1
MRF16006MOTOROLA RF DEVICE DATA
The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
•Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 6 Watts
Minimum Gain = 7.4 dB, @ 6 Watts
Minimum Efficiency = 40% @ 6 Watts
•Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 60 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector–Current IC1.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD26
0.15 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2) RθJC 6.8 °C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF16006/D
SEMICONDUCTOR TECHNICAL DATA
CASE 395C–01, STYLE 2
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
Motorola, Inc. 1995
REV 2
MRF16006
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 40 mAdc, VBE = 0) V(BR)CES 55 — — Vdc
Collector–Base Breakdown Voltage
(IC = 40 mAdc, IE = 0) V(BR)CBO 55 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 2.5 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0) ICES — — 2.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 0.2 Adc, VCE = 5.0 Vdc) hFE 20 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB= 28 Vdc, f = 1.0 MHz) Cob 11 — — pf
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 6 W atts, f = 1600/1640 MHz) Gpe 7.4 — — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 6 W atts, f = 1600/1640 MHz) η40 45 — %
Return Loss
(VCC = 28 Vdc, Pout = 6 W atts, f = 1600/1640 MHz) IRL — 8.0 — dB
Output Mismatch Stress
(VCC = 28 Vdc, Pout = 6 W atts, f = 1600 MHz, Load
VSWR = 3:1 all phase angles at frequency of test)
ψNo Degradation in Output Power
Figure 1. MRF16006 Test Fixture Schematic
B1 Fair Rite Bead on #24 Wire
C1, C5 100 pF, B Case, ATC Chip Cap
C2 0.1 µF, Dipped Mica Cap
C3 0.1 µF, Chip Cap
C4 47 µF, 50 V, Electrolytic Cap
L1, L2 3 Turns, #18, 0.133″ ID, 0.15″ Long
L3 9 Turns, #24 Enamel
R1 82 Ω, 1.0 W, Carbon Resistor
Board Material – Teflon Glass Laminate Dielectric
Thickness – 0.30″, εr = 2.55″, 2.0 oz. Copper
Figure 2. Series Equivalent Input/Output Impedance
Ω
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MRF16006MOTOROLA RF DEVICE DATA
f
MHz Zin
Ohms ZOL*
Ohms
1500 6.28 + j 8.53 1.22 – j 1.37
1600 7.04 + j 9.00 1.58 – j 0.53
1700 9.55 + j 12.86 1.71 + j 0.39
MRF16006
4MOTOROLA RF DEVICE DATA
Figure 3. Output Power versus Input Power
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MRF16006MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 395C–01
ISSUE A
U
D
K
N
J
H
E
C
–T–
–A–
–B–
2 PLQ
MRF16006
6MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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MRF16006/D
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