SEMIKRON INC SLE D MM &Labb7h 0003878 824 MESEKG SEIVIINRUN VrsM trav (sin. 180; Tease = 75C) Varnm Vv 1550A 2000 A 400 SKN 1500/04 - 600 - SKN 2000/06 1200 SKN 1500/12 SKN 2000/12 1600 SKN 1500/16 SKN 2000/16 2000 SKN 1500/20 SKN 2000/20 2400 SKN 1500/24 SKN 2000/24 2900 SKN 1500/29 - Symbol | Conditions SKN 1500 SKN 2000 IFAV sin.180; Tease = 75C;DSC 1550 A 2000 A IFsM Ty = 25C 10 ms - - Ty =175C 16kA 25kA *t Ty = 25C - - Ty =175C 1,28 -10As | 3,12 -10A?s In Ty = 175 C;VR = Varm 50 mA 50 mA Ve Ty = 25C; (lp = ...);max. 1,3V(1800A) | 1,3V(3400A) Vito) Ty =175C 0,85V 0,85V rT Ty =175C 0,25 mQ 0,15 mQ Rihjc psc 0,033 C/W 0,025 C/W ssc 0,066 C/W 0,050 C/W Rtheh psc 0,007 C/W 0,005 C/W ssc? 0,014 C/W 0,010 C/W Ty -40...4 175C Tstg -40 ...-+- 200C F SI units 12...13,5kN 17,5... 20kN a US units 2700 ... 3040 Ibs. |3950 ... 4500 Ibs] w 300g 530 g Case E20 E21 1 DSC = Double sided cooling; SSC = Single sided cooling Reciifier Diodes SKN 1500 (T-O (-23 SKN 2000 Features e@ Capsule type metal-ceramic packages with precious metal pressure contacts @ High voltage grades available Typical Applications @ All-purpose high power rectifier diodes e Industrial high power drives and medium traction applications by SEMIKRON B8-39 SUE D MM 8436671 0003879 74D MESEKG SEMIKRON INC 7-01-23 3000 3000 WHSKN 1500 w 2000 2000 1000 1000 0,25. ciw Fray Pray 0 Ira 500 1000 1500 A 0 Tamb 50 100 150 200 Fig. 2a Power dissipation vs. forward current and ambient temperature 4000 4000 jaz o ciw | SKN 2000 3000 2000 1000 Pray Tray 500 1000 11600 2000 A O Tamb 50 100 Fig. 2b Power dissipation vs. forward current and ambient temperature 1500 SKN 1500 A DSC 1500 1000 1000 500 500 Iray tray 0 0 50 Tcase 100 150 200 50 Tease 100 150 Fig. 3a Rated forward current vs. case temperature Fig.3b Rated forward current vs. case temperature B8-40 by SEMIKRON SLE D MM 8136671 0003880 4e MESEKG SEMIKRON INC SEMIKRON 2500 1500 1000 500 TrAV Tease 100 150 200 Fig. 3c Rated forward current vs. case temperature o/ cL. SKN 1500 Ww 0,08 0,06 0,04 0,02 Z(th}t 0 1073 10-2 10 101 s 102 Fig.5a Transient thermal impedance vs. time 3000 a| SKN 1500 2000 1000 if % p 0.5 1 15 Vv 2 Fig.6 a Forward characteristics T-01-23 ~ 1500 A SKN 2000 SSC 1000 500 IFAV 0 50 Tease 100 150 % 200 Fig. 3d Rated forward current vs. case temperature 0,075 $ SKN 2000 0,05 0,025 Zith}t 90-3 t 40-2 10 101 s 102 Fig.5b Transient thermal impedance vs. time 4000 A[LSKN 2000 3000 2000 175 =175 25 4125C f 1000 if % VE 0,5 1 4,5 V2 Fig. 6 b Forward characteristics by SEMIKRON B841 SEMIKRON INC Irovt lESM 18 legu [kA} ts Tyy225 C | Ty2t75 C SKN 1500 19 16 SKN 2000 30 2s 12 0.8 0.6 0.4 t ms 103 Fig. 7 Surge overload current vs. time T-01-23 SLE D MM 813667) 000388) 319 MEISEKG SKN 1500 Case E 20 JEDEC: DO-200 AB Dimensions in mm SKN 2000 Case E 21 JEDEC: DO-200AC Dimensions in mm B8-42 by SEMIKRON