A Aaiitron DEVICES. INC. PRODUCT CATALOG) N-CHANNEL ENHANCEMENT MOS FET | ABSOLUTE MAXIMUM RATINGS SOOV, 2lA, 0.270 SDF460 VJEA SDF460 JEB SDF460 JEC SDF460 JED PARAMETER SYMBOL. UNITS Drain-source Volt.(1) VDSS S500 Vde Drain-Gate Voitage (Reg=1.0Mn) (1) VDGR 500 Vde Gate-Source Voltage Continuous VGS #20 Vde (rae Bercy" Continuous ID 24 Ade Drain Current Pulsed(3) 10M 84 A Total Power Dissipation PD 250 W Power Dissipation Derating > 25C 2.0 W/C Operating & Storage Temp. | TU/Tsig -SS TO +150 C Thermal Resistance Rthdc 0.5 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Tc=25'c (YESS OTHER. FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @ LOW [IR LOSSES | @ LOW THERMAL RESISTANCE PARAMETER SYMBOL| TEST CONDITIONS MIN J TYP | MAX JUNITS @ OPTIONAL MIL-S-19500 Drain-source VGS=0V Breakdown Vor t |V(8R)0SS 10=250 WA 500} - - V SCREENING vate (hresnoldlygs(TH)|VDS=VGS ID=250 A [2.0] - |4.0] V SCHEMATIC eakasee ~~ | 1GsS_|VGS=#20 v - | - |100] na @ _ e = . = _ A Zero Gate VDS*MAX.RATING VGS=0 250] Mt < iTeaTe TT DRAIN Voltage Drain | IDSS |yps=0.8 MAX.RATING 1000 Current VGS=0 TJ=125C - - A A /# . 2] DRAIN 2 | SOURCE Static Drain= VGS=10 V 5 (S) [3[source [3] GATE Rource On oigte/ROS(ON)| |p=12A ~ | > [27 STANDARD BEND JEA Forward Trans- | of. |VDS 2 50 V is|- |- Isc) CONFIGURATIONS Conductance (2)} 9'S | ipS=#12A JEC Input Capacitance] CISS - |4100; - pF Output Capacitance] COSS VGS=0V_ VDS=25 V - 1480/ - pF Reverse Transfer f=1.0 MHz Capacitance CRSS {| 84] - pF Turn-On Delay |td(on)|vop=250V RG=4.3n - | - [35 j ns S 23 Rise Time tr (Hoey 4 RD=120 - | - [120] ns 1 Turn-Off Delayjtd(off)| are essentially indepen- - | [130] ns Fall Time tf dent of operating temp. _ _ 98 ns. Total Gate Charge Gate-Source Plus| Qg - ~ |190] nC wie 3 ate-Drain) VGS*10V, ID=21A 2 12 Gate-Source Qgs VOS=0.8 MAX.RATING ~ | - |27 / nc 3 Charge (Gate charge is esgenti- i2 = . atity in endcen 0 ee es Qed operating temperature) _|- | es] ac (CUSTOM BEND OPTIONS AVAILABLE) Charge STANDARD BEND JEB CONF IGURAT IONS SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C (pMEESS OTHER. PARAMETER SYMBOL| TEST CONDITIONS MIN.| TYP .|MAX.|UNITS Continuous tp: Source Current) IS Mog Seer he -}=- 1|211A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)}] ~- | - | 84] A Diode) (1) ; Diode Forward IF=21A VGS=0V -~|- Voltage 2 vsO To#+25C 1.8) V Reverse =+05 - ~ Recovery Time trr Tooose C oe Reverse Re- - = _ ~ covery Charge | Orr |di/dt=100A/ WS 8.1 HC (CUSTOM BEND OPTIONS AVAILABLE) | TJ = 25C to 150C. 2) Pulse test: Pulse Width <300nS, Duty Cycle <2%Z. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature.