Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON * Specified 28 Volt, 1.6 GHz Class-C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts * Characterized with Series Equivalent Large-Signal Parameters from 1500 MHz to 1700 MHz * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C-01, STYLE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current IC 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 26 0.15 Watts W/C Storage Temperature Range Tstg -65 to +150 C RJC 6.8 C/W THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case (1) (2) (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF16006 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 55 -- -- 55 -- -- 4.0 -- -- -- -- 2.5 20 -- 80 11 -- -- 7.4 -- -- 40 45 -- -- 8.0 -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) V(BR)CES Collector-Base Breakdown Voltage (IC = 40 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 2.5 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) Vdc Vdc Vdc ICES mAdc ON CHARACTERISTICS DC Current Gain (ICE = 0.2 Adc, VCE = 5.0 Vdc) hFE -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB= 28 Vdc, f = 1.0 MHz) Cob pf FUNCTIONAL TESTS Common-Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Gpe Collector Efficiency (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Return Loss (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) IRL Output Mismatch Stress (VCC = 28 Vdc, Pout = 6 Watts, f = 1600 MHz, Load VSWR = 3:1 all phase angles at frequency of test) MRF16006 2 dB % dB No Degradation in Output Power MOTOROLA RF DEVICE DATA $*) Board Material - Teflon Glass Laminate Dielectric Thickness - 0.30, r = 2.55, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 F, Dipped Mica Cap 0.1 F, Chip Cap C4 L1, L2 L3 R1 47 F, 50 V, Electrolytic Cap 3 Turns, #18, 0.133 ID, 0.15 Long 9 Turns, #24 Enamel 82 , 1.0 W, Carbon Resistor Figure 1. MRF16006 Test Fixture Schematic , > > > '4 > > '/3 ' , > $ $*) 4:9 % f MHz Zin Ohms ZOL* Ohms 1500 6.28 + j 8.53 1.22 - j 1.37 1600 7.04 + j 9.00 1.58 - j 0.53 1700 9.55 + j 12.86 1.71 + j 0.39 ' 430:-(9+ 4, 9.+ 459/2:2 14(* /25+*(3)+ /394 <./). 9.+ *+;/)+ 4:95:9 45+7(9+8 (9 ( -/;+3 4:95:9 54<+7 ;419(-+ (3* ,7+6:+3)= Figure 2. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF16006 3 4:9 #"#"% %""! , > > $ $*) /3 #" % %""! Figure 3. Output Power versus Input Power MRF16006 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- U Q 2 PL " "! ! " ! & " ! -B- K !"& "" " ! D N E ! ! J H C -T- CASE 395C-01 ISSUE A MOTOROLA RF DEVICE DATA MRF16006 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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