A D V A N C E D S E M I C O N D U C T O R, I N C. REV. D
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 65 V
BVCES IC = 50 mA 65 V
BVEBO IE = 15 mA 3.0 V
ICES VCE = 50 V 30 mA
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
PG
ηC
POUT VCC = 50 V PIN = 63 W f = 1235 to 1365 MHz
6.3
40
270
6.8
45
300
dB
%
W
Conditions: Pulse Width = 50 µS Duty Cycle = 4%
NPN SILICON RF POWER TRANSISTOR
AM1214-300
DESCRIPTION:
The ASI AM1214-300 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• Common Base
• PG = 6.5 db at 325 W/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 18.75 A
VCC 55 V
PDISS 730 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θJC 0.24 °C/W
PACKAGE STYLE .400 2L FLG(A)
MINIMUM
inc h e s / mm
.10 0 / 2.5 4
.376 / 9.55
.05 0 / 1 .27
.11 0 / 2 .79
B
C
D
E
F
G
A
MAXIMUM
.12 0 / 3.0 5
.130 / 3.30
.39 6 / 10 .0 6
inches / mm
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.69 0 / 17 .5 3
.00 3 / 0 .08
.51 0 / 12 .9 5
.71 0 / 18 .0 3
.00 6 / 0.1 8
N
M.118 / 3.00 .131 / 3.33
.13 5 / 3 .43 .1 4 5 / 3 .68
.072 / 1.83.05 2 / 1.3 2
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.10 0 / 2.5 4
.39 5 / 10 .0 3 .40 7 / 10 .3 4
.890 / 22.61 .910 / 23.11
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. D
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
ERROR! REFERENCE SOURCE NOT FOUND.
Specifications are subject to change without notice.
AM1214-300
FREQ ZIN (Ω) ZCL (Ω)
1235 MHz 2.5 + j5.0 2.0 – j2.5
1300 MHz 1.5 + j3.5 2.5 – j2.5
1365 MHz 1.0 + j3.5 2.0 – j3.0
TEST CIRCUIT
