RF2132 0 LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications * 4.8V AMPS Cellular Handsets * Driver Amplifier in Cellular Base Stations * 4.8V CDMA/AMPS Handsets * Portable Battery-Powered Equipment * 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages. -A0.009 0.004 0.158 0.150 0.021 0.014 0.069 0.064 0.392 0.386 0.244 0.230 0.050 0.060 0.054 8 MAX 0 MIN 0.035 0.016 Optimum Technology Matching(R) Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS 0.010 0.008 Package Style: Standard Batwing Features * Single 4.2V to 5.0V Supply * Up to 29 dBm Linear Output Power 16 GND * 29dB Gain With Analog Gain Control NC 2 15 RF OUT * 45% Linear Efficiency RF IN 3 14 RF OUT * On-board Power Down Mode VCC 1 GND 4 13 GND GND 5 12 GND GND 6 GND 7 PC 8 BIAS 11 RF OUT 10 RF OUT Ordering Information RF2132 Linear Power Amplifier RF2132PCBA-41X Fully Assembled Evaluation Board 9 GND Functional Block Diagram Rev B10 060908 * 800MHz to 950MHz Operation RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-109 RF2132 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (POUT<32dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Storage Temperature Junction Temperature Parameter Rating Unit -0.5 to +8.0 -0.5 to +5.0 -0.5 to +5.0 or VCC 800 +12 10:1 -40 to +150 200 VDC VDC V mA dBm Typ. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). C C Specification Min. Caution! ESD sensitive device. Max. Unit T=25 C, VCC =4.8V, VPC =4.0V, Freq=824MHz to 849MHz Overall Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output OFF Isolation Second Harmonic Maximum Linear Output Power Adjacent Channel Power Rejection @ 885 kHz Adjacent Channel Power Rejection @ 1.98 MHz Maximum CW Output Power Operating Case Temperature Ambient Operating Temperature Junction to Case Thermal Resistance Input VSWR Output Load VSWR Condition 800 27 40 50 23 31.5 -30 -30 824 to 849 29 45 55 27 -30 28.5 -46 950 31 29 -44 dBc -58 -56 dBc 110 100 dBm C C C/W 32 85 MHz dB % % dB dBc VPC =0V,PIN =+6dBm Including Second Harmonic Trap IS-95A CDMA Modulation Pout = 28 dBm ACPR can be improved by trading off efficiency. Pout = 28 dBm Pout = 31 dBm, Efficiency = 55% <2:1 10:1 No oscillations Power Down Turn On/Off Time Total Current VPC "OFF" Voltage VPC "ON" Voltage 0.2 3.6 4.0 100 10 0.5 Vcc ns A V V 4.8 40 15 5.0 100 20 V mA mA "OFF" State Power Supply Power Supply Voltage Idle Current Current into VPC pin 2-110 4.2 Operating voltage VPC =4.0V "ON" State Rev B10 060908 RF2132 Pin 1 Function VCC1 2 3 NC RF IN 4 GND 5 6 GND GND 7 8 GND PC 9 10 11 12 13 14 15 16 GND RF OUT RF OUT GND GND RF OUT RF OUT GND Rev B10 060908 Description Interface Schematic Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an inductor to VCC, with a decoupling capacitor on the VCC side. The value of the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for 950MHz. Instead of an inductor, a high impedance microstrip line can be used. Not Connected. RF input. This is a 50 input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 4. VCC RF IN From Bias Stages See pin 1. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the batwing and other ground contacts. See evaluation board layout. Same as pin 6. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V or less at room temperature. During normal operation this pin is the power control. Control range varies from about 2V for 0dBm to VCC for +31dBm RF output power. The maximum power that can be achieved depends on the actual output matching. PC should never exceed 5.0V or VCC, whichever is the lowest. PC To RF Transistors Same as pin 4. RF Output and power supply for the output stage. The four output pins are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 10. RF OUT From Bias Stages See pin 10. Same as pin 4. Same as pin 4. Same as pin 10. See pin 10. Same as pin 10. See pin 10. Same as pin 4. 2-111 RF2132 Application Schematic VCC 1 nF Vcc = 4.8 V Vpc = 4.0 V 100 pF 1.8 nH 100 pF 1 16 2 15 3 14 4 13 5 12 6.8 nH 100 pF RF IN 3 pF 18 k 6 11 100 pF 3.3 nH BIAS VPC RF OUT 7 10 8 9 12 pF 4.3 pF 1 nF Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) Power supply filtering/bypassing for V cc Vcc = 4.8 V Vpc = 4.0 V P1-1 C1 100 nF Interstage tuning (L1) for centering output frequency Adds bias to the first amplifier stage for improved linearity R1 18 k C13 1 nF C4 1 nF C5 100 pF 1 16 2 15 3 14 4 13 5 12 P1 P1-1 P1-3 6 P1-3 C12 3.3F C3 1 F L1 1.8 nH C6 100 pF C8 RF IN 33 pF J1 C2 11 F BIAS C7 3 pF 11 7 10 8 9 C14 100 pF L2 6.8 nH VCC 2 GND 3 PC Bias inductor for the amplifier output stage Harmonic trap: C7 series resonate internal bondwires of pins 14 and 1 2f0 to effectively short out 2nd harm for optimum gain and efficiency L3 3.3 nH C10 12 pF 1 C11 4.3 pF C9 100 pF RF OUT J2 Matching network for optimum load impedance Power supply filtering/bypassing PCfor V 2-112 Rev B10 060908 RF2132 Evaluation Board Layout 2" x 2" Rev B10 060908 2-113 RF2132 RF2132 Evaluation Board Vcc = 4.8 V, Vpc = 4.0 V, Frequency = 836 MHz, IS-95A CDMA 90 350 80 ACPR 1.98 MHz 300 ACPR 885 kHz 250 60 200 50 Current 40 150 Current (mA) ACPR (-dBc), Efficiency (%) 70 30 100 20 Total Efficiency 50 10 0 0 28 26 24 22 20 18 16 14 12 10 Pout (dBm) 2-114 Rev B10 060908