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TSZ2211114001
Datasheet
4.0V to 5.5V, 2.0A 1ch
Synchronous Buck Converter integrated FET
BD9111NV
General Description
ROHM’s high efficiency step-down switching regulator
BD9111NV is a power supply designed to produce a
low voltage including 3.3 volts from 5 volts power
supply line. Offers high efficiency with our original
pulse skip control technology and synchronous rectifier.
Employs a current mode control system to provide
faster transient response to sudden change in load.
Features
Offers fast transient response with current mode
PWM control system.
Offers highly efficiency for all load range with
synchronous rectifier (Nch/Pch FET) and SLLMTM
(Simple Light Load Mode)
Incorporates soft-start function.
Incorporates thermal protection and ULVO
functions.
Incorporates short-current protection circuit with
time delay function.
Incorporates shutdown function
Key Specifications
Input voltage range: 4.5V to 5.5V
Output voltage range: 3.250V to 3.350V
Output current: 2.0A (Max.)
Switching frequency: 1MHz(Typ.)
Pch FET ON resistance: 200mΩ(Typ.)
Nch FET ON resistance: 150mΩ(Typ.)
Standby current: 2.0μA (Max.)
Operating temperature range: -25 to +105
Package
SON008V5060: 5.00mm x 6.00mm x 1.00mm
Applications
Power supply for LSI including DSP, Micro computer
and ASIC
Typical Application Circuit
Fig.1 Typical Application Circuit
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays.
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TSZ2211115001
BD9111NV
Datasheet
Pin Configuration
Pin Description
Pin No.
Pin name
PIN function
1
VOUT
Output voltage pin
2
VCC
VCC power supply input pin
3
ITH
GmAmp output pin/Connected phase compensation capacitor
4
GND
Ground
5
PGND
Nch FET source pin
6
SW
Pch/Nch FET drain output pin
7
PVCC
Pch FET source pin
8
EN
Enable pin(Active High)
Block Diagram
Output
5V
Input
PVCC
PGND
SW
GND
Gm Amp. 2.2µH
VCC
R
S
Q
OSC
UVLO
TSD
22µF
VCC
VCC
CLK
SLOPE
EN
Current
Comp 22µF
8
7
2
6
5
4
Soft
Start
Current
Sense/
Protect
+
Driver
Logic
VREF
ITH
RITH CITH
3
SCP
VOUT
1
Fig.3 Block Diagram
(Top View)
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TSZ2211115001
BD9111NV
Datasheet
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Ratings
Unit
VCC Voltage
VCC
-0.3 to +7 *1
V
PVCC Voltage
PVCC
-0.3 to +7 *1
V
EN Voltage
VEN
-0.3 to +7
V
SW,ITH Voltage
VSW,VITH
-0.3 to +7
V
Power Dissipation 1
Pd1
900*2
mW
Power Dissipation 2
Pd2
3900*3
mW
Operating temperature range
Topr
-25 to +105
Storage temperature range
Tstg
-55 to +150
Maximum junction temperature
Tjmax
+150
*1 Pd should not be exceeded.
*2 Derating in done 7.2mW/ for temperatures above Ta=25, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB (the density of copper:3%)
*3 Derating in done 31.2mW/ for temperatures above Ta=25, Mounted on JESD51-7.
Operating Ratings (Ta=25)
Parameter
Symbol
Ratings
Unit
Min.
Typ.
Max.
VCC Voltage
VCC *4
4.5
5.0
5.5
V
PVCC Voltage
PVCC *4
4.5
5.0
5.5
V
EN Voltage
VEN
0
-
VCC
V
SW average output current
Isw *4
-
-
2.0
A
*4 Pd should not be exceeded.
Electrical Characteristics (Ta=25, VCC=PVCC=3.3V, EN=VCC.)
Parameter
Symbol
Limits
Unit
Conditions
Min.
Typ.
Max.
