VS-15TQ060S-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 1Document Number: 94927
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High Performance Schottky Rectifier, 15 A
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-15TQ060S-M3 Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 15 A
VR60 V
VF at IF 0.56 V
IRM max. 45 mA at 125 °C
TJ max. 150 °C
EAS 6 mJ
Package D2PAK (TO-263AB)
Circuit configuration Single
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 15 A
VRRM 60 V
IFSM tp = 5 μs sine 1000 A
VF15 Apk, TJ = 125 °C 0.56 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-15TQ060S-M3 UNITS
Maximum DC reverse voltage VR60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform 15 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
1000
A
10 ms sine or 6 ms rect. pulse 260
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH 6 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.50 A