GBPC25005(W) thru 2510(W)
FEA T URES
Rating to 1000V PRV
High efficiency
Glass passivated chip junction
Ele c tric a lly isolated metal ca se for max imum heat
dissipation
The plas tic material h a s U L flamma b ility classificatio n
94V-0
UL Recognition Fil e # E95060
ME CHANICA L DATA
Case : Molded plastic with Heatsink internally m ounted
in the bri dge encap s u la t ion
Polarity : A s marked on Bod y
Mounting : Hole for # 10 screw
Weight : 0.63 ounces , 18.0 grams (terminal)
: 0.51 ounces , 14.5 grams (wire)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capa ci tive lo ad, der ate cu rr e n t b y 20%
GBPC
2510/W
1000
700
1000
GBPC
2508/W
800
560
800
GBPC
2506/W
600
420
600
GBPC
2504/W
400
280
400
GBPC
2502/W
200
140
200
GBPC
25005/W
50
35
50
GBPC
2501/W
100
70
100
(with heatsink)
NOTES : 1.Measur ed at non-repetitive, for greater t han 1ms and less than 8. 3m s
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Av erage Forward
Re ctified C urrent
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD )
Maximum R ecurrent Peak Reverse Vo ltage
Maximum RMS Vo lt a ge
Maximum DC Blocking Voltage
Maximum f orward Voltage at 12.5A DC
25.0
350
1.1
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temp erature Range
-55 to +150 C
Typical Thermal Resistance (Note 3)
R
0JC
1.3
C/W
C
J
Typical Junction Capacitance
per element (Note 2)
130
pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 5.0
500
uA
V
A
A
V
UNIT
V
V
374
A S
2
I t
2
I t Rating for fusing (t < 8.3ms), (Not e 1)
2
CHARACTERISTICS SYMBOL
@T
C
= 60 C
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 25
Amperes
(Wire)
GBPC-W
D
A
D
E
F
B
C
D
D
N
GBPC/GBPC-W
All Dimensions in millimete r
DIM. MIN. MAX.
A
C
D
E
F
G
H
B31.80 8.00
7.40
28.30 28.80
18.60
17.60
10.90 11.90
17.60 18.60
16.10 14.80
M
L
K
J
I17.10
13.80
17.1016.10
0.76 0.86
6.30
0.97 1.07
5.59 5.08
HOLE FOR NO. 10 SCREW
N
21.3018.80
6.50
C
G
H
B
L
K
J
I
M
N
GBPC (Terminal)
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KBDH02
RATING AND CH ARACTERISTIC CURV ES
GBPC25005(W) thru GBPC25 10(W)
IN STANTANEOUS F ORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FOR WARD CURRENT ,(A)
0.2 0.4 1.2 1.4
0
0.1
10
100
0.6 0.8 1.0
0.01 1.8
1.6
PULSE WIDTH 300us
TJ= 25 C
1.0
FIG.2 - MAXIM UM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
50
100
150
200
450
400
350
300
250
Single Half-Sine-Wave
(JEDE C MET HOD)
FIG.5 - TYPICAL REVE RSE CHARACTER I STICS
INSTANTANEOUS REVERSE CURRENT ,(uA)
20 40 120 140
0
0.01
0.1
100
10
60 80 100
TJ= 25 C
1.0
50V-4 00V
600V- 1000V
TJ= 125 C
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CA PACITANC E , ( p F)
REVER S E VOLTAGE , VOLTS
10.0
0.1 100
1000
10
1.0
T
J
= 25 C, f= 1MHz
1.0
100
4.0
FIG.1 - FORWARD CURRENT DE RATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
10
0.0
30
CASE TEMPERATURE , C
20
40 60 80 10020 140120
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
REV. 2, 01-Dec-2000, KBDH02