SFH4232-Z - OSRAM Opto Semiconductors

SFH 4232

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

High Power Infrared Emitter (850 nm)

Lead (Pb) Free Product - RoHS Compliant

Vorläufige Daten / Preliminary D ata

2009-09-08 1

Wesentliche Merkmale

• IR-Lichtquelle mit hohem Wirkungsgrad

• Chipgröße (emittierende Fläche) 1 x 1 mm2

• max. Gleichstrom 1 A

• niedriger Wärmewiderstand (9 K/W)

• Schwerpunktswellenlänge 850 nm

•ESD-sicher bis 2 kV nach JESD22-A114-E

Anwendungen

• Infrarotbeleuchtung für Kamera s

• Überwachungssysteme

• Fahrer-Assistenz Systeme

• Beleuchtung für Bilderkennungssysteme

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile

hochkonzentrierte, nicht sichtbare Infrarot-

Strahlung, die gefährlich für das menschliche

Auge sein kann. Produkte, die diese Bauteile

enthalten, müssen gemäß den Sicherheits-

richtlinien der IEC-Normen 60825-1 und 62471

behandelt werden.

Typ

Type Bestellnummer

Ordering Code Gesamtstrahlungsfluss1) (IF = 1A, tp = 10 ms)

Total Radiant Flux1)

Φe (mW)

SFH 4232 Q65110A8754 ≥ 320 (typ. 530)

1) gemessen mit Ulbrichtkugel / measured with integrating sphere

Features

• IR lightsource with high efficiency

• die-size (emitting area) 1 x 1 mm2

• max. DC-current 1 A

• Low thermal resistance (9 K/W)

• Center of spectral emission at 850 nm

• ESD save up to 2 kV acc. to JESD22-A114-E

Applications

• Infrared Illumination for cameras

• Surveillance systems

• Driver assistance systems

• Machine vision systems

Safety Advices

Depending on the mode of operation, these

devices emit highly concentrated non visible

infrared light which can be hazardous to the

human eye. Products which incorporate these

devices have to follow the safety precautions

given in IEC 60825-1 and IEC 62471.

2009-09-08 2

SFH 4232

Grenzwerte (TA = 25 °C)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top , Tstg – 40 … + 100 °C

Sperrschichttemperatur

Junction temperature TJ+ 125 °C

Sperrspannung

Reverse voltage VR1 V

Vorwärtsgleichstrom

Forward current IF1 A

Stoßstrom, tp < 200 µs, D = 0

Surge current IFSM 5 A

Leistungsaufnahme

Power consumption Ptot 1.8 W

Wärmewiderstand Sperrschicht - Lötstelle

Thermal resistance junction - soldering point RthJS 9K/W

Kennwerte (TA = 25 °C)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

IF = 1 A, tp = 10 ms

λpeak 860 nm

Schwerpunktswellenlänge der Strahlung

Centroid wavelength

IF = 1 A, tp = 10 ms

λcentroid 850 nm

Spektrale Bandbreite bei 50% von Imax

Spectral bandwidth at 50% of Imax

IF = 1 A, tp = 10 ms

Δλ 30 nm

Abstrahlwinkel

Half angle ϕ± 60 Grad

deg.

Aktive Chipfläche

Active chip area A1mm2

Abmessungen der aktiven Chipfläche

Dimension of the active chip a rea L × B

L × W1 × 1 mm²

SFH 4232

2009-09-08 3

Schaltzeiten, Ie von 10% auf 90% und von 90%

auf 10%, IF = 5 A, RL = 50 Ω

Switching times, Ιe from 10% to 90% and from

90% to 10%, IF = 5 A, RL = 50 Ω

tr / tf7 / 14 ns

Durchlassspannung

Forward voltage

IF = 1 A, tp = 100 µs

IF = 5 A, tp = 100 µs

1.5 (< 1.8)

2.0 (< 2.9)

Strahlstärke

Radiant intensity

IF = 1 A, tp = 100 μs

Ie typ 180 mW/sr

Temperaturkoeffizient von Ie bzw. Φe

Temperature coefficient of Ie or Φe

IF = 1 A, tp = 10 ms

TCI– 0.3 %/K

Temperaturkoeffizient von VF

Temperature coefficient of VF

IF = 1 A, tp = 10 ms

TCV– 1 mV/K

Temperaturkoeffizient von λ

Temperature coefficient of λ

IF = 1 A, tp = 10 ms

TCλ,centroid + 0.3 nm/K

Kennwerte (TA = 25 °C)

Characteristics (cont’d)

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

2009-09-08 4

SFH 4232

Abstrahlcharakteristik

Radiation Characteristics Irel = f (ϕ)

