File No. 217 URC Solid State Division RF Power Transistors 2N4440 Silicon N-P-N Overlay Transistor For Class A, B, or C VHF/UHF Military and Industrial Communications Equipment Features: a 5 W output min. at 400 MHz = 6.5 W output typ. at 225 MHz JEDEC TO-60 44x7 RCA-2N4440 is an epitaxial silicon n-p-n planar transistor emitter periphery for higher current or power, and a corre- of the overlay emitter-electrode construction. It is intended sponding decrease in emitter and collector areas for lower for Class A, B, and C rf amplifier, multiplier, or oscillator input and output capacitances. The overlay structure thus operation for military and industrial communications service offers greater power output, gain, efficiency, frequency capa- (175 to 400 MHz}. bility, and linearity. In the overlay structure, a number of individual emitter sites are connected in parallel and used in conjunction with a Formerly RCA Dev. No. TA2875. common collector region. When compared with other struc- tures, this arrangement provides a substantial increase in MAXIMUM RATINGS, Absolute-Maximum Values: *COLLECTOR-TO-BASE VOLTAGE ........ 0.0.00 cee ee eee VcBo 65 Vv *COLLECTOR-TO-EMITTER VOLTAGE: With base-emitter junction reverse-biased (VBE) =-1.5 V..... 0-2. ee VcEV 65 v * With base open 6. ee eee eee VcEO 40 Vv *EMITTER-TO-BASE VOLTAGE ........ 0.0.00 00 ee eee ee VEBO 4 Vv *CONTINUOUS COLLECTOR CURRENT ..........-0 0022 seers lo 1.5 A *CONTINUOUS BASE CURRENT ............- 2002-2 e eee tenes Ig 0.2 A *TRANSISTOR DISSIPATION: Py At case temperatures upto 26C we ee 11.6 Ww At case temperatures above 25C www eee See Fig. 2 *TEMPERATURE RANGE: Storage and operating(junction) .. 0.0.00... ee -65 to 200 c LEAD TEMPERATURE (During soldering): At distances > 1/32 in. (0.8 mm) from insulating wafer for 10s max .... 230 c *tn accordance with JEDEC registration data Secondary breakdown considerations limit maximum dc operating conditions. . .contact your RCA Representative for specific data. 87 6-72 2N4440 File No. 217 ELECTRICAL CHARACTERISTICS, At Case Temperature ( To! = 25C unless otherwise specified TEST CONDITIONS VOLTAGE CURRENT CHARACTERISTIC SYMBOL Vde mA de LIMITS UNITS Vee | Voe | Vee | te | 'p le MIN. | MAX. Collector Cutoff Current: With base open 'ceo 30 0 - 0.1 With base-emitter junction reverse-biased \ A At Te = 200C CEV 30 415 _ 5 rm a * Emitter Cutoff Current leBO -4 - 0.1 mA Coilector-to-Base Breakdown Voltage ViBRICBO 0 0.1 65 - v Coliector-to-Emitter Breakdown Voitage: With base-emitter junction ViBRICEV -1.5 Oto 2008 | 65**| - Vv reverse-biased Emitter-to-Base 0.1 9 4 Breakdown Voitage VIBR)EBO Collector-to-Emitter Sustaining Voltage: e - With base open Vceo (sus) 0 200 40 With external base-to- emitter resistance Voep{susl. 200 40 - (Ree) = 1002 a 1350 3 - 128 10 200 * DC Forward Current h Transfer Retio FE a Collector-to-Emitter - Vv Saturation Voltage Voelsat) 50 250 1 Magnitude of Common- Emitter, Small-Signal, Short-Circuit Forward Ihge! 28 125 a7 | - Current Transfer Ratio 5 (typ.) (f = 100 MH2) * Collector-to-Base Capacitance t= 1 Maal Cop 28 125 - [12 pF * Available Amplifier Signal input Power (Po = 5 W, 2g = 502, Pi - 1.7 w f = 400 MHz) * Collector Circuit Efficiency (Pg = 5 W, ZG = 502, 1c 45 ~ % f = 400 MHz} Base-Spreading Resistance , Measured at 200 MHz "bb 28 250 10 {typ.) 2 Collector-to-Case Capacitance C. - 6 pF Thermal Resistance , Cw (Junction-to-Case) Resc Pulsed through an inductor (25 mH}; duty factor=50% **Measured at a current where the breakdown voltage is a minimum *tn accordance with JEDEC registration data. 88 2N4440 File No. 217 COLLECTOR-TO-EMITTER VOLTS (Voge) =28 CASE TEMPERATURE (T,) = 28C RF POWER INPUT WATTS = Py, 10 2 9 & 8 7s | 6 _ > ~ 5 SS bk 4 > 5 L 3 3 ~~ ao WwW 3 2 2 L a ! 