Standby current
ISTB
-
0
10
μA
EN=GND
Bias current
ICC
-
250
450
μA
EN Low voltage
VENL
-
GND
0.8
V
Standby mode
EN High voltage
VENH
2.0
VCC
-
V
Active mode
EN input current
IEN
-
1
10
μA
VEN=5V
Oscillation frequency
FOSC
0.8
1
1.2
MHz
Pch FET ON resistance
RONP
-
200
320
PVCC=5V
Nch FET ON resistance
RONN
-
150
270
PVCC=5V
Output voltage
VOUT
3.250
3.300
3.350
V
ITH SInk current
ITHSI
10
20
-
μA
VOUT=3.6V
ITH Source Current
ITHSO
10
20
-
μA
VOUT=3.0V
UVLO threshold voltage
VUVLO1
3.6
3.8
4.0
V
VCC=5→0V
UVLO release voltage
VUVLO2
3.65
3.90
4.2
V
VCC=0→5V
Soft start time
TSS
0.5
1
2
ms
Timer latch time
TLATCH
1
2
3
ms
SCP/TSD operated
Output Short circuit Threshold Voltage
VSCP
-
1.65
2.31
VOUT
VOUT=3.3→0V
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TSZ2211115001
BD9111NV
Datasheet
Typical Performance Curves
Fig.4 Vcc-Vout
Fig.6 Iout-Vout
Fig.7 Ta-VOUT
Fig.5 Ven-Vout
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TSZ2211115001
BD9111NV
Datasheet
Fig.10 Ta-RONN, RONP
Fig.11 Ta-VEN
Fig.8 Efficiency
Fig.9 Ta-FOSC
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BD9111NV
Datasheet
Fig.14 Soft start waveform
Fig.15 SW waveform Io=10mA
Fig.12 Ta-ICC
Fig.13 Vcc-Fosc
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TSZ2211115001
BD9111NV
Datasheet
Fig.18 Transient response
Io=2A1A (10μs)
Fig.16 SW waveform Io=200mAs
Fig.17 Transient response
Io=1A2A (10μs)
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TSZ2211115001
BD9111NV
Datasheet
Application Information
Operation
BD9111NV is a synchronous rectifying step-down switching regulator that achieves faster transient response by employing
current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode for heavier load,
while it utilizes SLLM (Simple Light Load Mode) operation for lighter load to improve efficiency.
Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power
dissipation of the set is reduced.
Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a
N-channel MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp)
receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback
control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the
P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control
repeat this operation.
SLLM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse
is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation
without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or
vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is
tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces the
switching dissipation and improves the efficiency.
Fig.19 Diagram of current mode PWM control
Fig.20 PWM switching timing chart
Fig.21 SLLMTM switching timing chart
Current
Comp
SET
RESET
SW
VOUT
PVCC
GND
GND
GND
IL(AVE)
VOUT(AVE)
SENSE
FB
Current
Comp
SET
RESET
SW
VOUT
PVCC
GND
GND
GND
0A
VOUT(AVE)
SENSE
FB
IL
Not switching
IL
OSC
Level
Shift
Driver
Logic
R
Q
S
IL
SW
ITH
Current
Comp
Gm Amp.
SET
RESET
FB
Load
SENSE
VOUT
VOUT
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TSZ2211115001
BD9111NV
Datasheet
Description of Operations
Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited during
startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0μF (Typ.).
UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width
of 100mV (Typ.) is provided to prevent output chattering.
Fig.22 Soft start, Shutdown, UVLO timing chart
Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for
the fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking
UVLO.
Fig.23 Short-current protection circuit with time delay timing chart
t2=TLATCH
Output OFF
latch
EN
VOUT
Output Short circuit
Threshold Voltage
IL
Standby
mode
Operating mode
Operating mode
EN
Timer latch
EN
Standby
mode
IL Limit
t1<TLATCH
Hysteresis 100mV
Tss
Tss
Tss
Soft start
Standby mode
Operating mode
Standby
mode
Operating mode
Standby
mode
Operating mode
Standby mode
UVLO
EN
UVLO
UVLO
VCC
EN
VOUT
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TSZ2211115001
BD9111NV
Datasheet
Information on Advantages
Advantage 1Offers fast transient response with current mode control system.
Voltage drop due to sudden change in load was reduced by about 50%.
Fig.24 Comparison of transient response
Advantage 2 Offers high efficiency for all load range.
For lighter load:
Utilizes the current mode control mode called SLLM for lighter load, which reduces various dissipation such as
switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and
on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
For heavier load:
Utilizes the synchronous rectifying mode and the low on-resistance
MOS FETs incorporated as power transistor.
ON resistance of P-channel MOS FET : 200mΩ(Typ.)
ON resistance of N-channel MOS FET : 160mΩ(Typ.)
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
Advantage 3:・Supplied in smaller package due to small-sized power MOS FET incorporated.
Reduces a mounting area required.
