1
F5048 FUJI Intelligent Power MOSFET
Intelligent Power MOSFET
Features
• Over temperature protection
• Short circuit protection
• Low on-resistance
• High speed switching
Applications
• Solenoid driver
• Lamp driver
• Replacements for fuse and relay
Outline drawings [mm]
Connection
Electrical characteristics (at Tc=25°C unless otherwise specifi ed)
Description Symbol Conditions min. typ. max. Unit
Drain-source clamp voltage V
DSS
I
D
=1mA, V
GS
=0V 80 –100 V
Gate threshold voltage V
GS
(th) I
D
=10mA, V
DS
=14V 1.1 –2.9 V
Operation gate voltage (protection circuit operates) V
GS
(p) –3.0 –7.0 V
Zero gate voltage drain current I
DSS
V
DS
=16V, V
GS
=0~1.5V ––
15 μA
Gate-sourse leakage current I
GS
(n)*V
GS
=5V ––
250 μA
I
GS
(un)** V
GS
=5V Tj>150˚C––
350 μA
Drain-source on-state resistance R
DS
(on) ID=8A, V
GS
=5V ––
125 mΩ
Turn- on time t
on
V
DS
=14V, I
D
=8A, V
GS
=5V
––
100 μs
Turn- of f time t
off
––
100 μs
Over-temperature protection T
trip
V
GS
=5V 150 ––
˚C
Short circuit protection I
OC
V
GS
=5V 13 ––
A
Short circuit current limiting IOC(lim) V
GS
=5V, V
DS
=14V 27 ––
A
Electrical characteristics (at Tc=-40~105°C unless otherwise specifi ed)
Description Symbol Conditions min. typ. max. Unit
Drain-source clamp voltage V
DSS
I
D
=1mA, V
GS
=0V 77 –104 V
Gate threshold voltage V
GS
(th) I
D
=10mA, V
DS
=14V 1.0 –3.0 V
Operation gate voltage (protection circuit operates) V
GS
(p) –3.0 –6.7 V
Zero gate voltage drain current I
DSS
V
DS
=16V, V
GS
=0V ––
25 μA
Gate-sourse leakage current I
GS
(n)*V
GS
=5V ––
300 μA
I
GS
(un)** V
GS
=5V, Tj>150˚C––
350 μA
Drain-source on-state resistance R
DS
(on) ID=8A, V
GS
=5V ––
210 mΩ
Turn- on time t
on
V
DS
=14V, I
D
=8A, V
GS
=5V
––
110 μs
Turn- of f time t
off
––
110 μs
Short circuit protection I
OC
V
GS
=5V 8 ––
A
Short circuit current limiting IOC(lim) V
GS
=5V, V
DS
=14V 19 ––
A
Note * : Under normal operation
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)
Note * : Under normal operation
Note ** : Under self protection (Short circuit ~ Short circuit protection ~ Over-temperature protection)
Thermal resistance
Description Symbol Test conditions min. typ. max. Unit
Thermal resistance Rth (j-c) Junction-case ––
2.9 °C/W
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Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C, unless otherwise specifi ed)
Description Symbol Characteristics Unit Remarks
Drain-source voltage V
DSS
80 V DC
Gate-source voltage V
GSS
-0.3~7.0 VDC
Continuous drain current I
D
15(27) A DC. The in-rush current capability up to 27A
Maximum power dissipation P
D
43 W –
Operating junction temperature T
j
150 °C –
Storage temperature range T
stg
-55 ~ 150 °C –
Single pulse inductive load
switch-off energy dissipation E
CL
100 mJ T
j
=150°C, L=5mH, I
D
=8A
Single pulse, dv/dt≤10V/μs
T-pack(s)
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2
F5048 FUJI Intelligent Power MOSFET
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For incandescent lamp control
Note *** : F5048 is able to control the in-rush current up to 27A(Tc=25°C), up to 33A(Tc=40°C)
For inductive load
Circuit block diagram
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3
FUJI Intelligent Power MOSFET
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F5048
2345678
0
50
100
150
200
250
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tj):ID=8A,Tj=25
RDS(on)[m ]
VGS[V]
-100 -50 0 50 100 150 200
0
50
100
150
200
250
300
350
400
VGS=5V
typ.
VGS=5V
max.
Drain-source on-state resistance
RDS(on)=f(Tj):ID=8A,VGS=5V
RDS(on)[m ]
Tj[ ]
-100 -50 0 50 100 150 200
0
50
100
150
200
250
300
350
400
max.
typ.
Gate-source leakage current
IGS(n)=f(Tj):VGS=5V,VDS=0V
IGS(n)[ A]
Tj[ ]
2345678
0
50
100
150
200
250
300
350
400
max.
typ.
Gate-source leakage current
IGS(n)=f(VGS):Tj=25 ,VDS=0V
IGS(n)[ A]
VGS[V]
-100 -50 0 50 100 150 200
0
10
20
30
40
50
60
70
80
90
100
110
120
min.
max.
typ.
Drain-source clamp voltage
VDSS=f(Tj):ID=1mA,VGS=0V
VDSS[V]
Tj[ ]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
min.
max.
typ.
Gate threshold voltage
VGS(th)=f(Tj):VDS=14V,ID=10mA
VGS(th)[V]
Tj[ ]
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4
F5048 FUJI Intelligent Power MOSFET
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-100 -50 0 50 100 150 200
0
10
20
30
40
50
max.
typ.
Zero gate voltage drain current
IDSS=f(Tj):VDS=16V,VGS=0V
IDSS[ A]
Tj[ ]
-100 -50 0 50 100 150 200
0
50
100
150
200
toff
typ.
ton
max.
toff
max.
ton
typ.
Turn-on time,Turn-off time
ton,toff=f(Tj):VDS=14V,ID=8A,VGS=5V
ton,toff[ S]
Tj[ ]
2345678
0
5
10
15
20
25
30
35
40
min.
typ.
Short circuit protection
IOC=f(VGS):Tj=25
IOC[A]
VGS[V]
-100 -50 0 50 100 150 200
0
5
10
15
20
25
30
35
40
min.
typ.
Short circuit protection
IOC=f(Tj):VGS=5V
IOC[A]
Tj[ ]
-100 -50 0 50 100 150 200
0
100
200
300
400
500
600
700
800
Operating short-circuit
protection circuit
IGS(un)max.
IGS(un)
max.
Operating short-circuit protection circuit
and over temperature protection circuit
(Tj>150 ) IGS(un)max.
IGS(un)
typ.
Gate-source leakage current
IGS(un)=f(Tj):VGS=5V
IGS(un)[ A]
Tj[ ]
-100 -50 0 50 100 150 200
0
10
20
30
40
50
60
70
min.
typ.
Current limit under short circuit protection
Ioc(lim)=f(Tj):VGS=5V
Ioc(lim)[A]
Tj[ ]
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5
FUJI Intelligent Power MOSFET
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F5048
WARNING
1. This Catalog contains the product specifi cations, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specifi cation changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifi cations.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd.
is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fi re, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, fl ame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
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below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
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• Medical equipment
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equipment (without limitation).
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Systems Co., Ltd.
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accordance with instructions set forth herein.
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