G E SOLID STATE 01 de fpse7soaa ooizsss a ff 3875081 GE SOLID STATE OTE 17955 D TuH27~l 9 Signal Transistors 2N5365, 2N5366 Silicon Transistors TO-98 This GE/RCA series of economy transistors are planar _ product, and low noise. These characteristics make these epitaxial passivated PNP silicon devices. These units feature units excellent for use in general purpose consumer and low collector saturation voltage, good current gain linearity _ industrial amplifier and switching applications. These types over a wide collector current range, high gain-bandwidth are supplied in JEDEC TO-98 package. Devices in TO-98 package are supplied with and without seating flange (see Dimensional Cutline). MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR TO EMITTER VOLTAGE (Vcgq) - COLLECTOR TO BASE VOLTAGE (Vogo) .--..- eee EMITTER TO BASE VOLTAGE (Vegg)s sss seeeeeee eens GONTINUOUS COLLECTOR CURRENT (ig) oo. cece cece cece t ee een renee cee ee eee t tebe ener een ee eteeetaseseeea COLLECTOR CURRENT (Pulsed) (Iq oe. secs ec cece cence nen e teen e ne tee b nee Pe PEPE SEN see EER C EE ESS EER EGE EEE E EES 700 mA TOTAL POWER DISSIPATION (Ta << 25C)** ccc cence cece tee tebe ene beeen eee there essere ee aetenianas 360 mW TOTAL POWER DISSIPATION (Ta << 55C)** oo ccc n e e t een t eee e tesa beet nee teteseeteeeenaene 260 mW OPERATING TEMPERATURE (Ty). 1... cee ccc cece tence n eet e tenon cent en est eeeenparans .. ~65to + 125C STORAGE TEMPERATURE (Taya) 12... ee cece cece eter erect eeeeeentes . ~65to + 150C LEAD TEMPERATURE, 1/6" + 1/32"(1.58mm 0.8mm) from case at 108 MAX. (TL) oo. cece cece eee ree reece ene een eteeeaneees +260 C * Pulsed conditions: 10s pulse width, <2% duty cycle. ** Derate 3.6mW/C increase in ambient temperatura above 25C. File Number 2066 59 G E SOLID STATE Oo DE J 3875081 OO1795b i J 3875081 G E SOLID STATE CiE 17956 BD i Signal Transistors T 2 9g . 1G 2N5365, 2N5366 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL 2N5365 2N5366 UNITS MIN, TYP. | MAX, MIN. TYP. MAX Collector-Emitter Breakdown Voltage (Ig = 10 mA) Verceo| -40 | - - -40 | - - Vv Collector Cutoff Current (Vcp = 40V) Icpo - - - 100 - - - 100 nA Veg = 40V, Ts = 100C) - - -10 - - -10 uA Cutoff Current(Veg = -4V) __leso - - -10 _ -10 DC Forward Current Transfer Ratio Voge = 10V,ig = -2mA) 32 = - 80 - (Voce = -10,Ig = -50mA)} hee 40 - 120 100 - 300 _ ce = 5V lo = -300mA) 20 - - 40 ~ Smalt-Signal Forward Current Transfer Ratio ; og = ~10V, Io = 2mA, f= 1kHz) Nie 32 - 180 80 - 450 - | Callector-Emitter Saturation Voltage (Ig = -50mA, Ig = ~2.5mA) Vorisan - - -0.25 - ~ -0,25 {Ig = -300mA, Ig = 30mA) Veeisap - _ -1 - - -1 Vv Base-Emitter Voltage Voge = 10V, Io = 2mA) Vee | -0.5 - -0.8 -0.5 - -0.8 Output Capacitance, Common Base (Veg = -0.5, le = 0, f = 1MHz) Cc - - 8 - - 8 pF Input Capacitance, Common Base eg = -0.5Vig = 0,f = 1MHz) Cop - - 35 - _ 35 Gain Bandwidth Product Woe = - 101g = ~2mA) fr - 250 - - 250 - MHz TO-EMITTER VOLTAGE (Vce) = -5V TO-EMITTER VOLTAGE (Vce) = -5 V ~ > o RATIO (hee) ~ o 6.8 8 RATIO thre) on o & i bo au G 9 3 2 < 3 a -E F E 5 z ir] i oc ec ec 5 5 3 a a Q @ $ 5 ac F Q 8 -0.01 -0.1 ~1 -10 -100 1000 -0.01 -0.1 -1 -10 -100 1000 COLLECTOR CURRENT (Ic) mA szce-azsen COLLECTOR CURRENT (Ic) mA nace. Fig. 1Typical de forward current transfer ratio characteristics for Fig. 2Typical de forward-current transfer ratio characteristics for 2N5365. 