To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. 2SK3160 Silicon N Channel MOS FET High Speed Power Switching REJ03G1085-0300 (Previous: ADE-208-751A) Rev.3.00 Sep 07, 2005 Features * Low on-resistance RDS =130 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1 Rev.3.00 Sep 07, 2005 page 1 of 7 2 3 1. Gate 2. Drain 3. Source S 2SK3160 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID Ratings 200 20 10 40 10 10 6.6 30 150 -55 to +150 ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Rev.3.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 20 -- -- 1.0 -- -- 8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 130 150 13 1100 300 150 15 75 280 110 0.85 100 Max -- -- 10 10 2.5 170 190 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 VNote4 ID = 5 A, VGS = 4 V Note4 ID = 5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 diF/ dt = 50 A/s 2SK3160 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Drain Current ID (A) 30 30 20 10 3 1 c =2 5 Operation in C) 0.3 this area is 0.1 limited by RDS(on) 20 Ta = 25C 0.01 0 50 100 150 1 200 5 2 10 20 50 100 200 500 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 10 V 4V 5V Drain Current ID (A) 10 0 s 1 s =1 DC 0 m ms Op s( era 1s tio ho n( t) T 10 PW 10 0.03 Pulse Test 3.5 V 16 12 Drain Current ID (A) Channel Dissipation Pch (W) 40 3V 8 4 VGS =2.5 V VDS = 10 V Pulse Test 16 12 8 Tc = 75C 4 -25C 25C 2 4 6 8 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 4 3 2 ID = 10 A 1 5A 2A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.3.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (m) Drain to Source Saturation Voltage VDS (on) (V) 0 500 Pulse Test 200 VGS = 4 V 10 V 100 50 20 10 1 2 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (m) 2SK3160 500 Pulse Test 400 2, 5 A 10 A 300 200 10 A VGS = 4 V 2, 5 A 100 10 V 0 -40 0 40 80 120 160 20 Tc = -25C 10 75C 5 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 di / dt = 50 A / s VGS = 0, Ta = 25C 5000 Capacitance C (pF) 500 200 100 50 20 2000 Ciss 1000 500 200 Coss 100 50 Crss VGS = 0 f = 1 MHz 20 10 0.3 1 3 10 30 120 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 VGS VDD = 150 V 100 V 50 V 16 12 VDS 80 ID = 10 A 40 0 10 Reverse Drain Current IDR (A) 200 160 0 100 4 VDD = 150 V 100 V 50 V 20 40 60 80 Gate Charge Qg (nc) Rev.3.00 Sep 07, 2005 page 4 of 7 8 0 100 500 300 Switching Time t (ns) 10 0.1 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 25C Case Temperature TC (C) 1000 Drain to Source Voltage VDS (V) 50 td(off) 100 tf tr 30 10 td(on) 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 10 Drain Current ID (A) 30 100 2SK3160 16 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 20 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 10 V 12 8 VGS = 0, -5 V 4 5V Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 10 IAP = 10 A VDD = 50 V duty < 0.1 % Rg > 50 8 6 4 2 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C 0.1 0.05 PDM 0.02 1 0.0 0.03 0.01 10 t ho D= lse PW pu T 1s 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit VDS Monitor PW T Avalanche Waveform L EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 0 Rev.3.00 Sep 07, 2005 page 5 of 7 VDD 2SK3160 Switching Time Test Circuit Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 VDD = 30 V Vout 10% 10% 10% 90% td(on) Rev.3.00 Sep 07, 2005 page 6 of 7 tr 90% td(off) tf 2SK3160 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-67 PRSS0003AD-A TO-220FM / TO-220FMV 1.8g Unit: mm 10.0 0.3 2.8 0.2 3.2 0.2 2.5 0.2 4.45 0.3 14.0 1.0 5.0 0.3 1.2 0.2 1.4 0.2 2.0 0.3 12.0 0.3 17.0 0.3 0.6 7.0 0.3 2.5 0.7 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Ordering Information Part Name 2SK3160-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. 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