SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM A B C D E F G H R J K L M V N O P Q R H S T U V P F U FEATURES E S G : hFE=1000(Min.), B High DC Current Gain. VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112F. K L D CHARACTERISTIC J M MAXIMUM RATING (Ta=25 T L D ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -2 Pulse ICP -4 Base Current DC IB -50 Collector Power Ta=25 Dissipation Tc=25 N N T Collector Current Junction Temperature Storage Temperature Range 3 Q 2 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS mA 2 EQUIVALENT CIRCUIT W 20 Tj 150 Tstg -65 150 CHARACTERISTIC 1 A PC ELECTRICAL CHARACTERISTICS (Ta=25 O T C B R1 R2 = 10k = 0.6k E ) SYMBOL TEST CONDITION MIN. TYP. MAX. ICEO VCE=-50V, IB=0 - - -2 ICBO VCB=-100V, IE=0 - - -1 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 hFE VCE=-4V, IC=-1A 1000 - - DC Current Gain VCE=-4V, IC=-2A 500 - - Collector Cut-off Current MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX 3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 UNIT mA mA Collector-Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.5 V Base-Emitter On Voltage VBE(ON) VCE=-4V, IC=-2A - - -2.8 V VCB=-10V, IE=0, f=0.1MHz - - 200 pF Collector Output Capacitance 2002. 6. 25 Revision No : 0 Cob 1/2 TIP117F h FE - I C -5 0 00 -4 -3 0A 00A -4 A -300 A -50 -1 -900A -800A -700A -600A -200A I B =-100A -2 -1 0 -2 -1 -3 -4 VCE =-4V 30K 10K 300 100 30 10 -0.01 -5 -0.1 -1 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) , V CE(sat) - I C C ob - V CB 100 I C /I B =500 30 CAPACITANCE Cob (pF) SATURATION VOLTAGE VBE(sat) ,V CE(sat) (V) 100K DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) I C - V CE 10 3 V BE(sat) 1 VCE(sat) 0.3 0.1 0.01 0.1 1 1k 500 300 f=0.1MHz 100 50 30 10 5 3 1 -0.01 10 -1 -0.1 -10 -100 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA P D - Ta 10 20 15 10 5 0 0 50 100 150 CASE TEMPERATURE Ta ( C) 2002. 6. 25 Revision No : 0 200 3 DC OPERATION Tc=25 C 1 0.5 SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 0.1 s 1m COLLECTOR CURRENT I C (A) 25 I C MAX(PULSED) 5 s 5m POWER DISSIPATION P D (W) 30 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/2