SOSHT NL International PD -9.14120 TeaR Rectitier PRELIMINARY IRF7422D2 FETKY MOSFET & Schottky Diode e Co-packaged HEXFET Power _ MOSFET and Schottky Diode Ideal For Buck Regulator Applications e Generation V Technology e SO-8 Footprint Description The FETKY family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portabie electronics applications. Voss = -20V Rpscon) = 0.090 Schottky Vf = 0.52V The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phrase, infra red or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Units Ip @ Ta = 26C Continuous Drain Current, Vos @ -4.5V** -4.6 lp @ Ta = 25C Continuous Drain Current. Vas @ -4.5V* -2.9 Ip @ Ta = 70C Continuous Drain Current, Veg @ -4.5V" -2.3 A lpm Pulsed Drain Current -23 Py @Ta = 25C Pawer Dissipation (PCB Mount)** 2.5 WwW Pp @T, = 25C Power Dissipation (PCB Mount)" 1.0 Ww Linear Derating Factor (PCB Mount) 8.0 mWPC Ves Gate-to-Source Voltage + 8.0 Vv Ty Tst6 Junction and Storage Temperature Range ; -55 to + 150 C Thermal Resistance Parameter Typ. Max. Units Raa Junction-to-Amb. (PCB Mount, steady state)* 100 125 Resa Junction-to-Amb. (PCB Mount, steady state)** 40 50 CIW Rega Junction-to-Amb. (Schottky) * 100 125 | Notes: Repetitive rating pulse width limited by max. junction temperature (see fig. 11) Igp $ -2.3A, di/dt < -79A/US. Voo < Visrioss. Ty S$ 100C Pulse width < 300ps ~ duty cycle < 2% * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. 6/9/97IRF 7422D2 International TOR Rectifier MOSFET Electrical Characteristics @ T, = 25C (unless otherwise specified) Parameter iMin.| Typ.| Max. | Units Conditions Vienoss Drain-to-Source Breakdown Voltage :-20 | -| Vv Vas = OV, Ip = -250nA Rosin) _| Static Drain-to-Source On-Resistance |} "| 0-09] 9 | Vas= *5V. n= 239A @ {==} ] 0.14 Vas = -2.7V, Ip = -1.2A @ Vesithy Gate Threshold Voltage 0.70} -]| Vv Vos = Vas, lo = -250pA Os Forward Transconductance 2.6 | -{ S | Vos = -16V, Ip =-2.3A loss Drain-to-Source Leakage Current =) 10 yA Vos = -16V, Vas = OV || -25 Vos = -16V, Veg = OV, Ty = 125C loss Gate-to-Source Forward Leakage ;~]| ~]| -100 nA Ves = -8.0V Gate-to-Saurce Reverse Leakage ~{ | 100 Ves = 8.0V Qy Total Gate Charge | 12] 18 ip = -2.3A Qgs Gate-to-Source Charge i~-! 1.9] 2.9 | mC | Vpg =-16V Qgu Gate-to-Drain ("Miller") Charge -! 5.4 | 8.41 Vos = -4.5V, See Fig. 6 and 9 taton) Tum-On Celay Time ~| Wi Vop = -10V tr Rise Time |{ 43 | Ip = -2.3A ta(ott) Turn-Off Delay Time fa} 33 | ns Rg = 6.20 t Fall Time ~| 42 | Ro = 4.30. See Fig. 10 @ Ciss Input Capacitance | 530} Ves = 0V Coss Output Capacitance -~j} 300| | pF | Vos =-15V Crss Reverse Transfer Capacitance |~| 160| | f = 1.0MHz, See Fig. 5 MOSFET Source-Drain Ratings and Characteristics Parameter i Min. | Typ.) Max. | Units Conditions is Continuous Source Current(Body Diode)! | ~ | -0.75 low Pulsed Source Current (Body Diode) | -|| -18| * Vsp Body Diode Forward Voltage | | -1.0 Vo of Ty =25C, Is = -1.9A, Ves = OV ter Reverse Recovery Time (Body Diode) | | 43 | 65 ns | Ty = 25C. lp = -2.3A Orn Reverse RecoveryCharge | | 44 | 66 nC j di/dt = -100Ais @ Schottky Diode Maximum Ratings Parameter | Max. | Units, Conditions If (av) Max. Average Forward Current | 3.0 50% Duty Cycle. Rectangular Wave, Tc = 120C Tao) 