Fig.26 Example application
Fig.25 Efficiency
Conventional product (Load response IO=0.1A0.6A)
BD9111NV (Load response IO=1A2A)
Output capacitor Co required for current mode control: 22μF ceramic capacitor
Inductance L required for the operating frequency of 1 MHz: 2.2μH inductor
(BD9111NV:Co=22μF, L=2.2μH)
0.001
0.01
0.1
1
0
50
100
PWM
SLLM
inprovement by SLLM system
improvement by synchronous rectifier
Efficiency η[%]
Output current Io[A]
VOUT
IOUT
VOUT
IOUT
160mV
100mV
RITH
L
Co
VOUT
CITH
VCC
Cin
10mm
15mm
RITH
CITH
CIN
CO
L
DC/DC
Convertor
Controller
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TSZ2211115001
BD9111NV
Datasheet
Switching Regulator Efficiency
Efficiency ŋ may be expressed by the equation shown below:
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FETPD(I2R)
2) Gate charge/discharge dissipationPD(Gate)
3) Switching dissipationPD(SW)
4) ESR dissipation of capacitorPD(ESR)
5) Operating current dissipation of ICPD(IC)
1)PD(I2R)=IOUT2×(RCOIL+RON) (RCOIL]DC resistance of inductor, RON[Ω]ON resistance of FET, IOUT[A]Output current.)
2)PD(Gate)=Cgs×f×V (Cgs[F]Gate capacitance of FET,f[Hz]Switching frequency,V[V]Gate driving voltage of FET)
4)PD(ESR)=IRMS2×ESR (IRMS[A]Ripple current of capacitor,ESR[Ω]Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]Circuit current.)
Consideration on Permissible Dissipation and Heat Generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
If VCC=5V, VOUT=3.3V, RONP=0.2Ω, RONN=0.16Ω
IOUT=2A, for example,
D=VOUT/VCC=3.3/5.0=0.66
RON=0.66×0.20+(1-0.66)×0.16
=0.132+0.0544
=0.1864[Ω]
P=22×0.18640.7456W]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater.
With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
η=
VOUT×IOUT
Vin×Iin
×100[%]=
POUT
Pin
×100[%]=
POUT
POUT+PDα
×100[%]
Vin2×CRSS×IOUT×f
IDRIVE
3)PD(SW)=
(CRSS[F]Reverse transfer capacitance of FET,IDRIVE[A]Peak current of gate.)
P=IOUT2×RON
RON=D×RONP+(1-D)RONN
DON duty (=VOUT/VCC)
RCOILDC resistance of coil
RONPON resistance of P-channel MOS FET
RONNON resistance of N-channel MOS FET
IOUTOutput current
0
25
50
75
100
125
150
0
2.0
3.0
4.0
0.90W
3.9W
105
1.0
0.64W
Fig.27 Thermal derating curve
(SON008V5060)
Power dissipation:Pd [W]
Ambient temperature:Ta []
for SON008V5060
JEDEC 4 layer board 76.2×114.3×1.6mm
θj-a=32.1/W
for SON008V5060
ROHM standard 1 layer board 70×70×1.6mm
θj-a=138.9/W
IC only
θj-a=195.3/W
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TSZ2211115001
BD9111NV
Datasheet
Selection of Components Externally Connected
1. Selection of inductor (L)
* Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.
If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×2A=0.6A, for example,(BD9111NV)
* Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for better efficiency.
2. Selection of output capacitor (CO)
3. Selection of input capacitor (Cin)
A low ESR 22μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
The inductance significantly depends on output ripple current.
As seen in the equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
ΔIL=
(VCC-VOUT)×VOUT
L×VCC×f
[A]・・・(1)
Appropriate ripple current at output should be 20% more or less of the
maximum output current.
ΔIL=0.3×IOUTmax. [A]・・・(2)
L=
(VCC-VOUT)×VOUT
ΔIL×VCC×f
[H]・・・(3)
(ΔIL: Output ripple current, and f: Switching frequency)
Output capacitor should be selected with the consideration on the stability
region and the equivalent series resistance required to smooth ripple voltage.
Output ripple voltage is determined by the equation (4)
ΔVOUT=ΔIL×ESR [V]・・・(4)
(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
*Rating of the capacitor should be determined allowing sufficient margin
against output voltage. Less ESR allows reduction in output ripple voltage.
22μF to 100μF ceramic capacitor is recommended.
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage.
The ripple current IRMS is given by the equation (5):
Fig.29 Output capacitor
(5.0-3.3)×3.3
0.6×5.0×1M
L=
=1.87μ → 2.2[μH]
Fig.30 Input capacitor
ΔIL
VCC
IL
L
Co
VOUT
Fig.28 Output ripple current
IL
VCC
L
Co
VOUT
ESR
VCC
L
Co
VOUT
Cin
IRMS=IOUT×
VOUT(VCC-VOUT)
VCC
[A]・・・(5)
When Vcc is twice the VOUT, IRMS=
IOUT
2
< Worst case > IRMS(max.)
