
Av era ge On- s tate Cu rr ent (A)
M axi mu m Av era ge On -state Pow er Loss (W)
16T TS.. S eries
T = 125°C
J
0
5
10
15
20
25
0 2 4 6 8 10 12 14 16 18
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Per iod
Av era g e O n-s tat e Cu rren t (A )
Maxim um Average On-state Power Loss (W)
16TTS.. Series
T = 125°C
J
80
100
120
140
160
180
110100
Nu m ber Of E qual Am plitud e Half Cy cle Current P ulses ( N )
A t Any Rate d Load Con d it ion And W it h
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM J
Peak Half Sine Wave On-state Current (A)
16TTS..Series
80
100
120
140
160
180
200
0.01 0.1 1
Pulse T rai n Duration (s)
Maximum N on Re pet itive Surge Cu rrent
Peak Half Sine W ave For war d Current ( A)
Versus Pul se Train Du rat i on .
I nitial T = 125°C
No Voltage Reap plied
Rated V Reapplied
J
RRM
16TTS.. Seri es
5
16TTS.. SAFE
IR
Series
Bulletin I2115 rev. D 12/98
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 9 - Gate Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Inst antaneous Gate Curre nt (A)
Instantaneous Gate Voltage (V)
TJ = 25 °C
TJ = 125 °C
b)Recomme nded l oad line f or
VGD
IGD Fre quency Limited by PG(AV)
a)Recomme nded l oad line f or
r ated di/dt: 1 0 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ = -10 °C
1 6 TTS.. Se r ies
1
10
100
1000
012345
T = 25 °C
J
T = 125°C
J
Insta ntaneous On-stat e Vo ltage ( V)
Instantaneous On-state Current (A)
16TTS.. Series
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Steady State Value
(DC Operat ion)
1 6 TTS.. Serie s
Sin gle Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Therma l Imp edan ce Z (°C/W)
6
16TTS.. SAFE
IR
Series
Bulletin I2115 rev. D 12/98
www.irf.com
Outline Table
Dimensions in millimeters (and inches)
3.78 (0.15)
3.54 (0.14)
10.54 (0.41)
MAX. DIA.
15.24 (0.60)
14.84 (0.58)
2.92 (0.11)
2.54 (0.10)
1TERM 2
14.09 (0.55)
13.47 (0.53) 3.96 (0.16)
3.55 (0.14)
0.94 (0.04)
0.69 (0.03)
4.57 (0.18)
4.32 (0.17)
30.61 (0.02) MAX.
5.08 (0.20) REF.
1.32 (0.05)
1.22 (0.05)
6.48 (0.25)
6.23 (0.24)
0.10 (0.004)
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.84 (0.10)
1
3
2.04 (0.080) MAX.
2
2
16 T T S 16
Device Code
1 524
3
1- Current Rating
2- Circuit Configuration:
T = Single Thyristor
3- Package:
T = TO-220AC
4- Type of Silicon:
S = Converter Grade
5- Voltage code: Code x 100 = VRRM
Ordering Information Table
08 = 800V
12 = 1200V
16 = 1600V
(G) 3
2
(A)
1 (K)
2
7
16TTS.. SAFE
IR
Series
Bulletin I2115 rev. D 12/98
www.irf.com
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http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.