4 50% Duty Cycle. Rectangular Wave, Tc = 112C Isa Max. peak one cycle Non-repetitive ' 200 Sus sine or 3us Rect pulse Following any rated Surge current 20 A 10ms sine or 6ms Rect. pulse] load condition & \ with Vir applied Schottky Diode Electrical Specifications Parameter ' Max. |Units Conditions Vim Max. Forward voltage drop ' 0.57 if = 3.0, Tj = 26C "O77 if =6.0, T= 28C 0.52 v if=3.0, Ty = 125C | | 0.79 | if=6.0,T)= 126C. | Im Max. Reverse Leakage current [ 280) ma | Y= 20V | T= 25C 20 | | Ti= 125C Ct Max. Junction Capacitance 290 | pF Vr = 5Vdc ( 100kHz to 1 MHz) 25C dvidt Max. Voltage Rate of Charge 4800| V/s ; Rated Vr ( HEXFET is the reg. TM for Internanonal Rectifier Power MOSFET s }International TaR Rectifier 2.09 BOTTOM - 1.5 Ips Drain-to-Source Current (A) 15V 20us PULSE WIDTH Ty) = 25C of 1 sat Vag: Orain-to-Source Voltage (V} Fig 1. Typical Output Characteristics -Ip , Drain-to-Source Current (A) t Vog = -10V 20us PULSE WIDTH 30 2.0 2.5 35 -Ves , Gate-to-Source Voltage (V) 4a Fig 3. Typical Transfer Characteristics Drain-to-Source On Resistance Ip , Drain-to-Source Current (A) (Normalized) R DS(on) IRF7422D2 100 -2.0 BOTTOM - 1.5V 40 1.5V Sty 20us PULSE WIDTH Ty = 100C of 1 Vos: Drain-to-Source Voltage .V} Fig 2. Typical Output Characteristics 2.0 19 TW EL | | on os it 0.0 -60 43 -20 9 20 T; _ Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. TemperatureIRF7422D2 1200 Ves = CV, f= 1MHz iss = Cgs + 03g, Cys SHORTED ss = Cga aoo i =O + 500 C, Capacitance (pF) { 10 1090 Vog, Dramn-to-Source Voltage (V} Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -Isp , Reverse Drain Current (A) Vv 2 OV 04 0.8 12 +6 20 Vgp , Source-to-Drain Voltage (V)} Fig 7. Typical Source-Drain Diode Forward Voltage Veg: Gate-to-Source Voltage (V) ly. Brain Current (A} international TOR Rectifier FOR TEST CIACUIT SEE FIGURE $ 9 4 8 12 16 20 Qg, Total Gate Charge (nC} Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY ROSion) = 26C = 100C le Putse i 1 10 +00 -Vog. Drain-to-Source Voltage (V) Fig 8. Maximum Sate Operating AreaInternational TOR Rectifier -4.5V Ve Charge -+ Fig 9a. Basic Gate Charge Waveform Current Requialor NT ama 'g ; 'b Curreor Samphng Hasistors Fig 9b. Gate Charge Test Circuit 1000 106 Thermal Response (Zu yj, ) SINGLE PULSE THEAMAL RESPONSE) Ty ot _ 0.00001 0.0001 0 001 G.0t IRF7422D2 Ro Vos AAW I\D.U.T. +. Voc r Pulse Width < | ps Duty Factor $0.1 % Fig 10a. Switching Time Test Circuit tdion) tr tatty tt Msi | f= | i 10% | | i | 90% | \ \ TN Fig 10b. Switching Time Waveforms Lith ne tl ae a nh Notes: 1. Duty factor D = tite 2.PeakTy=Pom*Zinga + Ta t 19 100 1000 t, , Rectangutar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal {mpedance, Junction-to-AmbientIRF7422D2 instantaneous Forward Curtent- te (A) Fig. 12 - Max. Forwaro Voltage Drop Characteristics 0.0 0.4 Forward Voltage Drop - Vey (V) 98 12 16 20 24 International TOR Rectifier 100 ~ J= 150C <x E 25C oc ~ 100C = g 5C oC 8 oc 3 a ; gor 0.001 2 4 8 12 16 20 Reverse Voltage -Vaq (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C 7 (pF) 100 9 4 8 12 16 20 Reverse Voltage - Vp (V) Fig.14 - Typical Junction Capacitance Vs. Reverse VoltageInternational IOR Rectifier IRF7422D2 Peak Diode Recovery dv/dt