IRMS=2×
3.3(5.0-3.3)
5.0
=0.947[ARMS]
If VCC=5.0V, VOUT=3.3V, and IOUTmax.=2A, (BD9111NV)
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BD9111NV
Datasheet
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
Fig.31 Open loop gain characteristics
Fig.32 Error amp phase compensation characteristics
fp=
2π×RO×CO
1
fz(ESR)=
2π×ESR×CO
1
Pole at power amplifier
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
fp(Min.)=
2π×ROMax.×CO
1
[Hz]←with lighter load
fp(Max.)=
2π×ROMin.×CO
1
[Hz] ←with heavier load
Zero at power amplifier
fz(Amp.)=
2π×RITH×CITH
1
GND,PGND
SW
VCC,PVCC
EN
VOUT
ITH
VCC
VOUT
Cin
RITH
CITH
L
ESR
CO
RO
VOUT
Fig.33 Typical application
fz(Amp.)= fp(Min.)
2π×RITH×CITH
1
=
2π×ROMax.×CO
1
Gain
[dB]
Phase
[deg]
A
0
0
-90
A
0
0
-90
fz(Amp.)
fp(Min.)
fp(Max.)
fz(ESR)
IOUTMin.
IOUTMax.
Gain
[dB]
Phase
[deg]
Increasing capacitance of the output capacitor lowers the
pole frequency while the zero frequency does not change.
(This is because when the capacitance is doubled, the
capacitor ESR reduces to half.)
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TSZ2211115001
BD9111NV
Datasheet
BD9111NV Cautions on PC Board Layout
Fig.34 Layout diagram
For the sections drawn with heavy line, use thick conductor pattern as short as possible.
Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to
the pin PGND.
Lay out CITH and RITH between the pins ITH and GND as near as possible with least necessary wiring.
SON008V5060 (BD9111NV) has thermal FIN on the reverse of the package.
The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.
Recommended Components Lists on Above Application
Symbol
Part
Value
Manufacturer
Series
L
Coil
2.2uH
TDK
LTF5022-2R2N3R2
CIN
Ceramic capacitor
22uF
Kyocera
CM32X5R226M10A
CO
Ceramic capacitor
22uF
Kyocera
CM316B226M06A
CITH
Ceramic capacitor
680pF
murata
GRM18 Series
RITH
Resistance
12
Rohm
MCR03 Series
* The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on your
application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing the
depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode
established between the SW and PGND pins.
VOUT
VCC
ITH
GND
EN
PVCC
SW
PGND
VCC
RITH
GND
Co
CIN
VOUT
EN
L
CITH
1
2
3
4
8
7
6
5
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TSZ2211115001
BD9111NV
Datasheet
I/O Equivalence Circuit
Fig.35 I/O equivalence circuit
EN
SW
SW pin
PVCC
PVCC
PVCC
ITH
ITH pin
VCC
VCC
VOUT
10kΩ
VOUT pin
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TSZ2211115001
BD9111NV
Datasheet
Resistor
Transistor (NPN)
N
N
N
P+
P+
P
P substrate
GND
Parasitic element
Pin A
N
N
P+
P+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Parasitic
element
Pin B
Other adjacent elements
E
B
C
GND
Parasitic
element
Operational Notes
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the
absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
4. Operation in Strong electromagnetic field
Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.
5. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be
used thereafter for any operation originally intended.
6. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
7. Input to IC terminals
This is a monolithic IC with P+ isolation between P-substrate and each element as illustrated below.
This P-layer and the N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 36.
P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side),
or GND>Terminal B (at transistor side); and
if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Fig.36 Simplified structure of monorisic IC
8. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
9. Selection of inductor
It is recommended to use an inductor with a series resistance element (DCR) 0.1Ω or less. Note that use of a high DCR
inductor will cause an inductor loss, resulting in decreased output voltage. Should this condition continue for a specified
period (soft start time + timer latch time), output short circuit protection will be activated and output will be latched OFF.