2N5366. 60 G E SOLID STATE 3875081 GE SOLID STATE o1 DE fp 3475081 oo17957 3 i O1E 17957 DB Signal Transistors r 0.7 Lo tA NORMALIZED DC FORWARD CURRENT TRANSFER RATIO (hee) 0.5 1 0.4 0.3 COLLECTOR-TO-EMITTER VOLTAGE (Vcg) = 5 V 0.25 COLLECTOR CURRENT (Ic) = -50 mA =75 -50 -25 O 265 60 75 100 125 150 AMBIENT TEMPERATURE (Ta) ~ C WiCS-42550 Fig. 3Normalized de forward-current transfer ratio characteristics for both types. icfig = 10 1 ~ oo VOLTAGE (Vce sat) ~ Vv 1 4 1 2 = = 1 = :8 z Q g 2 4 < E = wu r 5 F & wy a 8 -.01 ~ - - ~1000 COLLECTOR CURRENT {Ic} mA WaCS-42552 Fig. 5 Typical collector-to-emitter saturation voltage characteristics for 2N5366, TO-EMITTER VOLTAGE (Vce) = -5 V i = BASE-TO-EMITTER VOLTAGE (Vpe)-V -0.1 71 -10 100 -1000 COLLECTOR CURRENT (Ic)-mA 9208-42554 Fig. 7 Typical base-to-emitter voltage characteristics for 2N5365. 2N5365, 2N5366 T 29-17 Ic/lp = 10 ~0.1 }Ta= 100C = 100 VOLTAGE (Vc sat) V = TEMPERATURE (Ta) = 25 A= 26C COLLECTOR- -0.4 -4 -10 100 COLLECTOR CURRENT (Ig) mA 1000 o2cs-42584 Fig. 4Typical collector-to-emitter saturation voitage characteristics for 2N5365. -1.2|!cAp = 10 VOLTAGE (Vpesat) - V BASE- -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT {Ig) mA - 9205-42553 Fig. 6- Typical base-to-emitter saturation voltage characteristics for both types. 1.1] COLLECTOR-TO-EMITTER VOLTAGE BASE-TO-EMITTER VOLTAGE (Vge)V -0.1 -1 ~10 -100 COLLECTOR CURRENT {ig)- mA 1000 9208-42585 Fig. 8- Typical base-to-emitter voltage characteristics for 2N5366, 61 DE ff 3875081 0017958 i O1E 17958 D G E SOLID STATE 7 Ou 3875081 G E SOLID STATE Signal Transistors 2N5365, 2N5366 AMBIENT TEMPERATURE (Ta) = 25C COLLECTOR CURRENT (c)-mA ra a wn i > COLLECTOR-TO-EMITTER VOLTAGE Woe)-V #208-42586 Fig. 9~ Typical collector current characteristics for 2N5365, COLLECTOR CURRENT tte) -maA T2979 AMBIENT TEMPERATURE Ta} = 26C COLLECTOR-TO-EMITTER VOLTAGE og) -V face-azssr Fig. 10 Typical collector current characteristics for 2N5366. CUTOFF nA 1 3 iS) Sebo) I o ! * Ys 2a oe rs ou eo or wo 49 6 o } a INPUT (Cobo) AND OUTPUT ( CAPACITANCE pF COLLECTOR-TO-BASE VOLTAGE (Vcg)=40V 1 AMBIENT TEMPERATURE {Ta}-C -0.1 -1 -10 -100 COLLECTOR-TO-BASE VOLTAGE (Vog) V EMITTER-TO-BASE VOLTAGE (Veg) V f2cs-a2ss Fig. 11~-Typical collector-to-base cutoff current characteristics for both types. s2C3-42559 Fig. 12Typical input and oulput capacitance characteristics for both types, GAIN-BANDWIDTH PRODUCT PRODUCT VOLTAGE (VcE) -V + =0.01 0.1 -10 -100 -1 COLLECTOR CURRENT (ic)mA 0.01 0.1 -1 10 COLLECTOR CURRENT {(lc]~mA -100 $205-42561 s2cs-47560 Fig. 13Typical gain-bandwicth Product characteristics for 2N5365. Fig. 14 Typical gain-bandwidth Product characteristics for 2N5366. 62 G E SOLID STATE 01 pe )3a7soaa oo1zass ? ff Ww 2 E 2 a ws c uw < 3 3 a Signal Transistors 2N5365, 2N5366 T2919 a o 2 9 0.4 a 0.001 -0.01 -0.1 -1 -10 100 -0.001 -0.01 "0.1 a 10 =100 COLLECTOR CURRENT (ic}mA sace-4a5t2 COLLECTOR CURRENT (Ic})mA eecea29 Fig. 15 Typical noise figure characteristics for 2N5365. Fig. 16Typical noise figure characteristics for 2N5366. TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base