Test Circuit p+ Circuit Layout Considerations D.U.T tF * Low Stray Inductance a gd Ground Plane Low Leakage Inductance Current Transformer + ] 6 | Lawl LN WA -F Re 4 dv/dt controlled by Re + e Driver same type as D.U.T. +7_ Voo * Isp controtied by Duty Factor *D" e D.U.T. - Device Under Test * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Penod p = EW. +}-p w- 4 Period t Vgge10V * 6G Le @ D.ULT. gg Waveform Reverse _ Recovery | Body Diode Forward Current [ Curent _ dvdt @ D.U.T. Vog Wavetorm , Diode Recovery N\ dv/dt Yoo Re-Applied -__~ [__4 __ Voltage Body Diode Forward Drop @ (inductor Curent Ge Rippte < 5% Isp i * Ves = 5V for Lagic Level Devices Fig 15. For P-Channel HEXFETSIRF7422D2 International TOR Rectifier Package Outline $08 Outline INCHES MILLIMETERS | i DIM Twin | MAX | MIN | Max a 2 aA | .os32| .o688| 1.35 | 1.75 I E E - At| .0040[ .o09a | 0.10 | 6.25 OF 8 Old .018 0.36 ' 0.46 Lea c | .oo7s| ooga| 0.19 0.25 1 | o | 199 | 196 | 4.80 | 4.98 g iy a , & } 180 | 187 | 3.81 3.99 a ' @ | .050 BASIC 127 BASIC aX aT oom ow eet Det | 0256ASIC | 0.635 BASIC { 1 iy aH | 2284] .2440/ 5.80: 620 TAPE wt oo "K | 011 | 019 | 0.28 : 0.48 Pa eis Qc mo wie 8x At u ax e! Dok ! 0.16 O50 0.41 127 (Slows LoVe CASES) 8 SaomuSEe Fasten ae RECOMMENDED FOOTPRINT NOTES: 1, DIMENSIONING ANO TOLERANGING PER ANSI Y14 5M-:982. 2. CONTROLLING D MENSION : INCH _ 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) [ naga 4. OUTLINE CONFOSMS TO JEDEC OUTLINE MS-012AA. (GJ OIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6.46 | 258)" ad pax MOLD PROTRUSIONS NOT TO EXCEED 0.25 (006). fl (] OIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE i ~ OTe (028) 4 V.27 ( oxy io 3x Part Marking Information S08 EXAMPLE: THIS IS AN IRF7101 DATE CODE (YWW) a Y = LAST DIGIT OF THE YEAR Baa g WW = WEEK \IOR 312 | , INTERNATIONAL F7101 ae OR RECTIFIER ea, WAFER rs PRESEN LOT CODE BSE S LOGO PART NUMBER TOP (LAST 4 DIGITS) BOTTOMInternational IRF 7422D2 TOR Rectifier Tape & Reel Information SOs Dimensions are shown in millimeters (inches) _ 4.10 (.161} 1.B5 (072) __ 3.90 (.154) 1.65 (.065) 0.35 (.013) 2.05 (.080) 1.60 (.062) . 0.25 (.010) TERMINATION os @ \ NUMBER 1 1.95 (.077) 1,50 (.059) | \e @ @-9-64+ 9-9-6 I 5.55 (.218) Y fam) ei 45 (.215) 12.30 (484) i, fp e+ 6-4 5.30 (.208}} jf 11.70 (464) = ra 5.10 (.201) Toro. 8.100.318) _ x 2.60 (102) FEEO DIRECTION 7.90 (311} | 50 (059) LL. 220.088 ~ wee 6.501.255) wad bee 2.201. 6.30 (.248) 2.00 (.079) wf 193.201.5191 15.40 1.607) 12.80 (504) 14.90 (469) | NO @ i a \ | i i \ ) I} {> / | | / S\N i: . , @ 330.00 NA {| 50.00 (13,000) |_ ~~. (4969) max. | | ) : MIN. : a | / ir 1 SS it | HOEE t wee Vl tL 18.40 (724) NOTES: I MAX Gy 1 CONFORMS TO ElA-481-1 40.566) i (Zi INCLUDES FLANGE DISTORTION @ OUTER EDGE eat a8) G] OIMENSIONS MEASURED @ HUB 4 CONTAOLLING DIMENSION : METAIC TOR Rectifier WORLD HEADQUARTERS: 233 Kansas St., E! Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 228, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49. 10071 Borgaro, Torino Tel: ++ 39 11 451 01114 IR FAR EAST: K&H Bidg., 2F, 30-4 Nishi-[kebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www. irf.com/ Data and specifications subject to change without notice. 6/97