When using an inductor over 0.1Ω, be careful to ensure adequate margins for variation between external devices and this
IC, including transient as well as static characteristics. Furthermore, in any case, it is recommended to start up the output
with EN after supply voltage is within operation range.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com TSZ02201-0J3J0AJ00100-1-2
© ROHM Co., Ltd. All rights reserved. 17/17 02.MAR.2012 Rev.001
TSZ2211115001
BD9111NV
Datasheet
Ordering Information
B
D
9
1
1
1
N
V
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E2
Package
NV : SON008V5060
Packaging and forming specification
E2: Embossed tape and reel
(SON008V5060)
Physical Dimension Tape and Reel Information
Marking Diagram
SON008V5060 (TOP VIEW)
B D 9 1 1 1
Part Number Marking
LOT Number
1PIN MARK
Datasheet
Datasheet
Notice - Rev.001
Notice
Precaution for circuit design
1) The products are designed and produced for application in ordinary electronic equipment (AV equipment, OA
equipment, telecommunication equipment, home appliances, amusement equipment, etc.). If the products are to be
used in devices requiring extremely high reliability (medical equipment, transport equipment, aircraft/spacecraft,
nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose
malfunction or operational error may endanger human life and sufficient fail-safe measures, please consult with the
ROHM sales staff in advance. If product malfunctions may result in serious damage, including that to human life,
sufficient fail-safe measures must be taken, including the following:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits in the case of single-circuit failure
2) The products are designed for use in a standard environment and not in any special environments. Application of the
products in a special environment can deteriorate product performance. Accordingly, verification and confirmation of
product performance, prior to use, is recommended if used under the following conditions:
[a] Use in various types of liquid, including water, oils, chemicals, and organic solvents
[b] Use outdoors where the products are exposed to direct sunlight, or in dusty places
[c] Use in places where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2,
and NO2
[d] Use in places where the products are exposed to static electricity or electromagnetic waves
[e] Use in proximity to heat-producing components, plastic cords, or other flammable items
[f] Use involving sealing or coating the products with resin or other coating materials
[g] Use involving unclean solder or use of water or water-soluble cleaning agents for cleaning after soldering
[h] Use of the products in places subject to dew condensation
3) The products are not radiation resistant.
4) Verification and confirmation of performance characteristics of products, after on-board mounting, is advised.
5) In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
6) De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta).
When used in sealed area, confirm the actual ambient temperature.
7) Confirm that operation temperature is within the specified range described in product specification.
8) Failure induced under deviant condition from what defined in the product specification cannot be guaranteed.
Precaution for Mounting / Circuit board design
1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the remainder of flux may negatively affect
product performance and reliability.
2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
Company in advance.
Regarding Precaution for Mounting / Circuit board design, please specially refer to ROHM Mounting specification
Precautions Regarding Application Examples and External Circuits
1) If change is made to the constant of an external circuit, allow a sufficient margin due to variations of the characteristics
of the products and external components, including transient characteristics, as well as static characteristics.
2) The application examples, their constants, and other types of information contained herein are applicable only when
the products are used in accordance with standard methods. Therefore, if mass production is intended, sufficient
consideration to external conditions must be made.
Datasheet
Datasheet
Notice - Rev.001
Precaution for Electrostatic
This product is Electrostatic sensitive product, which may be damaged due to Electrostatic discharge. Please take proper
caution during manufacturing and storing so that voltage exceeding Product maximum rating won't be applied to products.
Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from
charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the products are stored in the following places:
[a] Where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] Where the temperature or humidity exceeds those recommended by the Company
[c] Storage in direct sunshine or condensation
[d] Storage in high Electrostatic
2) Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using products of which storage time is
exceeding recommended storage time period .
3) Store / transport cartons in the correct direction, which is indicated on a carton as a symbol. Otherwise bent leads may
occur due to excessive stress applied when dropping of a carton.
4) Use products within the specified time after opening a dry bag.
Precaution for product label
QR code printed on ROHM product label is only for internal use, and please do not use at customer site. It might contain a
internal part number that is inconsistent with an product part number.
Precaution for disposition
When disposing products please dispose them properly with a industry waste company.
Precaution for Foreign exchange and Foreign trade act
Since concerned goods might be fallen under controlled goods prescribed by Foreign exchange and Foreign trade act,
please consult with ROHM in case of export.
Prohibitions Regarding Industrial Property
1) Information and data on products, including application examples, contained in these specifications are simply for
reference; the Company does not guarantee any industrial property rights, intellectual property rights, or any other
rights of a third party regarding this information or data. Accordingly, the Company does not bear any responsibility for:
[a] infringement of the intellectual property rights of a third party
[b] any problems incurred by the use of the products listed herein.
2) The Company prohibits the purchaser of its products to exercise or use the intellectual property rights, industrial
property rights, or any other rights that either belong to or are controlled by the Company, other than the right to use,
sell, or dispose of the products.