TOSHIBA TELECOMMUNICATION DATA ACQUISITION TLP598G MEASUREMENT INSTRUMENTATION The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package (DIP6). The TLP598G is a bi-directional switch which can replace mechanical relays in many applications. e Peak Off-State Voltage On-State Current @ On-State Resistance @ Isolation Voltage e UL Recognized e Trigger LED Current (Ta = 25C) : 400 V (MIN.) : 150mA (MAX.) (A Connection) : 12.0 (MAX.) (A Connection) : 2500 Vrms (MIN.) (A Connection) : UL1577, File No. 67349 Trigger LED Current CLASSIFICATION (mA) MARKING OF (Note 1) @ION = 150mA__|cLASSIFICATION Min. Max. (IFT2) = 2 T2 Standard 5 T2, blank (Note 1): Application type name for certification test, please use standard product type name, i.e. TLP598G (IFT2) : TLP598G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP598G Unit in mm [}o []~ 1 o o 6.4 cro 4 5 6 9) 8.64 + 0.25 | 0.8 7.62 . | 0.25 7.85~8.80 11-9A1 TOSHIBA 11-9A1 Weight : 0.49 PIN CONFIGURATION (TOP VIEW) iq 6 1 2. eo ts 3! A, 3q M4 5. 6. SCHEMATIC 1 20 N : ANODE : CATHODE : NC : DRAIN D1 : SOURCE : DRAIN D2 2001-06-01TOSHIBA TLP598G MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current Ip 30 mA a Forward Current Derating (Ta = 25C) Alp/C 0.3 mA /C Fa Peak Forward Current (100 s pulse, 100 pps) IFp 1 A Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Off-State Output Terminal Voltage VOFF 400 Vv 2 A Connection 150 |On-State RMS Current B Connection ION 200 mA 5 C Connection 300 . A Connection 1.5 f |On-State Current Derating (Ta 2 25C) B Connection AIQn /C 2.0 mA /C A C Connection 3.0 Junction temperature Tj 125 C Storage Temperature Range Tste 55~125 C Operating Temperature Range Topr 40~85 C Lead Soldering Temperature (10 s) Tsol 260 C Isolation Voltage (AC, 1 min., R.H. = 60%) (Note 2) BVs 2500 Vrms (Note 2) : Device considered a two-terminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. | MAX. | UNIT Supply Voltage VDD 320 Vv Forward Current Ip 10 15 20 | mA On-State Current Ion 150 | mA Operating Temperature Topr 20 80 C CIRCUIT CONNECTIONS L, 1 6 LOAD L, 1 6 LOAD L, 1 LOAD A 2 5p or AG 2 5 a DC 2 DC 03 4 03 40 O83 A Connection B Connection C Connection 2001-06-01TOSHIBA TLP598G INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VE Ip =10mA 1.2 1.4 1.7 Vv a Reverse Current IR VR=3V 10 LA Capacitance Cyr V=0, f=1MHz 30 pF jem] FE Off-State Current IOFF VoOFF = 400 V 1 uA Es i Capacitance Corr |V=0, f=1MHz pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Trigger LED Current Iprt Ion = 150mA 1 5 | mA A Connection ION = 150mA, Ip = 10mA 8 12 On-State > Resistance B Connection | Ron ION = 200 mA, Ip = 10mA 4 6 QO, C Connection Ion = 300 mA, Ip = 10mA 2 3 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Capacitance Input to Output Cs Vs = 0, f=1MHz 0.8 pF Isolation Resistance Rg Vg = 500 V, R.H. = 60% bx 1044 1044 | Q AC, 1 minute 2500 = = ly Isolation Voltage BVg | AC, 1 second (in Oil) |s5000/ | * DC, 1 minute (in Oil) _ 5000 | | Vpc SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Turn-on Time toN _|Vpp = 20V, Ry, = 2002 [03 7 107 Turn-off Time tOFF |Ip=10mA (Note 3) | | 02 | 1.0 s (Note 3): VpD SWITCHING TIME TEST CIRCUIT [L_ VOUT toN 10% 90% tOFF 2001-06-01TOSHIBA TLP598G If - Ta BR a Fs > Oo a om SE ze FE 8 <2 g 3 aa 20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) If VF Ta = 25C a = A ee a Fe 2 o a e a > os 1.0 1.2 14 1.6 1.8 2.0 2.2 FORWARD VOLTAGE VF (V) Irp DR PULSE WIDTH <= 100 ps Ta = 25C PULSE FORWARD CURRENT Ipp (mA) 3 10-8 3 10-2 3 10-1 3 100 DUTY CYCLE RATIO DR ALLOWABLE MOS FET POWER DISSIPATION Po (mW) ON-STATE CURRENT Ion(RMS) (mA) Pc Ta A, C CONNECTION B CONNECTION 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) ION (RMS) Ta C CONNECTION B CONNECTION A CONNECTION 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) 2001-06-01TOSHIBA TLP598G ON-STATE VOLTAGE Von (V) ON-STATE CURRENT Ion (mA) ON-STATE CURRENT Ign (mA) Ion IF (A CONNECTION) Ta = 25C 2 4 6 8 10 12 INPUT CURRENT Ip (mA) Von IF (A CONNECTION) Ta = 25C Ion = 150 mA 2 4 6 8 10 12 INPUT CURRENT Ip (mA) Ion Von (A CONNECTION) Ta = 25C Ip =5mA 0.4 0.8 1.2 1.6 2.0 24 ON-STATE VOLTAGE Von (V) SWITCHING TIME ton (ss) SWITCHING TIME toprp (ys) = ay ton IF Voc = 20V Ry = 200 Ta = 25C 3 5 10 30 50 100 INPUT CURRENT Ip (mA) tOFF IF 3 5 10 80 50 100 INPUT CURRENT Ip (mA) 2001-06-01TOSHIBA TLP598G Iryp Ta 2.5 ~ Ion = RATED LOT A ~~ < ON LOTB -- & Ron < 120 LOT C 2.0 e trpr <18 Ao ca = 15 & [ood [am B = 10 eI wt oO 0.5 S fe eB 0 -40 20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) Ron Ta 20 ~ A CONNECTION GS Ip =10mA ~ 16|10N = RATED o tRON < 15S mm 8 S 12 a lan] wR a 8 [anf & x B 4 Zz 25 -5 15 35 55 15 AMBIENT TEMPERATURE Ta (C) OFF-STATE CURRENT Igprr MA) SWITCHING TIME ton, torr (8) IorF Ta Vorr=400V 1 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) tON, torF Ta Ip = 10mA LOT A ~~~ LOTB -- Vpp = 20 V LOT C Ry = 2000 250 200 150 100 50 40 20 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) 2001-06-01TOSHIBA TLP598G RESTRICTIONS ON PRODUCT USE 000707EBC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 7 2001-06-01