VS-15TQ060S-M3
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Revision: 27-Oct-17 1Document Number: 94927
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High Performance Schottky Rectifier, 15 A
FEATURES
150 °C TJ operation
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
Designed and qualified according to JEDEC®-JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-15TQ060S-M3 Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 15 A
VR60 V
VF at IF 0.56 V
IRM max. 45 mA at 125 °C
TJ max. 150 °C
EAS 6 mJ
Package D2PAK (TO-263AB)
Circuit configuration Single
Anode
13
Base
cathode
2
N/C
D2PAK (TO-263AB)
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 15 A
VRRM 60 V
IFSM tp = 5 μs sine 1000 A
VF15 Apk, TJ = 125 °C 0.56 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-15TQ060S-M3 UNITS
Maximum DC reverse voltage VR60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform 15 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
1000
A
10 ms sine or 6 ms rect. pulse 260
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH 6 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.50 A
VS-15TQ060S-M3
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Revision: 27-Oct-17 2Document Number: 94927
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
15 A TJ = 25 °C 0.62
V
30 A 0.82
15 A TJ = 125 °C 0.56
30 A 0.71
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.80 mA
TJ = 125 °C 45
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 720 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 3.25
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK (TO-263AB) 15TQ060S
1
10
100
IF - Instantaneous Forward
Current (A)
VFM - Forward Voltage Drop (V)
0 0.4 0.8 1.2 1.6 2.0
1000
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
01020
30 60
0.01
0.1
1
10
100
50
0.001
40
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
1000
VS-15TQ060S-M3
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Revision: 27-Oct-17 3Document Number: 94927
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
02030
40 50
100
1000
10
TJ = 25 °C
60
ZthJC - Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
02510
80
90
110
130
150
51520
120
140
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
DC
100
0
4
10
14
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0822
12
6
2
642 10
8
12 14 16 18 20
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
VS-15TQ060S-M3
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Revision: 27-Oct-17 4Document Number: 94927
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Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
ORDERING INFORMATION TABLE
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100
1000
10 100 1000 10 000
At any rated load condition
and with rated V applied
following surge RRM
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
2- Current rating (15 A)
3- Circuit configuration: T = TO-220
4- Schottky “Q” series
5- Voltage rating (060 = 60 V)
- S = D2PAK (TO-263AB)
6
7- None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8
VS- 15 T Q 060 S TRL -M3
- -M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
VS-15TQ060S-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 5Document Number: 94927
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-15TQ060S-M3 50 1000 Antistatic plastic tubes
VS-15TQ060STRR-M3 800 800 13" diameter reel
VS-15TQ060STRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424
SPICE model www.vishay.com/doc?95600
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 13-Jul-17 1Document Number: 96164
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC® outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
(3)
(3)
View A - A
(E)
(D1)
E1
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Revision: 01-Jan-2019 1Document Number: 91000
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