MRF136Y - M/A-COM Technology Solutions

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

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Product Image

Designed for wideband large signal amplifier and oscillator applications

Up to 400 MHz range, in either single-ended or push-pull configuration.

N–Channel enhancement mode

 Guaranteed 28 volt, 150 MHz performance

Output power = 30 Watts

Broadband gain = 14 dB (Typ.)

Efficiency = 54% (Typ.)

 Small– and large–signal characterization

 100% tested for load mismatch at all phase angles with 30:1 VSWR

 Space saving package for push–pull circuit applications

 Excellent thermal stability, ideally suited for Class A operation

 Facilitates manual gain control, ALC and modulation techniques

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

RF POWER MOSFET CONSIDERATIONS

DESIGN CONSIDERATIONS

The MRF136Y is a RF power N–Channel enhancement-

mode field–effect transistor (FET) designed especially for

VHF power amplifier applications. M/A-COM RF MOS

FETs feature a vertical structure with a planar design, thus

avoiding the processing difficulties associated with V–

groove vertical power FETs.

M/A-COM Application Note AN211A, FETs in Theory and-

Practice, is suggested reading for those not familiar with

the construction and characteristics of FETs.

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity

from thermal runaway, and the ability to withstand severely

mismatched loads without suffering damage. Power output

can be varied over a wide range with a low power dc con-

trol signal, thus facilitating manual gain control, ALC and

modulation.

DC BIAS

The MRF136Y is an enhancement mode FET and, there-

fore, does not conduct when drain voltage is applied. Drain

current flows when a positive voltage is applied to the gate.

See Figure 10 for a typical plot of drain current versus gate

voltage. RF power FETs require forward bias for optimum

performance.

The value of quiescent drain current (IDQ) is not critical

formany applications. The MRF136Y was characterized at

IDQ = 25 mA, which is the suggested minimum value of IDQ.

For special applications such as linear amplification, IDQ

may have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. There-

fore, the gate bias circuit may generally be just a simple

resistive divider network. Some special applications may

require a more elaborate bias system.

GAIN CONTROL

Power output of the MRF136Y may be controlled from

its rated value down to zero (negative gain) by varying the

dc gate voltage. This feature facilitates the design of man-

ual gain control, AGC/ALC and modulation systems. (See

Figure 9.)

AMPLIFIER DESIGN

Impedance matching networks similar to those used

with bipolar VHF transistors are suitable for MRF136Y. See

M/A-COM Application Note AN721, Impedance Matching

Networks Applied to RF Power Transistors. The higher

input impedance of RF MOS FETs helps ease the task of

broadband network design. Both small signal scattering

parameters and large signal impedances are provided.

While the s–parameters will not produce an exact design

solution for high power operation, they do yield a good first

approximation. This is an additional advantage of RF MOS

power FETs.

RF power FETs are triode devices and, therefore, not

unilateral. This, coupled with the very high gain of the

MRF136Y, yields a device capable of self oscillation. Sta-

bility may be achieved by techniques such as drain loading,

input shunt resistive loading, or output to input feedback.

Two port parameter stability analysis with the MRF136Y s–

parameters provides a useful tool for selection of loading or

feedback circuitry to assure stable operation. See M/A-

COM Application Note AN215A for a discussion of two port

network theory and stability.

LOW NOISE OPERATION

Input resistive loading will degrade noise performance, and

noise figure may vary significantly with gate driving imped-

ance. A low loss input matching network with its gate im-

pedance optimized for lowest noise is recommended.

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Outline Drawing

The RF MOSFET Line

30W, to 400MHz, 28V

Rev. V2

MRF136Y

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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