TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per M I L-PR F - 19 5 00/162
• Glass Passivated Die • Glass to Metal Seal Construction
• VRRM 200 to 1000 Volts
T4-LDS-0139 Rev. 1 (091749) Page 1 of 3
DEVICES LEVELS
1N1614 1N4458 1N1614R 1N4458R JAN
1N1615 1N4459 1N1615R 1N4459R JANTX
1N1616 1N1616R
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Peak Repetitive Reverse Voltage
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
VRWM
200
400
600
800
1000
V
Average Forward Current, TC = 150° IF 15 A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C IFSM 100 A
Thermal Resistance, Junction to Case RθJC 4.5 °C/W
Operating Case Temperature Range Tj -65°C to 175°C °C
Storage Temperature Range TSTG -65°C to 175°C °C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unle ss othe rwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Voltage
IFM = 15A, TC = 25°C* VFM 1.5 V
Reverse Current
VRM = 200, TC = 25°C
VRM = 400, TC = 25°C
VRM = 600, TC = 25°C
VRM = 800, TC = 25°C
VRM = 1000, TC = 25°C
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
IRM 50
μA
Reverse Current
VRM = 200, TC = 150°C
VRM = 400, TC = 150°C
VRM = 600, TC = 150°C
VRM = 800, TC = 150°C
VRM = 1000, TC = 150°C
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
IRM 500
μA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
DO-203AA (DO-4)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0139 Rev. 1 (091749) Page 2 of 3
GRAPHS
FIGURE 3
FORWARD CURRENT DERATING
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 4
TRANSIENT THERMAL IMPEDANCE
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
T4-LDS-0139 Rev. 1 (091749) Page 3 of 3
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
CD .250 6.35 9
CD1 .424 10.77
CH .405 10.29
G .060 1.52
HF .424 .437 10.77 11.10
HT .075 .175 1.91 4.45
OAH .800 20.32
SP
6,7,8
SL .422 .453 10.72 11.51
T .060 1.52
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information
only.
3. Angular orientation of this terminal is undefined.
4. Diameter of unthreaded portion .189 inch (4.80 mm)
maximum; .163 inch (4.14 mm) mi nimum.
5. The A.S.A. thread reference is 10-32UNF2A (unplated).
6. The maximum diameter of plated threads shall be basic
pitch diam et er .169 inc h (4 .2 9 mm).
7. Unit shall not be damaged by torque of 15 inch-pound
applied to 10-32NF2B nut assembled on thread.
8. Complete threads shall extend to within 2.5 threads of the
seating plane.
9. Terminal end shape is unrestricted.
10. In accordance with ASME Y14.5M, diameters are
equivalent to φx symbology.
Physical dimensions