Gesamtstrahlungsfluss1) Φe

Total Radiant Flux1) Φe

Bezeichnung

Parameter Symbol Werte

Values Einheit

Unit

-CB -DA -DB

Gesamtstrahlungsfluss

Total Radiant Flu x

IF = 1 A, tp = 10 ms

Φe min

Φe max

320

500 400

630 500

800 mW

1) Nur eine Gruppe in einer Verp ackungseinheit (Streuung kleiner 1.6:1) /

Only one group in one packing unit (variation lower 1.6:1)

0.2

0.4

1.0

0.8

0.6

1.0 0.8 0.6 0.4

0˚10˚20˚40˚ 30˚

OHL01660

50˚

60˚

70˚

80˚

90˚

100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

SFH 4232

2009-09-08 5

Relative spektrale Emission

Relative Spectral Emission

Irel = f (λ)

Max. zulässiger Durchlassstrom

Max. Permissible Forward Current

IF = f (TA), RthJS = 9 K/W

700

0nm

OHF04132

100

950750 800 850

rel

0˚C

OHF03863

20 40 60 80 120

0.2

0.4

0.6

0.8

1.2

1.0

Durchlassstrom

Forward Current

IF = f (VF)

Single pulse, tp = 100 μs

Zulässige Impulsbelastbarkeit

Permissible Pulse Handling

Capability IF = f (tp), TS = 85 °C,

Duty cycle D = parameter

OHF03847

101

10-1

10-2

0V0.5 1 1.5 2 2.5

-5

OHF04177

-4

-3

-2

-1

1010

DTT

0.01

0.33

0.5

0.2

0.1

0.02

0.005

0.05

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.5

Relativer Gesamtstrahlungsfluss

Relative Total Radiant Flux

Φe/Φe(1000mA) = f (IF)

Single pulse, tp = 100 μs

OHF03848

10-3 A

101

10-1

-2

10 10 0

10 1

1055

-2 -1

Φ(1 A)

Φe

2009-09-08 6

SFH 4232

Maßzeichnung1)

Package Outlines

Kathodenkennung: Markierung

Cathode mark: mark

Gewicht / Approx. weight: 0.2 g

Gurtung / Polarität und Lage Verpackungseinheit 800/Rolle, ø180 mm

Method of Taping / Polarity and Orientation Packing unit 800/reel, ø180 mm

1) Maße in mm (inch) / Dimensions in mm (inch)

GPLY7072

6.2 (0.244)

5.8 (0.228)

1.9 (0.075)

1.7 (0.067)

Cathode

(R0.85 (0.033))

11.2 (0.441)

10.8 (0.425)

1.2 (0.047)

0.8 (0.031)

0...0.1 (0.004)

0.29 (0.011)

0.24 (0.009)

6.8 (0.268)

7.2 (0.283)

1.1 (0.043)

0.9 (0.035)

1.6 (0.063)

2.0 (0.079)

(ø4.2 (0.165))

ø0.81 (0.031)

4.25 (0.167)

5.35 (0.210)

5.25 (0.206)

ø0.73 (0.028)

4.15 (0.163) 0.65 (0.026)

0.45 (0.018)

OHAY0508

1.55 (0.061) 2 (0.079)

4 (0.157)

6.35 (0.250)

8 (0.315)

1.75 (0.069)

11.5 (0.453)

12.4 (0.488)

24 (0.945)

0.3 (0.012)

1.9 (0.075)

7.35 (0.289)

Cathode/Collector Side

SFH 4232

2009-09-08 7

Empfohlenes Lötpaddesign

Recommended Solder Pad Design

Solder resist

Freies Kupfer

Bare Copper

Lötpasten Schablone

Solder paste stencil

Lötstopplack

OHAY0681

0.3 (0.012)

Kupfer

Copper

1.6 (0.063)

11.6 (0.457)

12.0 (0.472)

2.3 (0.091)

10 (0.394)

1.6 (0.063)

11.6 (0.457)

3 Lötstellen

3 solder points

Thermal enhanced PCB

Thermisch optimiertes PCB

ø4.0 (0.157)

Heatsink attach

ø4.0 (0.157)

ø2.5 (0.098)

Achtung:

Anode und Heatsink sind ele ktrisch ve rb unden

Attention:

Anode and Heatsink are electrically connected

Footprint

2009-09-08 8

SFH 4232

Lötbedingungen Vorbehandlung nach JEDEC Level 4

Soldering Conditions Preconditioning acc. to JEDEC Level 4

Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)

Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)

Published by

OSRAM Opto Semiconductors GmbH

Leibnizstraße 4, D-93055 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organiza tion.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.

1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected

to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.

2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

OHLA0687

˚C

120 s max

100

150

200

250

300

Ramp Up

100 s max

50 100 150 200 250 300

Ramp Down

6 K/s (max)

3 K/s (max)

25 ˚C

30 s max

260 ˚C

+0 ˚C

-5 ˚C

245 ˚C

±5 ˚C

240 ˚C

255 ˚C

217 ˚C

Maximum Solder Profile

Recommended Solder Profile

235 ˚C

-0 ˚C

+5 ˚C

Minimum Solder Profile

10 s min