100 2 4 6 @ 1000 OUTPUT FREQUENCY (fouri-MHz 92L$~157IRI Fig. 1Typical power output vs. frequency COLLECTOR SUPPLY VOLTAGE (Vcoc)#28 V CASE TEMPERATURE (T, IMAGINARY PART OF INPUT IMPEDANCE IMPEDANCE & > a 2 u 6 bE a a a at iru a Im(hie) = 25C 3 ~ FREQUENCY (f) MHz 92cs-12572R2 Fig. 3Typical series input reactance vs. frequency COLLECTOR -TO-EMITTER VOLTS (Vcg)2 28 CASE TEMPERATURE (Tc) = 25C COLLECTOR mAI 40 5 6 7 89100 2 3 4 500 FREQUENCY - MHz 92L5-1355 Fig. 5Typical series input resistance vs. fre- quency 89 @ ira 3 re 2 a z < F = 3 = 54 < = DISSIPATIONWATTS ) + CASE TEMPERATURE C B2CS13446 Fig. 2Dissipation derating chart COLLECTOR -TO-EMITTER VOLTS (Vc_) = 28 CASE TEMPERATURE (Te) = 25C COLLECTOR mArIc 25 zop 871 aa NN oe is a ao Ne og So v 255 ETIO aa ES 2 5 40 5 6 7 8B 9100 2 3 4 500 FREQUENCY MHz o2Ls-1386 Fig. 4Typical output capacitance vs. fre- quency COLLECTOR SUPPLY VOLTAGE (vcc)=28 Vv CASE TEMPERATURE (Tc) = 25 C = 600 = A 500) L 9 2 3 400) a x - a 3 3 300 aq oO 1 2 =< oO 200) 5 50 100 150 200 250 300 COLLECTOR CURRENT (Ig )} mA 92CS-IZ2569R2 Fig. 6-Typical gain-bandwidth product vs. collector current 2N4440 File No. 217 COLLECTOR-TO- EMITTER VOLTS (Veg) +28 CASE TEMPERATURE (Tc) = 25C COLLECTOR mA= Ic 500 wi 2 e Do MN El 400 N Nw olg IN Ss 300/209 oo A. oe eS PaaS ft mS a MSS af 200 a te % 100 40.5 6 7 8 9100 2 3 4 500 FREQUENCY ~ MHz 92LS-1357 Fig. 7Typical output resistance vs. fre- quency 92CS-I2566R3 Fig. 8-RF amplifier circuit for power output test at 400 MHz PIN 2N4440 Zg*50 ONMS Pout +ec 926$-+12566R2 Cc, > 2-25 pF Ly: Ferrite choke, Cy, Cz, Cg: 4-40 pF Z = 450 (+ 20%) ohms Cg: 50 pF, disc ceramic L3: 0.47-nH choke Cg: 1500 pF Lg: 2 turns No. 16 wire, C7: 0.005 uF, disc ceramic 3/8 in. (9.52 mm) ID, Ly: 1 turn No. 16 wire, 7/16 in. (11.11 mm) long 1/4 in. (6.35 mm) ID, Ry: 1.35 ohms, non-inductive 1/8 in. (3.17 mm) long Fig. 9-RF amplifier circuit for power output test at 225 MHz 90 File No. 217 DIMENSIONAL OUTLINE JEDEC TO-60 a fp 7 Lt ti SEATING PLANE N 9205-18019 TERMINAL CONNECTIONS Pin No. 1 Emitter Pin No. 2 Base Pin No. 3 Collector 91 INCHES MILLIMETERS symeot| min. | max. | min. | max. | NOTES A 0.215 | 0.320 5.46 8.13 Ay - 0.165 - 4.19 2 ob 0.030 | 0.046 0.762} 1.17 4 D 0.360 | 0.437 9.14 | 11.10 2 oD, | 0.320 | 0360 | 8.13 | 9.14 E | 0.424 | 0.437 | 10.77 | 11.10 e | 0.185 [0215 | 470 | 5.46 e; | 0.090 [0110 | 229 | 279 F | 0.090 | 0.135 | 2.29 | 3.43 1 J | 0.385 | 0.480 | 9.02 | 12.19 om | 0.163 | 0.189 | 4.14 | 4.80 N | 0.375 |0.455 | 953 | 1156 Ny - |oo7e | - 1.98 ow | 0.1658 | 0.1697} 4.212] 4.310| 3,5 NOTES: 1. Dimension does not include sealing flanges 2. Package contour optional within dimensions specified 3. Pitch diameter 10-32 UNF 2A thread (coated) 4, Pin spacing perimts insertion in any socket having a pin-circle diameter of 0.200 in. (5.08 mm) and con- tacts which will accommodate pins with a diameter of 0.030 in. (0.762 mm) min., 0.046 in. (1.17 mm) max. 5. The torque applied to a 10-32 hex nut assembled on the thread during installation should not excead 12 inch- pounds. 2N4440