STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1 - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STP7NC70Z/FP 700V < 1.38 6A STB7NC70Z/-1 700V < 1.38 6A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 1 D 2PAK 3 1 TO-220 2 TO-220FP 12 2 3 I PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)7NC70Z(-1) VDS VDGR VGS Unit STP7NC70ZFP Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 k) 700 V Gate- source Voltage 25 V ID Drain Current (continuous) at TC = 25C 6 6(*) ID Drain Current (continuous) at TC = 100C 3.7 3.7(*) A Drain Current (pulsed) 24 24 A Total Dissipation at TC = 25C 125 40 W 0.32 W/C IDM (1) PTOT Derating Factor IGS 1 50 mA Gate source ESD(HBM-C=100pF, R=15K) 3 KV dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature VESD(G-S) Tj Gate-source Current A Max. Operating Junction Temperature (*)Pulse width limited by safe operating area May 2003 -- 2000 V -65 to 150 C 150 C (1)ISD 6A, di/dt 100A/s, V DD V(BR)DSS , Tj TJMAX (2).Limited only by maximum temperature allowed 1/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 THERMAL DATA TO-220 / D2PAK / TO-220FP I2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W Maximum Lead Temperature For Soldering Purpose 300 C Tl 1 3.13 C/W AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value Unit 6 A 238 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Test Conditions ID = 250 A, VGS = 0 Min. Typ. Max. 700 ID = 1 mA, VGS = 0 Unit V 0.8 V/C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 A VDS = Max Rating, TC = 125 C 50 A Gate-body Leakage Current (VDS = 0) VGS = 20V 10 A ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A Min. Typ. Max. Unit 3 4 5 V 1.1 1.38 Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/13 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 7 S 1840 pF Ciss Input Capacitance Coss Output Capacitance 140 pF Crss Reverse Transfer Capacitance 18 pF STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 350 V, ID = 3.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) 24 ns 8 ns VDD = 560V, ID = 7A, VGS = 10V 47 66 nC 11 nC 19 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 560V, ID = 7 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 11 ns 10 ns 19 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.6 V ISD = 7A, di/dt = 100A/s, VDD = 50V, Tj = 150C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. 575 ns 5.8 C 20 A GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs= 1mA (Open Drain) T Voltage Thermal Coefficient T=25C Note(3) 1.3 10-4/C Rz Dynamic Resistance ID = 50 mA, VGS = 0 90 BVGSO V Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. VBV = T (25-T) BVGSO(25) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 Source-drain Diode Forward Characteristics 6/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 TO-220 MECHANICAL DATA DIM. 8/13 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 oP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 10/13 TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D A2 A C C2 DET AIL "A" DET AIL "A" A1 B2 E B G L2 L L3 P011P6/E 11/13 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/13 0.933 0.956 inch MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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