MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM90DZ/CZ-M,-H Average on-state current ............ 90A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 no t fo Re rN c o ew m m De e n sig d n * IT (AV) * VRRM * * * * APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 (DZ) 80 K2 G2 2-6.5 A1K2 CR1 K1 20 K1 G1 3-M5 (CZ) K2 G2 Tab#110, t=0.5 A1 CR1 K1K2 A2 K1 G1 LABEL 30 9 CR2 21 20 A2 CR2 G1 6.5 17.5 K1 26 G2 12.5 K2 Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Voltage class Parameter M H Unit Repetitive peak reverse voltage 400 800 V Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V no t fo Re rN c o ew m m De e n sig d n VRRM VRSM Symbol Conditions Parameter Ratings Unit 140 A 90 A IT (RMS) RMS on-state current IT (AV) Average on-state current Single-phase, half-wave 180 conduction, TC=86C ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 1800 A I2t I2t for fusing Value for one cycle of surge current 1.4 x 104 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125C 100 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~+125 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Weight Typical value 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 15 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 15 mA VTM On-state voltage Tj=125C, ITM=270A, instantaneous meas. -- -- 1.3 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 15 -- 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.3 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.2 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT Tj=125C SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) no t fo Re rN c o ew m m De e n sig d n 2000 1600 10 2 7 5 3 2 1200 10 1 7 5 3 2 10 0 0.4 0.8 1.2 1.6 2.0 800 400 0 2.4 1 2 3 ON-STATE VOLTAGE (V) 0.20 0.15 0.10 0.05 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 130 180 120 60 90 =30 60 PER SINGLE ELEMENT 120 40 PER SINGLE ELEMENT CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) 0.25 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 80 360 RESISTIVE, INDUCTIVE LOAD 110 100 90 80 70 =30 60 90 120 180 60 20 0 0.30 TIME (s) RESISTIVE, INDUCTIVE LOAD 100 0.35 GATE CURRENT (mA) 360 120 TRANSIENT THERMAL IMPEDANCE (C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V 140 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.40 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 160 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 0 20 40 60 80 AVERAGE ON-STATE CURRENT (A) 100 50 0 20 40 60 80 100 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270 130 180 120 120 90 100 60 80 =30 60 360 40 20 PER SINGLE ELEMENT 200 40 60 100 0 130 30 40 PER SINGLE MODULE 20 60 80 100 120 140 160 40 80 120 160 110 105 100 95 360 90 80 200 =30 60 90 120 180 115 RESISTIVE, INDUCTIVE LOAD 85 0 40 PER SINGLE MODULE 80 120 240 180 RESISTIVE, INDUCTIVE LOAD 200 160 120 60 90 =30 120 80 40 CASE TEMPERATURE (C) (PER SINGLE MODULE) 125 360 360 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 =30 85 0 40 80 120 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) 200 LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 320 280 160 RMS ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 40 120 RMS ON-STATE CURRENT (A) 0 20 125 60 0 =30 60 90 180 270 DC 120 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) 80 0 70 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) RESISTIVE, INDUCTIVE LOAD 120 80 AVERAGE ON-STATE CURRENT (A) 360 140 90 AVERAGE ON-STATE CURRENT (A) 160 RESISTIVE, INDUCTIVE LOAD 100 50 80 100 120 140 160 180 AVERAGE ON-STATE POWER DISSIPATION (W) 20 CASE TEMPERATURE (C) 0 360 110 60 18 1 0 60 90 20 0 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 120 CASE TEMPERATURE (C) 140 = AVERAGE ON-STATE POWER DISSIPATION (W) no t fo Re rN c o ew m m De e n sig d n 160 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 200 80 0 40 60 90 120 180 80 120 160 200 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE 200 LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 90 120 no t fo Re rN c o ew m m De e n sig d n ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) 120 60 160 140 =30 120 100 360 80 60 RESISTIVE, INDUCTIVE LOAD 40 20 0 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) CASE TEMPERATURE (C) (PER SINGLE MODULE) 180 360 110 RESISTIVE, INDUCTIVE LOAD 100 90 =30 80 60 90 120 70 60 50 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999