AY. X04xxxF SENSITIVE GATE SCR FEATURES a IT(RMS) = 4A a Vorm = 400V to 800V a Low Iet < 200UA DESCRIPTION The X04xxxF series of SCRs uses a_ high A performance TOP GLASS PNPN technology. G These parts are intended for general purpose applications where low gate sensitivity is required, T0202-3 like small engine ignition, SMPS_ crowbar (Plastic) protection, food processor. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit (RMS) RMS on-state current Te= 90C 4 A (180 conduction angle) Ta= 25C 1.35 It(Av) Mean on-state current Te= 90C 2.5 A (180 conduction angle) Ta= 25C 0.9 ItTsM Non repetitive surge peak on-state current | tp =8.3 ms 33 A (Jj initial = 25C ) tp=10ms 30 I7t 7t Value for fusing tp=10ms 45 As dl/dt Critical rate of rise of on-state current 50 A/us Ila=10 mA dic /dt = 0.1 A/us. Tstg Storage and operating junction temperature range - 40, + 150 C Tj -40, +125 Tl Maximum lead temperature for soldering during 10s at 260 C 4.5mm from case Voltage ; Symbol Parameter Unit D M N VbRM Repetitive peak off-state voltage 400 600 | 800 Vv VRRM Tj=125C Rex = 1KQ August 1998 Ed:1A 1/4 X04xxxF THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junction to ambient 100 C/W Rth(j-c) | Junction to case for DC 7.5 C/W GATE CHARACTERISTICS Pa ay=0.2 Wmax. Pam=3 W max. (tp = 20 us) lam = 1.2 Amax. (tp = 20 us) Vap = 0.1Vmin. (Vp=Vorm = Ri=3.3kKQ Rek=1KQ = Tj= 125C) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Sensitivity Unit 02 03 05 lat Vp=12V (DC) Ri=14002 Tj= 25C | MIN 20 20 LA MAX | 200 | 200 50 Vet Vp=12V (DC) Ri=14002 Tj= 25C | MAX 0.8 VrRGM IRG =10pnA Tj= 25C | MIN 8 IH It=50mA Rex = 1 KQ Tj= 25C | MAX 5 mA IL Ie=1mA Rex = 1 KO Tj= 25C | MAX 6 mA Vi Itu= 8A tp= 380s Tj= 25C | MAX 1.8 Vv IDRM Vp = Vorm Rex = 1 KO Tj= 25C | MAX 5 pA IRRM Vr = VRRM Tj= 110C | MAX 200 dV/dt Vp=67%VprM Rak = 1 K Tj= 110C | MIN 10 15 15 | Vis ORDERING INFORMATION X 04 03 M FE SCR TOP GLASS a L. PACKAGE : F=T0202-3 CURRENT + SENSITIVITY =~+ VOLTAGE 2/4 4] X04xxxF Fig.1 : Maximum average power dissipation ver- sus average on-state current. P (W) 3 A | x NS QZ = 90 O = Od = 30 Fig.3 : Average on-state current versus case tem- perature. IT(avy(A) 1 0.8 s N > 0.6 = 180 0.4 NN 0.2 _ Tamb (C NO % 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt(Ti] Ih[Tj] Igt[Tj=25C] Ih[Tj=25 C] TICS) 40 -20 0 20 40 60 80 100 120 140 <] Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tcase). P (W) Tease (C) 5 L85 4 \ \ L95 Rth(j-c) 3 N \ -105 2 oe \ L115 a 4 \ Tamb (C) 1 4125 oO 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 0.10 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. sm) 35 TTT Tj initial = 25C 30 25 20 Ly 15 NSN 10 a Number of cycles 1 10 100 1000 3/4 X04xxxF Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of I*t. I pgp (A)- Pt (A?s) Irn (A) 100 100 Tj initial = 25C Tj initial 25C 10 10 Tj max Vto =0.95V Rt =0.1009 Vom) " 10 19 0.5 1 1.5 2 2.5 3 3.5 4 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. Millimeters Inches A! Typ. Max. Typ. Max. A 10.1 0.398 C C 7.3 0.287 v D 10.5 0.413 0 Te ] E 7.4 0.290 Oy IF J F 15 0.059 p BD => H 0.51 0.020 _>} | H J 1.5 0.059 M 45 0.177 PEN N 53 0.209 mF PP Ni | 254 0.100 O 1.4 0.055 P 0.7 0.028 Marking : type number Weight : 1g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responslbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 ky