Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
The devices may also be used for unidirectional ESD protection of up to two signal lines.
1.2 Features
1.3 Applications
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEDEC
PESD5V0X1BQ SOT663 - ultra small and flat lead
PESD5V0X1BT SOT23 TO-236AB very small
nBidirectional ESD protection of one line nESD protection up to 9 kV
nUnidirectional ESD protection of up to
two lines
nIEC 61000-4-2; level 4 (ESD)
nUltra low diode capacitance: Cd= 0.9 pF nAEC-Q101 qualified
nVery low leakage current: IRM =1nA
nUSB interfaces nSubscriber Identity Module (SIM) card
protection
nAntenna protection nComputers, peripherals and printers
nRadio Frequency (RF) protection nCellular handsets and accessories
n10/100/1000 Mbit/s Ethernet nPortable electronics
nFireWire nCommunication systems
nAsymmetric Digital Subscriber Line
(ADSL)
nAudio and video equipment
nHigh-speed data lines
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 2 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data
[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
3. Ordering information
Table 2. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage - - 5 V
Cddiode capacitance f = 1 MHz; VR=0V [1] - 0.9 1.3 pF
[2] - 2 2.6 pF
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PESD5V0X1BQ
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
PESD5V0X1BT
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
12
3
006aaa154
12
3
12
3
006aaa154
12
3
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0X1BQ - plastic surface-mounted package; 3 leads SOT663
PESD5V0X1BT - plastic surface-mounted package; 3 leads SOT23
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 3 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
Table 5. Marking codes
Type number Marking code[1]
PESD5V0X1BQ E6
PESD5V0X1BT U3*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1] -9kV
MIL-STD-883 (human
body model) -10kV
Table 8. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 4 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
6. Characteristics
[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
Fig 1. ESD pulse waveform according to IEC 61000-4-2
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff
voltage --5V
IRM reverse leakage current VRWM = 5 V - 1 100 nA
VBR breakdown voltage IR= 5 mA 5.8 7.5 9.5 V
Cddiode capacitance f=1MHz
VR=0V [1] - 0.9 1.3 pF
[2] - 2 2.6 pF
VR=5V [1] - 0.8 1.2 pF
[2] - 1.7 2.3 pF
rdif differential resistance IR= 1 mA - - 100 Ω
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 5 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
bidirectional configuration
f = 1 MHz; Tamb =25°Cunidirectional configuration
f = 1 MHz; Tamb =25°C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. V-I characteristics for a bidirectional
ESD protection diode Fig 5. V-I characteristics for a unidirectional
ESD protection diode
VR (V)
054231
006aab249
0.88
0.92
0.84
0.96
1.0
Cd
(pF)
0.80
VR (V)
054231
006aab348
1.8
1.7
1.9
2.0
Cd
(pF)
1.6
006aaa676
−VCL −VBR −VRWM VCL
VBR
VRWM
−IRM
IRM
−IR
IR
−IPP
IPP
−+
006aaa407
−VCL −VBR −VRWM −IRM
−IR
−IPP
V
I
P-N
−+
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 6 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Fig 6. ESD clamping test setup and waveforms
006aab336
50 Ω
RZ
CZ
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div vertical scale = 20 V/div
horizontal scale = 100 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 7 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional
data or signal line from the damage caused by ESD. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two
unidirectional data or signal lines, which have positive signal polarities with respect to
ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
Fig 7. Application diagram
006aab252
bidirectional protection
of one line
DUT
line 1 to be protected
GND
DUT
line 1 to be protected
unidirectional protection
of two lines
line 2 to be protected
GND
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 8 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 8. Package outline PESD5V0X1BQ (SOT663) Fig 9. Package outline
PESD5V0X1BT (SOT23/TO-236AB)
Dimensions in mm 02-05-21
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.33
0.23
0.5
12
3
0.6
0.5
0.3
0.1
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
PESD5V0X1BQ SOT663 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - -
PESD5V0X1BT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 9 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 10. Reflow soldering footprint PESD5V0X1BQ (SOT663)
Fig 11. Reflow soldering footprint PESD5V0X1BT (SOT23/TO-236AB)
solder lands
placement area
occupied area
solder paste
sot663_fr
2.45
1.6
20.8
0.5
(3×)
0.5
(3×)
0.55
(3×)
0.55
(3×)
1.9
0.6
(3×)
1.65
1
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 10 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Fig 12. Wave soldering footprint PESD5V0X1BT (SOT23/TO-236AB)
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 11 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0X1BQ_PESD5V0X1BT_1 20081030 Product data sheet - -
PESD5V0X1BQ_PESD5V0X1BT_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 12 of 13
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 October 2008
Document identifier: PESD5V0X1BQ_PESD5V0X1BT_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
